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Polar semiconductor materials enable a variety of classic and quantum-light sources, which are optimized continuously. However, one key problem—the inherent electric crystal polarization of such materials—remains unsolved and deteriorates the radiative exciton decay rate. We suggest a sequence of reverse interfaces to compensate these polarization effects, while the polar, natural crystal growth direction is maintained. Former research approaches, like growth on less-polar crystal planes or even the stabilization of unnatural phases, never reached industrial maturity. In contrast, our concept provides a way for the development of ultrafast devices based on established growth processes for polar materials, while the electric potential landscape becomes adjustable.
In special cases of angle beam ultrasonic measurement – e.g. defect detection in hot solids as well as flow measurement of liquid gases or energy storage mediums – the applied transducer has to withstand extreme temperatures. Since the irradiation angle into the specific material is determined not only by wedge design, but also by the speed of sound in both the wedge material and the tested object, the developer must take into account the speed of the wave propagation in a wedge material over the whole temperature range of transducers application.
In this study we investigate the temperature dependence of the speed of longitudinal wave propagation in 10 different materials in the range from -200 °C to 400 °C. The investigated materials belong to different material classes (ceramics, glass, as well as ferrous and non-ferrous metals) and are all temperature-resistant up to at least 600 °C, and therefore applicable as wedge materials in an ultrasonic transducer for use at extreme temperatures.
Recently, we suggested an unconventional approach (the so-called Internal-Field-Guarded-Active-Region Design “IFGARD”) for the elimination of the quantum-confined Stark effect in polar semiconductor heterostructures. The IFGARD-based suppression of the Stark redshift on the order of electronvolt and spatial charge carrier separation is independent of the specific polar semiconductor material or the related growth procedures. In this work, we demonstrate by means of micro-photoluminescence techniques the successful tuning as well as the elimination of the quantum-confined Stark effect in strongly polar [000-1] wurtzite GaN/AlN nanodiscs as evidenced by a reduction of the exciton lifetimes by up to four orders of magnitude. Furthermore, the tapered geometry of the utilized nanowires (which embed the investigated IFGARD nanodiscs) facilitates the experimental differentiation between quantum confinement and Stark emission energy shifts. Due to the IFGARD, both effects become independently adaptable.