Filtern
Dokumenttyp
Sprache
- Englisch (6)
Schlagworte
- Catastrophic optical damage (4)
- Thermography (4)
- High-power diode lasers (3)
- Semiconductor laser (3)
- Destructive testing (2)
- Non-destructive testing (2)
- Auger effect (1)
- Carrier density (1)
- Heating (1)
- High power diode lasers (1)
Nonequilibrium vibrational excitations of para-nitroaniline (PNA, 4-nitroaniline) occurring after internal conversion from the photoexcited charge transfer state are studied by picosecond anti-Stokes Raman scattering. Vibrational excess populations with distinctly different picosecond rise and decay times are found for a number of modes with frequencies between 860 and 1510 cm1, including the overtone of a non-Raman active mode. A nonthermal distribution of vibrational populations exists up to about 6 ps after photoexcitation. The time-resolved experiments are complemented by steady-state infrared and Raman measurements as well as calculations based on density functional theory, providing a detailed analysis of the steady-state vibrational spectra of PNA and two of its isotopomers. A weakly Raman active vibration at about 1510 cm1 displays the fastest rise time and a pronounced excess population andthusrepresents the main accepting mode. We suggest that an out-of-plane mode giving rise to the overtone Raman band at this frequency acts both as coupling and accepting mode in the internal conversion process.
Catastrophic optical damage (COD) is analyzed during single current pulse excitation of 975 nm emitting diode lasers. Power transients and thermal images are monitored during each pulse. The COD process is unambiguously related to the occurrence of a thermal flash of Plancks radiation. We observe COD to ignite multiple times in subsequent pulses. Thermography allows for tracing a spatial motion of the COD site on the front facet of the devices. The time constant of power decay after the onset of COD has values from 400 to 2000 ns, i.e., an order of magnitude longer than observed for shorter-wavelength devices.
The early stages of catastrophic optical damage (COD) in 808 nm emitting diode lasers are mapped by simultaneously monitoring the optical emission with a 1 ns time resolution and deriving the device temperature from thermal images. COD occurs in highly localized damage regions on a 30 to 400 ns time scale which is determined by the accumulation of excess energy absorbed from the optical output. We identify regimes in which COD is avoided by the proper choice of operation parameters.
Single-pulse tests of the catastrophic optical damage (COD) are performed for three batches of diode lasers with different gain-regions. The tests involve in situ inspection of front, rear, and side of the devices by a thermocamera. Devices with an Al-containing gain-region show COD at the front facet, as expected for strong facet heating via surface recombination and reabsorption of laser light. In contrast, Al-free devices with low surface recombination rates tend to fail at the rear facet, pointing to a different heating scenario. The high carrier density at the rear facet favors heating and COD via Auger recombination processes.
Mechanisms and fast kinetics of the catastrophic optical damage (COD) in GaAs-based diode lasers
(2011)
COD diagram determined for a batch of broad-area AlGaAs diode lasers. The time to COD within a single current pulse is plotted versus the actual average optical power in the moment when the COD takes place. Full circles stand for clearly identified COD events (right ordinate), whereas open circles (left ordinate) represent the pulse duration in experiments, where no COD has been detected. A borderline (gray) exists between two regions, i. e., parameter sets, of presence (orange) and absence of COD (blue). This borderline is somewhat blurred because of the randomness in filamentation of the laser nearfield and scatter in properties of the involved individual devices.