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An improved diffusion model is proposed for pore annihilation during HIP of single-crystal nickel-base superalloys. The model assumes the pore dissolution by emission of vacancies and their sink to the low angle boundaries. Calculation, considering distribution of the pore sizes, predicts the kinetics of pore annihilation similar to the experimental one.
Pore annihilation during hot isostatic pressing (HIP) was investigated in the single-crystal nickel-base superalloy CMSX-4 experimentally by interrupted HIP tests at 1288 °C/103 MPa. The kinetics of pore annihilation was determined by density measurement and quantitative metallography. Transmission electron microscopy of a HIPed specimen showed that the pores shrink via dislocation movement on octahedral glide planes. Theoretically pore closure under HIP condition was modelled by the finite element method using crystal plasticity and large strain theories. The modelling gives a similar kinetics of pore annihilation as observed experimentally, however somewhat higher annihilation rate.
The creep behavior of single crystals of the nickel-based superalloy CMSX-4 was investigated at 1288 °C, which is the temperature of the hot isostatic pressing treatment applied to this superalloy in the industry. It was found that at this super-solvus temperature, where no gammaPrime-strengthening occurs, the superalloy is very soft and rapidly deforms under stresses between 4 and 16 MPa. The creep resistance was found to be very anisotropic, e.g., the creep rate of [001] crystals was about 11 times higher than that of a [111] crystal. The specimens of different orientations also showed a very different necking behavior. The reduction of the cross-sectional area psi of [001] crystals reached nearly 100 pct, while for a [111] crystal psi = 62 pct. The EBSD analysis of deformed specimens showed that despite such a large local strain the [001] crystals did not recrystallize, while a less deformed [111] crystal totally recrystallized within the necking zone. The recrystallization degree was found to be correlated with deformation behavior as well as with dwell time at high temperature. From the analysis of the obtained results (creep anisotropy, stress dependence of the creep rate, traces of shear deformation, and TEM observations), it was concluded that the main strain contribution resulted from <01-1>{111} octahedral slip.
Mit Hilfe des HIP-Verfahrens („Hot Isostatic Pressing“) werden Poren in der einkristallinen Nickel-Basis Superlegierung CMSX-4 kontinuierlich geschrumpft und dadurch die nach der Erstarrung und der Wärmebehandlung vorhandene Porosität stark reduziert. In diesem Beitrag werden experimentelle und numerische Untersuchungen zu den Mechanismen der Porenschrumpfung zusammengefasst. Es zeigt sich, dass das Verformungsverhalten während Kriechversuchen bei der HIP-Temperatur durch Versetzungsgleitung auf oktaedrischen Ebenen dominiert wird.
Dagegen zeigen Messungen der Porositätsabnahme und Simulationen des Porenschließens, dass die Kinetik der Porenschrumpfung durch das Phänomen der Leerstellendiffusion zwischen Poren und Kleinwinkelkorngrenzen („Low Angle Boundary“, LAB) bestimmt wird. Im Gegensatz führt die klassische Kristallviskoplastizität zu einer systematischen Überschätzung dieser Kinetik. Der scheinbare Widerspruch lässt sich auflösen, wenn man bedenkt, dass auf der Skala der Poren Versetzungsquellen nicht gleichmäßig verteilt sind, wie in der konventionellen Kristallplastizität implizit angenommen wird. Stattdessen wird in einem weiterführenden Modell davon ausgegangen, das Kleinwinkelkorngrenzen (LABs) als Versetzungsquellen fungieren, während die Scherspannungen sehr stark in der Nähe der Poren lokalisiert sind, was die Emission von Versetzungen deutlich reduziert.
The investigation of creep behavior of the single crystal superalloy CMSX-4 at 1288°C is important for the understanding of deformations mechanisms under hot isostatic pressing (HIP). This treatment is used to increase the lifetime of single crystal superalloys by reducing the number of cavities. The understanding of the internal processes during this treatment is still limited due to the material being not single-phase at room temperature, the extreme conditions of HIP and the complexity of the material.
The result of predicting the pore shrinkage rate using classical crystal plasticity was not satisfying. A more complex model has been implemented, now taking the heterogeneity of dislocation sources into account. By introducing a dislocation density, one can describe the transport, nucleation and interaction of dislocations.
The investigation of creep behavior of the single crystal superalloy CMSX-4 at 1288°C is important for the understanding of deformations mechanisms under hot isostatic pressing (HIP). This treatment is used to increase the lifetime of single crystal superalloys by reducing the number of cavities. The understanding of the internal processes during this treatment is still limited due to the material being not single-phase at room temperature, the extreme conditions of HIP and the complexity of the material.
The result of predicting the pore shrinkage rate using classical crystal plasticity was not satisfying. A more complex model has been implemented, now taking the heterogeneity of dislocation sources into account. By introducing a dislocation density, one can describe the transport, nucleation and interaction of dislocations.
Single-crystal components made of nickel base superalloys contain pores after casting and homogenization heat treatment. Hot isostatic pressing (HIP), which is carried above the γ' -solvus temperature of the alloy, is industrially applied to reduce porosity. A modeling of HIP based on continuously distributed dislocations is developed in a 2D setting. Glide and climb of straight-edge dislocations, as well as vacancy diffusion, are the deformation mechanisms taken into account.
Thereby, dislocation glide is controlled by dragging a cloud of large atoms, and climb is controlled by vacancy diffusion. Relying on previous investigations of the creep behavior at HIP temperatures, it is assumed that new dislocations are nucleated at low-angle boundaries (LAB) and move through subgrains until they either reach the opposite LABs or react with other dislocations and annihilate.
Vacancies are created at the pore surface and diffuse through the alloy until they are either consumed by climbing dislocations or disappear at the LABs. The field equations are solved by finite elements. It is shown that pore shrinking is mostly controlled by vacancy diffusion as the shear stresses at the LABs are too low to
nucleate a sufficient amount of dislocations.
The failure of fiber reinforced composites under transverse loading is investigated on a
representative volume element. The volume element is composed of a twelve fiber hexagonal
array. The debonding of the central fiber is studied under transverse shear as well as under
transverse compressive loading by calculating the mode I and mode II part of the energy
release rate. The initiation of failure is assumed to take place at the location of maximum
tensile or maximum shear stresses, respectively. In order to determine the failure initiation
point, the stress field in the interface before crack initiation is calculated.
The determination of the strength and the failure behaviour of fiber reinforced composites is a complex task. This is mainly due to the anisotropy and the inhomogeneiety of the material on the microscale. The strength or the fracture toughness of the interface between fiber and matrix is the key factor controlling the failure process on microscale, especially under loads transverse to the fiber axes.
The ultimate failure of a laminate is a complex process consisting of a large number of different subprocesses. Due to its highly dynamic nature on one hand and the microscopical scale on the other it is not possible to observe the ultimate failure directly or even to analyse it theoretically. However, long before ultimate failure occurs a large number of elementary failure processes take place in a rather
static manner or at least at low crack Propagation speed.