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Recently, we suggested an unconventional approach [the so-called Internal-Field-Guarded-Active-Region Design (IFGARD)] for the elimination of the crystal polarization field induced quantum confined Stark effect (QCSE) in polar semiconductor heterostructures. And in this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the QCSE in strongly polar [000-1] wurtzite GaN/AlN nanodiscs while reducing the exciton life times by more than two orders of magnitude. The IFGARD based elimination of the QCSE is independent of any specific crystal growth procedures. Furthermore, the cone-shaped geometry of the utilized nanowires (which embeds the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement- and QCSE-induced emission energy shifts. Due to the IFGARD, both effects become independently adaptable.
In special cases of angle beam ultrasonic measurement – e.g. defect detection in hot solids as well as flow measurement of liquid gases or energy storage mediums – the applied transducer has to withstand extreme temperatures. Since the irradiation angle into the specific material is determined not only by wedge design, but also by the speed of sound in both the wedge material and the tested object, the developer must take into account the speed of the wave propagation in a wedge material over the whole temperature range of transducers application.
In this study we investigate the temperature dependence of the speed of longitudinal wave propagation in 10 different materials in the range from -200 °C to 400 °C. The investigated materials belong to different material classes (ceramics, glass, as well as ferrous and non-ferrous metals) and are all temperature-resistant up to at least 600 °C, and therefore applicable as wedge materials in an ultrasonic transducer for use at extreme temperatures.
Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design “IFGARD”) for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppression of the Stark redshift on the order of electronvolt and spatial charge carrier separation is independent of the specific polar semiconductor material or the related growth procedures. In this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the quantum-confined Stark effect in strongly polar [000-1] wurtzite GaN/AlN nanodiscs as evidenced by a reduction of the exciton lifetimes by up to four orders of magnitude. Furthermore, the tapered geometry of the utilized nanowires (which embed the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement and Stark emission energy shifts. Due to the IFGARD, both effects become independently adaptable.
One of the most significant limitations for the quantum efficiency of group III-nitride based light emitters is the spatial electron-hole separation due to the quantum-confined Stark effect (QCSE). To overcome this problem, Hönig et al. [1] proposed a novel concept, the Internal-Field-Guarded-Active-Region Design (IFGARD), which suppresses the QCSE for wurtzite crystals in the [0001] direction. Here, we show how encapsulating the active region by additional guard layers results in a strong reduction of the built-in electric field in c-plane wurtzite nanostructures. Even more importantly, we demonstrate the first experimental evidence for the successful realization of an IFGARD structure based on GaN/AlN heterostructures embedded in GaN nanowires. By means of power-dependent and time-resolved µ-photoluminescence (µ-PL) we experimentally proof the validity of the unconventional IFGARD structure. We managed to tune the emission of 4-nm-thick GaN nano-discs up to 3.32 eV at low excitation powers, which is just 150 meV below the bulk GaN bandgap. Our results demonstrate an almost complete elimination of the QCSE in comparison to conventional structures which show approximately 1 eV red-shifted emission. The suppression of the QCSE results in a significant increase of the radiative exciton decay rates by orders of magnitude and demonstrates the potential of IFGARD structures for future light sources based on polar heterostructures.
[1] Hönig et al., Phys. Rev. Applied 7, 024004 (2017)
Polar semiconductor materials enable a variety of classic and quantum-light sources, which are optimized continuously. However, one key problem—the inherent electric crystal polarization of such materials—remains unsolved and deteriorates the radiative exciton decay rate. We suggest a sequence of reverse interfaces to compensate these polarization effects, while the polar, natural crystal growth direction is maintained. Former research approaches, like growth on less-polar crystal planes or even the stabilization of unnatural phases, never reached industrial maturity. In contrast, our concept provides a way for the development of ultrafast devices based on established growth processes for polar materials, while the electric potential landscape becomes adjustable.
We show both theoretically and experimentally how the encapsulation of the active region by additional guard layers can be used to achieve a significant reduction of the built-in electric fields in polar nitride heterostructures. This reduction of the QCSE results in a strongly enhanced emission intensity and faster recombination dynamics in the active region. In particular we are able to shift the emission energy of 4-nm-thick GaN nano-discs up to 3.32 eV, which is just 150 meV below the bulk GaN bandgap as compared to a red-shift of about 1 eV in a conventional heterostructure with the same thickness.