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Clear evidence of the effects caused by hydrogen, introduced in different forms in an analytical glow discharge source (GDS) operated with argon, is presented for the different matrix elements copper, stainless steel, titanium, aluminium and silicon. When hydrogen is present even in small quantities in argon, not only are there significant changes in the emission line intensities of most elements (analyte and plasma species), but also new spectral features, such as emission bands of new compounds (hydrides of sputtered sample constituents) and a continuous background in the range ~220440 nm. Moreover, the discharge current (the dependent parameter in our experiments) decreases with increasing hydrogen concentration. Different modes of hydrogen introduction, externally in gaseous form or sputtered as a sample constituent, cause very similar effects in terms of discharge current, line intensity (of analyte and plasma gas) and emission continua, which implies similar changes in the discharge processes in the two cases. The excitation of the hydrogen continuum appears to quench the population of the argon metastables (11.55 and 11.72 eV) and, consequently, other elementary processes in the plasma in which the argon metastables take part, but to a different extent for each analyte.
The influence of hydrogen contained in a sample or otherwise introduced into a glow discharge source (GDS) is here extensively experimentally presented for the case of copper as a sample by means of the addition of small quantities of molecular hydrogen (<1% relative partial pressure) to the argon carrier gas. The progressive addition of molecular hydrogen causes different intensity changes particular to the individual lines of different species such as atomic (Cu I) and ionic (Cu II) copper, and also atomic (Ar I) and ionic (Ar II) argon. Some interesting features of the emission spectrum of hydrogen such as its line, band and even continuum spectrum are observed. It was also found that the depth resolution becomes worse even at very low concentrations of hydrogen.
Glow discharge optical emission spectroscopy (GD-OES) is briefly reviewed, with particular reference to topics relevant to the application field of near surface and thin film analysis. The special needs and requirements for thin film analysis, in contrast to coating and bulk analysis, are pointed out. A task list is developed which shows the requirements of further developments to the technique and the fundamentals. The state-of-the-art is presented in measurement technique, GD source control and design, the effect of traces of molecular gases, correction and quantification procedures, contributions of modelling and, finally, reference materials for thin film analysis.
The analysis of thin layers of thickness 100 nm has become a new field of application for glow discharge optical emission spectroscopy (GDOES). In this paper an overview is given of the experiences and possibilities gained by the authors in later years at their research, development and application of GDOES.
During GDOES analysis of a multilayer system the depth resolution was determined using the inverse maximal slope method. Under optimized discharge conditions a depth resolution of 25 nm at 100 nm depth was achieved. The gas flow in a Grimm-type source for glow discharge mass spectrometry (GDMS) was simulated and a correlation between calculated pressure and crater shape was found. Cleanness of the sample and source turned out to be essential for a fast stabilization time and reduction of the influence of light elements and molecules. Thereby, a 10 nm layer at the top surface of a sample could be quantified. Apart from the influence of density, the reflectivity of the sample surface is discussed. It is shown that a high sample reflectivity can cause up to 100% more light to be measured by the spectrometer.
The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 µm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits.