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The Key Comparison K67 and the parallel Pilot Study P108 on quantitative analysis of thin alloy films have been completed in the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The aim of these inter-laboratory comparisons is to determine the degree of equivalence in the measurement capability of national metrology institutes (NMIs) and designated institutes (DIs) for the determination of the composition of thin alloy films. The measurand is expressed in atomic percent. A Fe-Ni alloy film with a certified composition was available for the participants of the inter-laboratory comparison. It has been used as a reference specimen to determine the relative sensitivity factors (RSF) of Fe and Ni for the different analytical methods used by the participants to determine the composition of the test sample. As was shown in the preceding Pilot Study P98, the degrees of equivalence in the measurement capabilities of the participants can be improved in that way. The composition of the reference specimen was certified by inductively coupled plasma mass spectrometry (ICP-MS) using the isotope dilution method. The in-depth and lateral homogeneity, determined in terms of elemental composition, of the certified reference sample and the unknown test sample were confirmed by secondary ion mass spectrometry (SIMS) using C60 primary ions by the leading laboratory. Five laboratories participated in the key comparison. Four of them used x-ray photoelectron spectroscopy (XPS) and one Auger electron spectroscopy (AES). One laboratory participated in the parallel P108 pilot study using electron probe micro analysis with an energy-dispersive spectrometer (ED EPMA) and XPS.
Simple procedures for specifying and checking the performance of energy dispersive X-ray spectrometers (EDS) have been since 2002 available in form of the international standard ISO 15632:2002 [1]. When specifying their spectrometers all major EDS manufacturers refer meanwhile to this standard. Main spectrometer parameters such as energy resolution can be determined as recommended in there. Just several years ago the Si-Li detector has been the mostly widespread type of detector. Since four-five years, silicon drift detector (SDD) EDS providing comparable (in many cases even better) energy resolutions at much higher count rates than the conventional Si-Li’s have got the breakthrough on the market.
It is a latent wish of any SEM/EDS (scanning electron microscope with an energy dispersive spectrometer) analyst to “see more” of the analyzed specimen, i.e. to improve the existing analytical figures of merit.
One key issue are the relatively poor limits of detection (not below 0.1 mass-%) provided by energy dispersive X-ray spectrometry (EDX) with the conventional electron excitation (ED-EPMA). This is a consequence of relatively low peak-to-background ratios and reduced energy resolution when compared to wavelength dispersive spectrometry (WD-EPMA). Recent technological developments make possible to equip the SEM with a wavelength dispersive spectrometer (WDS), so that
significantly better energy resolution can be attained. Also a relative new product that can be easily attached to a SEM/EDS system is a micro-focus X-ray source. Hence, it is possible to perform (micro-focus) X-ray fluorescence spectrometry (μ-XRF) and take advantage of the enhanced peak-to-background ratios (well suited for trace analysis). However, there are also some disadvantages: an increased measurement time and excitation with a high current in the 10s of nA range are usually required for WDS. μ-XRF provides more bulk information and poor limits of detection for light elements. By combining the advantages of these analytical techniques “seeing more” becomes possible.
CCQM (Consultative Committee for Amount of Substance - Metrology in Chemistry) is an international body of the Meter Convention (BIPM) established as a framework of National Metrology Institutes running inter-laboratory of comparisons to demonstrate the international comparability of chemical measurements, with traceability to international or national reference standards. In 2003 the surface analysis working group (SAWG) was established at CCQM and since then several inter-laboratory comparisons in the field of EPMA have been carried out. In many cases the EPMA results deviated significantly from each other and the expanded uncertainties were greater than expected. Both methods EDS and WDS were employed. However, light elements such as carbon and nitrogen were the major elements analyzed and it is known that the corresponding lowenergy characteristic X-ray lines are more challenging to quantify by EPMA than the higher energy lines of elements with higher atomic numbers. Moreover, the standards selected and their qualities were variable, the quantification models were different, and the acquisition parameters were not specified sufficiently in the analysis instructions.
