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Electron probe microanalysis (EPMA)is a non-destructive technique which assumes a sample of homogenous (bulk) chemical composition and can, therefore, not be used for thin film samples. However, in combination with one of the possible thin film software packages, STRATAGEM, the thickness as well as the composition of such films on a substrate can be determined.
This has been demonstrated for FeNi on Si and SiGe on Al2O3 film systems. For both systems five samples with different elemental composition and a reference were produced and characterised by the Korean research institute KRISS using inductively coupled plasma mass spectrometry (ICP-MS), Rutherford backscattering (RBS), and transmission electron microscopy (TEM).
In 2021, a new and open source thin film evaluation programme called BADGERFILM has been released. It can also be used to determine thin film composition and thickness from intensity ratios of the unknown sample and standards (k-ratios).
In this contribution, we re-evaluated the data acquired for the FeNi and SiGe systems using the BADGERFILM software package and compared the resulting composition and thickness with the results of the established STRATAGEM software and other reference methods. With the current evaluation, the BADGERFILM software shows good agreement with the composition and thickness calculated by STRATAGEM and provided by the KRISS.
These results between two well-known layered material systems analysed with available conventional EMPA approaches (STRATAGEM and direct thickness measurement by TEM) and a new one (BADGERFILM) proves that reliable non-destructive thin film analysis is possible. In this way, we validate the performance of the new software, which is not at all self-explanatory for such
complex quantification algorithms lying behind the final quantified results.
microscopy (AFM), or X-ray reflectometry. For the additional determination of thin film composition, techniques like X-ray photoelectron spectroscopy (XPS) or mass spectrometry-based techniques can be used. An alternative non-destructive technique is electron probe microanalysis (EPMA). This method assumes a sample of homogenous (bulk) chemical composition, so that it cannot be usually applied to thin film samples. However, in combination with the thin film software StrataGEM, the thickness as well as the composition of such films on a substrate can be determined.
This has been demonstrated for FeNi on Si and SiGe on Al2O3 film systems. For both systems five samples with different elemental composition and a reference were produced and characterised by Korean research institute KRISS using inductively coupled plasma mass spectrometry (ICP-MS), Rutherford backscattering (RBS), and transmission electron microscopy (TEM). These samples were used for an international round robin test.
In 2021, a new and open-source thin film evaluation programme called BadgerFilm has been released. It can also be used to determine thin film composition and thickness from intensity ratios of the unknown sample and standards (k-ratios).
In this contribution, we re-evaluated the data acquired for the FeNi and SiGe systems using the BadgerFilm software package and compared the resulting composition and thickness with the results of the established StrataGEM software and other reference methods. With the current evaluation, the BadgerFilm software shows good agreement with the composition and thickness calculated by StrataGEM and as the reference values provided by the KRISS.
Electron Probe Microanalysis (EPMA) provides a non-destructive approach in the dedicated thin film analysis mode with the commercial StrataGem software. Recently, the open-source programme BadgerFilm by Moy and Fournelle became available. Similarly to StrataGem, it is based on the algorithm of Pouchou and Pichoir and needs intensity ratios of the unknown sample and standards (k-values). We have evaluated the k-values measured for the FeNi and SiGe film systems using the BadgerFilm software package and compared the thickness and composition with the results obtained with the established StrataGem software and other reference methods. The thicknesses of the SiGe films obtained by the BadgerFilm software agree within 20% with the StrataGem and TEM results; the elemental compositions BadgerFilm-StrataGEM agree within 2% with one exception (9%).
Porous materials play an important role in several fields of technology, especially for energy applications like photovoltaics, electrolysis or batteries. The activity of porous films is affected by properties like porosity, film thickness, chemical composition of the material, as well as the crystallinity of the framework. The complex morphology of such porous films constitutes a challenge even for modern analytical techniques and requires new approaches employing the combination/complementation of data of different analytical methods. In this contribution, we characterise thin mesoporous iridium-titanium mixed oxide film properties by electron probe microanalysis (EPMA) with energy-dispersive X-ray spectroscopy (EDS) at an SEM.
Mesoporous iridium oxide - titanium oxide (IrOx-TiOx) films were prepared via dip-coating of a solution containing a triblock-copolymer as structure-directing agent, an iridium precursor as well as a titanium precursor in ethanol. IrOx-TiOx films were synthesized with different amounts of iridium and calcined in air. The SEM micrographs reveal for all films the achievement of a well-ordered mesoporous structure and homogeneous films with thicknesses between 67 nm and 152 nm.
For the determination of film elemental composition and porosity, EPMA can be used as part of a combined SEM/EDS/STRATAGem analysis. Elemental compositions and mass depositions (in μg cm-2) of IrOx-TiOx films were calculated with the thin film analysis Software STRATAGem via k-values measured with SEM/EDS. Pure bulk Ir, TiO2 and Si were measured as references. The average density of the films was obtained from the mass Deposition and the film thickness as measured by cross-section SEM. The porosity was then extracted from the measured average film density divided by a theoretical bulk density. The latter is calculated from the weight fractions of IrOx and TiOx as determined with STRATAGem and the bulk mass densities of IrO2 and TiO2 (rutil) from literature.
The fitting results of the k-values from the STRATAGem software, which are in fair agreement with the measured k-values.
The application of the SEM/EDS/STRATAGem approach for accurate porosity determination on pure mesoporous TiOx films and pure porous IrOx films has been recently demonstrated.
The porosities of pure IrOx, TiOx and mixed IrOx-TiOx films in this study have been determined. The contribution will assess in detail the advantages and limitations of the combined SEM/EDS/STRATAGem analysis for the morphology and porosity of thin metal oxide films. Moreover, the comparison with other measurement techniques and the combination of datasets from multiple measurements will be discussed.
The present study reports on measurements on thin Fe-Ni films on silicon and first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide Substrate by electron probe microanalysis (EPMA). Standard-based and standardless EPMA (with EDS) results were used in combination with the thin film analysis software Stratagem for the quantification.
Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results.
Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode.
Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. An excellent agreement has been obtained between the atomic fractions determined by EPMA and µ-XRF with the KRISS certified values.
Analysis of elemental composition of Fe1-xNix and Si1-xGex alloy thin films by EPMA and µ-XRF
(2019)
The present study reports on measurements on thin Fe-Ni films on silicon and first-time results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide Substrate by electron probe microanalysis (EPMA). Standard-based and standardless EPMA (with EDS) results were used in combination with the thin film analysis software Stratagem for the quantification.
Further, X-ray fluorescence analysis (XRF) can be used for the determination of elemental composition and thickness of such films as well. In this case, XRF with a μ-focus X-ray source (μ-XRF) attached to a SEM was applied. For quantification, a fundamental parameter (FP) approach has been used to calculate standard-based and standardless results.
Both thin film systems have been chosen as samples of an international round robin test (RRT) organised in the frame of standardisation technical committee ISO/TC 201 ‘Surface chemical analysis’, under the lead of KRISS. The main objective of the RRT is to compare the results of atomic fractions of Fe1-xNix and Si1-xGex alloy films obtained by different surface Analysis techniques, such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and secondary ion mass spectrometry (SIMS) applied in the depth-profiling operation mode.
Five samples of different atomic fractions of each thin film system, i.e., Fe1-xNix and Si1-xGex, have been grown by ion beam sputter deposition on silicon and Al2O3 wafers, respectively. Reference FeNi and SiGe films with well-known elemental composition and thickness have been also supplied for standard-based analysis. An excellent agreement has been obtained between the atomic fractions determined by EPMA and µ-XRF with the KRISS certified values.