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Eingeladener Vortrag
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The chemical constitution of functionalized supports is an important parameter that determines their performance in a broad range of applications, e.g. for immobilization of biomolecules. Supports with amino functionalized surfaces are also often used for DNA microarray experiments. However, spectral data which have been reported for surfaces with amino functionalities suffer from some inconsistencies. In this article a detailed XPS (X-ray photoelectron spectroscopy) and NEXAFS (Near edge X-ray absorption fine structure) database for amino functionalized surfaces is presented. Amino-terminated surfaces prepared from aliphatic and aromatic aminosilanes or aminothiols and a field sample are considered. Effects of aging in air and damage by radiation are addressed as well.
First results of an inter-laboratory comparison (27 participants in Europe, Japan and USA) of XPS data obtained with non-conducting samples are presented. Binding energies of Al 2s for alumina, N 1s and imide C 1s for Kapton and Sr 3p3/2 for a strontium titanate film on glass were obtained after static charge referencing with the help of 15 nm gold particles deposited at the surface of the test samples. For the alumina sample C 1s static charge referenced data are also presented. Repeat standard deviations (sr), between standard deviations (sb), reproducibility standard deviations (sR) and total means are evaluated from the experimental data. It can be stated that although the repeat standard deviation is as small as 0.05 eV in the best case, the standard deviation characterizing the reproducibility of the method is obviously not better than 0.15 eV in the best case at the present time. The knowledge of these standard deviations is important for metrology, validations of analytical procedures relying on qualitative photoelectron spectroscopy and XPS databanking.
Overlayers of SiO2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide overlayer by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The relative combined standard uncertainty of the method was found to be 15%. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of considerable importance for both the estimated values of overlayer thickness and combined standard uncertainties. The XPS results were compared with ellipsometry data.
Results from a study conducted between National Metrology Institutes (NMIs) for the measurements of the absolute thicknesses of ultra-thin layers of SiO2 on Si are reported. These results are from a key comparison and associated pilot study under the auspices of the Consultative Committee for Amount of Substance. ´Amount of substance´ may be expressed in many ways, and here the measurand is the thickness of the silicon oxide layers with nominal thicknesses in the range 1.5-8 nm on Si substrates, expressed as the thickness of SiO2. Separate samples were provided to each institute in containers that limited the carbonaceous contamination to approximately < 0.3 nm. The SiO2 samples were of ultra-thin on (100) and (111) orientated wafers of Si. The measurements from the laboratories which participated in the study were conducted using ellipsometry, neutron reflectivity, X-ray photoelectron spectroscopy or X-ray reflectivity, guided by the protocol developed in an earlier pilot study. A very minor correction was made in the different samples that each laboratory received. Where appropriate, method offset values attributed to the effects of contaminations, from the earlier pilot study, were subtracted. Values for the key comparison reference values (agreed best values from a Consultative Committee study) and their associated uncertainties for these samples are then made from the weighted means and the expanded weighted standard deviations of the means of these data. These results show a dramatic improvement on previous comparisons, leading to 95% uncertainties in the range 0.09-0.27 nm, equivalent to 0.4-1.0 monolayers over the 1.5-8.0 nm nominal thickness range studied. If the sample-to-sample uncertainty is reduced from its maximum estimate to the most likely value, these uncertainties reduce to 0.05-0.25 nm or ~1.4% relative standard uncertainties. The best results achieve ~1% relative standard uncertainty. It is concluded that XPS has now been made fully traceable to the SI, for ultra-thin thermal SiO2 on Si layers, by calibration using wavelength methods in an approach that may be extended to other material systems.
Nitrogen (N)-rich organic thin films were deposited using both low-pressure plasma- and vacuum-ultraviolet-based techniques, from mixtures of ammonia (NH3) and ethylene (C2H4). These films were investigated using angle-resolved and excitation energy resolved X-ray photoelectron spectroscopy (ARXPS and ERXPS, respectively) in order to determine their sub-surface chemical profiles. These two techniques enable one to tune the “XPS 95%” information depth, z 95%, by varying either the angle or the excitation energy. Using a combination of both techniques, z 95% can be varied continuously from 0.7 to 11 nm. The surface-near chemistry is investigated using both high-resolution C 1s spectra and elemental concentrations derived from elemental peak intensities. Results show that while laboratory XPS, and even ARXPS, suggest homogenous surface chemistries, the novel combination of ARXPS and ERXPS points to the existence of a compositional profile in the extreme outer surface layer. Our conclusions are supported by simulations using SESSA software.