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Paper des Monats
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The European laser safety standards EN 207, EN 208, and EN 12254 each contain an annex B, which serves as a guidance for the selection of products. These annexes are informative only and are therefore not binding. As there are a variety of hazard scenarios, it is not recommended to change these annexes to a normative status, through which they would become mandatory. Instead, it is recommended to allow users to apply their own skills and know-how in selecting appropriate products, justifying where and why they deviate from the guidance in the standards. This paper explains the background on which the guidance for selection in the annexes of the standards is based and shows physically meaningful leeway.
Die Laserbearbeitung von Materialien mit ultrakurzen Laserpulsen kann zu einer sekundären Emission gefährlicher Röntgenstrahlen führen. Dieser Effekt wurde bisher bei der Bearbeitung von technischen Materialien wie Metallen beobachtet. Die Röntgenemission bei der abtragenden Bearbeitung von biologischen Geweben ist noch weitgehend unerforscht. Der Vortrag präsentiert erste Untersuchungen und Ergebnisse des radiologischen Gefährdungspotentials bei der medizinischen Anwendung von Ultrakurzpulslasern am Menschen.
The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and ~4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delay-dependent decrease of the low spatial frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination is quantified individually.
The formation of near-wavelength laser-induced periodic surface structures (LIPSS) on silicon upon irradiation with sequences of Ti:sapphire femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied theoretically. For this purpose, the nonlinear generation of conduction band electrons in silicon and their relaxation is numerically calculated using a two-temperature model approach including intrapulse changes of optical properties, transport, diffusion and recombination effects. Following the idea that surface plasmon polaritons (SPP) can be excited when the material turns from semiconducting to metallic state, the 'SPP active area' is calculated as function of fluence and double-pulse delay up to several picoseconds and compared to the experimentally observed rippled surface areas. Evidence is presented that multi-photon absorption explains the large increase of the rippled area for temporally overlapping pulses. For longer double-pulse delays, relevant relaxation processes are identified. The results demonstrate that femtosecond LIPSS on silicon are caused by the excitation of SPP and can be controlled by temporal pulse shaping.
Review of x-ray exposure and safety issues arising from ultra-short pulse laser material processing
(2021)
Laser processing with ultra-short laser pulses enables machining of materials
with high accuracy and throughput. The development of novel laser Technologies with laser pulse repetition rates up to the MHz range opened the way for industrial manufacturing processes. From a radiological point of view this evolution is important, because x-ray radiation can be generated as an unwanted side effect in laser material processing. Even if the emitted x-ray dose per pulse is comparably low, the x-ray dose can become hazardous to health at high laser repetition rates. Therefore, radiation protection must be considered. This article provides an overview on the generation and detection of x-rays in laser material processing, as well as on the handling of this radiation risk in the framework of radiological protection.