More and more sub-micro and nano-materials shall be "quickly", but accurately characterized with respect to their morphology, shape, size or size distribution, but also to the chemical composition as well by means of an SEM/EDX (Scanning Electron Microscopy / X-Ray Energy Dispersive Spectrometry) system. This undertaking is becoming successful indeed if the transmission mode at low voltages such as those at a SEM, i. e. mostly up to 30 kV, and EDX, respectively is employed. The transmission mode at conventional SEM can e "activated" firstly by re-defining the specimen to be analyzed and preparing it as a thin specimen, which is quasi-transparent to electrons and by finding a way of collecting only the transmitted electrons for analysis. The first issue can be easily realized by using the conventional TEM grids (and the respective sample preparation); the second one becomes feasible either (i) by placing a socalled STEM semiconductor detector directly under the thin specimen or (ii) by using a Special transmission set-up, which enables to the conventional Everhart-Thornley detector to collect only transmitted electrons by blocking the direct collection of secondary electrons and guiding only the transmitted electrons onto it.
To compare the performance of different energy dispersive X-ray spectrometers (EDS), it is important to define characteristic spectrometer parameters. The ISO 15632 standard defines parameters like energy resolution as FWHM for the Kα lines of carbon, fluorine and manganese. The quantum efficiency, which is the ratio of the detected photons divided by the number of incoming photons for different energies, is another significant spectrometer property. It is important for the light element and low energy line detection sensitivity as well as for higher photon energies above 10 keV. A striking EDS feature, provided and marketed by many manufactures, is the active area of the detector, although actually, the solid angle available for photon collection is the more relevant geometrical parameter. It is defined as: Ω = A /r2 with A being the active area of a spherical detector and r being the distance between the point of the radiation origin and the center of the surface of the active detector chip. A more accurate calculation should be used for large flat detector areas. One should note that the solid angle Ω is not an intrinsic spectrometer property. It can only be defined for a specific detector in combination with a specific system (e.g. SEM, EPMA or TEM). Thus, the minimal possible distance r is determined by the particular geometry e.g. a possible interference with the pole piece or other detectors/components in the chamber of a microscope. New EDS technologies use e.g. integrated SDD chips or inclined chips in thinner detector fingers which can be placed closer to the sample with the final result of larger real solid angles. Therefore, the knowledge of the real solid angle is one of the crucial parameters of an EDS microscope combination. A straightforward way to estimate the real solid angle is to simply determine A and r. If respective data are not provided by the manufacturer, this approach can be difficult.
Need for large-area EDS detectors for imaging nanoparticles in a SEM operating in transmission mode
(2014)
An inter-laboratory comparison organized as a pilot study (PS) has been performed under the umbrella of the Consultative Committee for Amount of Substance – Metrology in Chemistry (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare k-values measured with Electron Probe X-ray Microanalysis (EPMA) for copper-gold alloys. The k-value, defined as the ratio of the Xray photon intensity of an X-ray characteristic line of the unknown sample to the corresponding one in the reference material, is a rough estimate of the mass fraction of the respective element. Basically, the mass fractions can be calculated from the k-values after applying a matrix correction procedure, which includes empirical approaches, so that traceability gets lost. Due to its physical, measurable nature, the k-value has been selected in the present PS as the primary measurand. The mass fraction has been set as the secondary (derived) measurand. Both EDX and WDX have been employed. The WDX results and the overall comparability between the k-values obtained by EDX and WDX are still in progress.
A pilot study (PS) has been performed under the Consultative Committee for Amount of Substance (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare the atomic fractions of Cu, In, Ga and Se in CIGS alloy films. Four polycrystalline CIGS films with different atomic fractions were fabricated by variation of the relative atomic fraction of Ga on 100 mm x 100 mm soda-lime glass (SLG) substrates. Similar to real solar cells the atomic fractions of the four elements (Cu, In, Ga, Se) are not homogeneous with depth. For the analysis of the CIGS layers of about 2 μm thickness depth profiling with surface analysis techniques such as XPS, AES and SIMS was recommended. A CIGS alloy reference sample with atomic fractions certified by isotope dilution ICP-MS at KRISS has been also put at disposal by the coordinator of the comparison. The certified values were close to the atomic fractions of the samples to be analyzed. Hence, the atomic fractions of Cu, In, Ga and Se in the CIGS films could be determined by the relative sensitivity factors (RSF) derived from the reference CIGS film. The total ion intensities of the constituent elements were obtained by the total number counting (TNC) method.