Filtern
Erscheinungsjahr
Dokumenttyp
- Zeitschriftenartikel (70) (entfernen)
Schlagworte
- Laser ablation (8)
- Femtosecond laser ablation (5)
- Laser (5)
- Ablation (3)
- Aluminium (3)
- Gold (3)
- Silicon (3)
- Threshold (3)
- Activated ester (2)
- Conducting polyalkylthiophene (2)
A complementary study of composition and bonding of sputtered a-C films, deposited on Si(001) substrates with various bias voltages (Vb) applied to the substrate during deposition is presented. The sp3 and sp2 fractions in the films were calculated by deconvolution of the X-ray photoelectron spectroscopy (XPS) C1s peak and studied by the differential auger electron spectroscopy (AES) CKLL peak signal. The results of this analysis are compared with the estimation of sp3 fraction calculated by spectroscopic ellipsometry (SE) and validated using density measurements by X-ray reflectivity. It was observed a considerable increase of sp3 content in films deposited with negative Vb. The respective sp3 and sp2 fractions and Ar concentration with respect to the Vb and the depth profile analysis give valuable information on the deposition mechanism of the sputtered a-C films. XPS valence band spectra provided the electron density of states in the a-C films valence band. The characteristic broad p band of diamond was prominent in most of the films. The valence band structure of the films was correlated with their optical response measured by SE.
A study on the bonding structure and mechanical properties of magnetron sputtered CNx thin films
(2001)
Carbon nitride (CNx) films have been deposited by reactive (RF) magnetron sputtering, in order to investigate the effect of the energetic ion bombardment during deposition (IBD), in terms of applied Vb, on their bonding structure. Fourier Transform IR Ellipsometry (FTIRE) and X-ray photoelectron spectroscopy (XPS) were used for the investigation of the films bonding structure, while their mechanical properties were evaluated by nanoindentation measurements. At films grown with low negative Vb, (low energy IBD) the N atoms are distributed homogeneously in substitutional sites in graphitic rings through both sp2 and sp3 bonds and in linear chains, through sp2 bonds. In contrast, the high negative Vb (high energy IBD) has been suggested to promote the non-homogeneous N distribution at localized regions in the films where the formation of sp3 C---N bonds is favored. This behavior was also evidenced by the C1s and N1s XPS peak components, assigned to the sp3 and sp2 carbonnitrogen bonds. Also, high energy IBD films revealed increased values of hardness and elasticity, while hardness values up to 45 GPa were measured at localized regions.
Zusammenfassung
The surface chemical modification of polyurethane (PU) films was performed by an UV laser-induced chemical reaction in a polysaccharide solution. This process may be applicable as hydrophilic packaging of implantable medical devices and in vivo sensors. When a PU film in contact with an aqueous alginic acid (AAC) solution was irradiated with a XeCl laser, the PU film turned hydrophilic. Contact angles of water on the film were reduced from 110° to 60°. Since light absorption of the AAC solution at 308 nm was negligibly small, reactive sites were generated solely on the PU surface. There, AAC could be immobilized by chemical bonds thus allowing for a nanometer-scaled grafting of this biomolecule. The mechanism was investigated by surface analyses with Fourier-transform infrared spectroscopy (FT-IR), dye staining, ultraviolet-visible (UV-VIS) spectroscopy, and scanning electron microscopy (SEM) techniques. A one-photon photochemical process could beidentified.
The interaction of nanosecond laser pulses in the ultraviolet wavelength range and femtosecond laser pulses in the near-infrared region with the semiconductor SiC and the composite compound SiCTiCTiB2 was investigated. Surface analytical techniques, such as XPS, depth profile (DP), and micro-Raman spectroscopy (?-RS) were used to identify the chemical changes between untreated and laser-treated areas. Single-pulse irradiation led to material modifications in the condensed state in most instances. Multi-pulse results differed depending on the pulse duration. Crystal structure changes were observed as a consequence of laser-induced melting and resolidification. In air contact all components underwent oxidation reactions according to thermodynamic expectations. Exceptions were observed under exclusion of oxygen, SiC was reduced to elemental Si.
The mechanism of the recrystallization of nano-scale bacterial surface protein layers (S-layers) on solid substrates is of fundamental interest in the understanding and engineering of biomembranes and e.g. biosensors. In this context, the influence of the charging state of the substrate had to be clarified. Therefore, the electrochemical behaviour of the S-layers on gold electrodes has been investigated by in-situ electrochemical quartz microbalance (EQMB) measurements, scanning force microscopy (SFM) and small-spot X-ray photoelectron spectroscopy (SS-XPS) of potentiostatically emersed substrates. It was shown that the negatively charged bonding sites of the S-layer units (e.g. carboxylates) can bond with positively charged Au surface atoms in the positively charged electrochemical double layer region positive of the point of zero charge (not, vert, similar-0.8 V vs. saturated mercury-mercurous sulphate electrode). Surface conditions in other potential regions decelerated the recrystallization and fixation of S-layers. Time-resolved in-situ and ex-situ measurements demonstrated that two-dimensional S-layer crystal formation on gold electrodes can occur within few minutes in contrast to hours common in self-assembled monolayer (SAM) generation. These results proved that the recrystallization and fixation of 2D-crystalline S-layers on an electronic conductor can be influenced and controlled by direct electrochemical manipulation.
Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer.
Ablation experiments with ultrashort laser pulses (pulse duration 150 fs, wavelength 800 nm) on polymers (PC, PMMA) relevant for biomedical technology have been performed in air. The lateral and vertical machining precision was evaluated by optical, atomic force and scanning electron microscopy. The ablation threshold reaches values in the range of 0.52.5 J/cm2 and depends significantly on the number of laser pulses applied to the same spot. The hole diameters are influenced by the laser fluence and the number of laser pulses. The relation between the ablation threshold and the number of laser pulses applied to the same spot is described in accordance with an incubation model.