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Organisationseinheit der BAM
Energy-dispersive X-ray spectrometry (EDX) is one of the most applied methods used for the analysis of the chemical composition of solids and thin films. Recent progress in EDS (Energy Dispersive X-ray Spectrometer) technology has increased the general performance also in the energy range < 1 keV addressing low Z elements. Suitable test materials to be employed especially to check the low-energy EDS performance – also in line with ISO 15632 - are rather limited and mainly based on C K and F K lines. In order to obtain valid results in laboratories accredited in compliance with ISO/IEC 17025 it is necessary to periodically check the instrument performance.
Potential candidates of reference nano-materials are manufactured and systematically characterized in particular with respect to their morphology (shape, size and size distribution) in the frame of the running large European project NanoValid. By exploiting the transmission operation mode in a SEM, known as T-SEM, it is demonstrated by means of three representative examples of nanoparticles how a quick morphological inspection up to a complete, metrological characterization is feasible.
CCQM key comparison K-129 for the quantitative analysis of Cu(In,Ga)Se2 (CIGS) films has been performed by the Surface Analysis Working Group (SAWG) of the Consultative Committee for Amount of Substance (CCQM). The objective of this key comparison is to compare the equivalency of the National Metrology Institutes (NMIs) and Designated Institutes (DIs) for the measurement of mole fractions of Cu, In, Ga and Se in a thin CIGS film. The measurand of this key comparison is the average mole fractions of Cu, In, Ga and Se of a test CIGS alloy film in the unit of mole fraction (mol/mol). Mole fraction with the metrological unit of mol/mol can be practically converted to atomic fraction with the unit of at%.
In this key comparison, a CIGS film with certified mole fractions was supplied as a reference specimen to determine the relative sensitivity factors (RSFs) of Cu, In, Ga and Se. The mole fractions of the reference specimen were certified by isotope dilution - inductively coupled plasma/mass spectrometry (ID-ICP/MS) and are traceable to the SI. A total number counting (TNC) method was recommended as a method to determine the signal intensities of the constituent elements acquired in the depth profiles by Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Seven NMIs and one DI participated in this key comparison. The mole fractions of the CIGS films were measured by depth profiling based-SIMS, AES and XPS. The mole fractions were also measured by non-destructive X-Ray Fluorescence (XRF) Analysis and Electron Probe Micro Analysis (EPMA) with Energy Dispersive X-ray Spectrometry (EDX).
In this key comparison, the average degrees of equivalence uncertainties for Cu, In, Ga and Se are 0.0093 mol/mol, 0.0123 mol/mol, 0.0047 mol/mol and 0.0228 mol/mol, respectively. These values are much smaller than that of Fe in a Fe-Ni alloy film in CCQM K-67 (0.0330 mol/mol). This means that the quantification of multi-element alloy films is possible by depth profiling analysis using the TNC method.
A pilot study (PS) has been performed under the Consultative Committee for Amount of Substance (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare the atomic fractions of Cu, In, Ga and Se in CIGS alloy films. Four polycrystalline CIGS films with different atomic fractions were fabricated by variation of the relative atomic fraction of Ga on 100 mm x 100 mm soda-lime glass (SLG) substrates. Similar to real solar cells the atomic fractions of the four elements (Cu, In, Ga, Se) are not homogeneous with depth. For the analysis of the CIGS layers of about 2 μm thickness depth profiling with surface analysis techniques such as XPS, AES and SIMS was recommended. A CIGS alloy reference sample with atomic fractions certified by isotope dilution ICP-MS at KRISS has been also put at disposal by the coordinator of the comparison. The certified values were close to the atomic fractions of the samples to be analyzed. Hence, the atomic fractions of Cu, In, Ga and Se in the CIGS films could be determined by the relative sensitivity factors (RSF) derived from the reference CIGS film. The total ion intensities of the constituent elements were obtained by the total number counting (TNC) method.
The certified reference material BAM-L200, a nanoscale stripe pattern for length calibration and specification of lateral resolution, is described. BAM-L200 is prepared from a cross-sectioned epitaxially grown layer stack of AlxGa1–xAs and InxGa1–xAs on a GaAs substrate. The surface of BAM-L200 provides a flat pattern with stripe widths ranging down to 1 nm. Calibration distances, grating periods and stripe widths have been certified by TEM with traceability to the length unit. The combination of gratings, isolated narrow stripes and sharp edges of wide stripes offers plenty of options for the determination of lateral resolution, sharpness and calibration of length scale at selected settings of imaging surface-analytical instruments. The feasibility of the reference material for an analysis of the lateral resolution is demonstrated in detail by evaluation of ToF-SIMS, AES and EDX images. Other applications developed in the community are summarized, too. BAM-L200 fully supports the implementation of the revised International Standard ISO 18516 (in preparation) which is based on knowledge outlined in the Technical Report ISO/TR 19319:2013.
Ionic liquids (ILs) are proposed as simple and efficient test materials to evaluate the performance of energy dispersive X-ray spectrometers (EDS) in the low energy range below 1 keV. By only one measurement, C Kα, N Kα, O Kα, and F Kα X-ray lines can be excited. Additionally, the S Kα line at 2.3 keV and, particularly, the S L series at 149 eV complete the picture with X-ray lines offered by the selected ILs. The well-known (certifiable) elemental composition of the ILs selected in the present study can be used to check the accuracy of results produced with the available EDS quantification routines in the low energy range, simultaneously, for several low atomic number elements. A comparison with other reference materials in use for testing the performance of EDS in the low energy range is included.
Introduction
(2020)
The purpose of this book is to provide a comprehensive collection of analytical methods that are commonly used to measure nanoparticles, providing information on one, or more, property of importance. The chapters provide up-to-date information and guidance on the use of these techniques, detailing the manner in which they may be reliably employed. Within this chapter, we detail the rationale and context of the whole book, which is driven by the observation of a low level of reproducibility in nanoparticle research. The aim of the book is to encourage awareness of both the strengths and weaknesses of the various methods used to measure nanoparticles and raise awareness of the range of methods that are available. The editors of the book have, for many years, been engaged in European projects and standardization activities concerned with nanoparticle analysis and have identified authors who are experts in the various methods included within the book. This has produced a book that can be used as a definitive guide to current best practice in nanoparticle measurement.