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- Doping (2)
- Laser processing (2)
- Paper (2)
- Selective emitter (2)
- Ablation (1)
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- Damage threshold (1)
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- Dielectrics (1)
- Femtosecond laser (1)
- Femtosecond laser ablation (1)
- Laser cleaning (1)
- Laser impact on surfaces (1)
- Laser-induced periodic surface structures (LIPSS) (1)
- Multicrystalline silicon (1)
- Nanosecond laser (1)
- Nanosecond laser cleaning (1)
- Second harmonic generation (SHG) (1)
- Semiconductors (1)
- Silicon (1)
- Silicon solar cell (1)
- Simulation (1)
- Surface plasmon polaritons (1)
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of semiconductors and dielectrics by linearly polarized high-intensity Ti:sapphire fs-laser pulses (τ ~100 fs, λ ~800 nm) is studied experimentally and theoretically. In the experiments, two different types of LIPSS exhibiting very different spatial periods are observed (socalled LSFL low spatial frequency LIPSS, and HSFL - high spatial frequency LIPSS), both having a different dependence on the incident laser fluence and pulse number per spot. The experimental results are analyzed by means of a new theoretical approach, which combines the generally accepted LIPSS theory of J. E. Sipe and co-workers [Phys. Rev. B 27, 1141-1154 (1983)] with a Drude model, in order to account for transient changes of the optical properties of the irradiated materials. The joint Sipe-Drude model is capable of explaining numerous aspects of fs-LIPSS formation, i.e., the orientation of the LIPSS, their fluence dependence as well as their spatial periods. The latter aspect is specifically demonstrated for silicon crystals, which show experimental LSFL periods Λ somewhat smaller than λ. This behaviour is caused by the excitation of surface plasmon polaritons, SPP, (once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material) and the subsequent interference between its electrical fields with that of the incident laser beam, resulting in a spatially modulated energy deposition at the surface.
Upon multi-pulse irradiation, a feedback mechanism, caused by the redshift of the resonance in a grating-assisted SPP excitation, is further reducing the LSFL spatial periods. The SPP-based mechanism of LSFL successfully explains the remarkably large range of LSFL periods between ~0.6 λ and λ.
The influence of paper type and state of degradation on laser cleaning of artificially soiled paper
(2011)
Lasers can be a supplemental tool for restorers to overcome some of the limitations of traditional dry cleaning techniques for works of art on paper. The laser working range has to be optimized allowing for safe removal of contamination and limitation of damage to the substrate. This paper addresses the influence of paper type and state of degradation on laser working range. Three types of new paper (pure cellulose, bleached pulp paper, rag paper) were degraded and characterized with respect their degree of polymerization. Laser-induced damage thresholds of new and degraded paper were determined using SEM and viscometry. Additionally, artificially soiled model samples were made using two kinds of soiling, namely pulverized charcoal and soot-blackened standard test dust. Cleaning thresholds of soiled paper samples were evaluated. A working range for all combinations of paper and soiling between 0.05 J/cm2 and 0.5 J/cm2 was found for the application of 8-ns laser pulses at 532 nm wavelength.
Paper is one of the most important materials representing and witnessing human culture particularly as a carrier medium for text and image. As soiling hampers the reception of information, paper cleaning techniques are needed. Traditional mechanical and chemical cleaning methods are used by conservator-restorers. In some cases, a classical cleaning procedure of paper objects yields unsatisfactory results or a conventional treatment is even impossible. Especially, fragile paper objects cause problems due to mechanical instabilities. Laser cleaning as a non-contact method might be a way to overcome some of the limitations of classical cleaning techniques. Laser parameters have to be chosen to achieve removal of the soiling without influencing the artwork. Any immediate as well as long-term effects causing an irreversible change of the artwork have to be avoided. At present, most laser applications are found in stone and metal conservation, while laser treatment of complex organic materials like paper is still not fully developed for application in conservators' workshops. This contribution describes recent work of pulsed laser cleaning of soiled model samples. Pure cellulose, rag paper and wood-pulp paper were mechanically soiled with pulverized charcoal in a standardized procedure to make model samples representing essential characteristics of contaminated real-world artworks. Afterwards, model samples were cleaned using short and ultrashort laser pulses in the nanosecond and femtosecond time domain, respectively. An extensive analysis of the model samples after laser treatment using an optical microscope and a multi-spectral imaging system allows a comparison of the cleaning results obtained with both laser sources.