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- 2011 (21) (entfernen)
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- Beitrag zu einem Tagungsband (7)
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- Femtosecond laser ablation (4)
- Laser processing (4)
- Ablation (3)
- Atomic force microscopy (2)
- Damage threshold (2)
- Dielectrics (2)
- Doping (2)
- High-speed optical techniques (2)
- Incubation (2)
- Nanosecond laser ablation (2)
- Optical properties (2)
- Scanning electron microscopy (2)
- Selective emitter (2)
- Semiconductors (2)
- Silicon (2)
- Silicon compounds (2)
- Surface plasmon polaritons (2)
- Tellurium dioxide crystals (2)
- Time-of-flight mass spectroscopy (2)
- (LIPSS) (1)
- 532 nm wavelength (1)
- CIGS (1)
- Chalkopyrite (1)
- Conduction bands (1)
- Cu(InGa)Se2 (1)
- Dünnschichtsolarzellen (1)
- Electrical properties (1)
- Isotopes (1)
- Laser beam effects (1)
- Laser scribing (1)
- Laser-induced periodic surface structures (1)
- Laser-induced periodic surface structures (LIPSS) (1)
- Laserstrukturierung (1)
- Light transmission (1)
- Multicrystalline silicon (1)
- Multiphoton absorption (1)
- Nanosecond laser (1)
- Nanosecond pulses (1)
- Neodymium (1)
- Optical harmonic generation (1)
- Optical pulse shaping (1)
- Photovoltaik (1)
- Refractive index (1)
- Second harmonic generation (SHG) (1)
- Self-induced transparency (1)
- Silicon solar cell (1)
- Simulation (1)
- Solid lasers (1)
- Surface morphology (1)
- TeO2 (1)
- Thin-film solar cells (1)
- Time-of-flight mass spectrometry (TOF-MS) (1)
- VUV nanosecond laser ablation (1)
- a-Si/my-Si (1)
- second laser (1)
Eingeladener Vortrag
- nein (4)
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold.
Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production.
Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe-
Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht.
One wavelength fits all
(2011)
Structuring of Thin-film Solar Cells with a Single Laser Wavelength Structuring of a PV module into a number of cells is necessary to lower the current and to increase the voltage, and is typically accomplished with nanosecond laser pulses of different wavelengths. Duetothe many available laser sources, complex and expensive scribing Setups are necessary. To overcome this a concept for laser structuring of thin-film PV modules using a single wavelength allows prediction ofthe ablation behaviourfor a given laser pulse energy.
Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 um, Repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO? (c-Te02) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the Ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use timeof-flight mass spectrometry (TOFMS) to analyze the elemental composltion of the ablation products generated upon laser irradiation of c-Te02 with single fs- (pulse duration ~ 200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three Order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion Signals strongly depends on the applied laser pulse energy. Singly charged Oxygen ions (0+) are always present as a byproduct in both kinds of laser ablation.
Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 nm, repetition
rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm,
repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2 ) surfaces
was performed in air using the direct focusing technique. A multi-method
characterization using optical microscopy, atomic force microscopy and scanning
electron microscopy revealed the surface morphology of the ablated craters. This allowed
us at each irradiation site to characterize precisely the lateral and vertical dimensions of
the laser-ablated craters for different laser pulse energies and number of laser pulses per
spot. Based on the obtained information, we quantitatively determined the ablation
threshold fluence for the fs laser irradiation when different pulse numbers were applied to
the same spot using two independent extrapolation techniques. We found that in the case
of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the
number of laser pulses applied to the same spot indicating that incubation effects play an
important role in this material. In the case of VUV ns laser pulses, the ablation rate is
significantly higher due to the high photon energy and the predominantly linear
absorption in the material. These results are discussed on the basis of recent models of the
interaction of laser pulses with dielectrics. In the second part of this chapter, we use time-
of-flight mass spectrometry (TOFMS) to analyze the elemental composition of the
ablation products generated upon laser irradiation of c-TeO2 with single fs- (pulse
duration ~200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength
355 nm). Due to the three order of magnitude different peak intensities of the ns- and fs
laser pulses, significant differences were observed regarding the laser-induced species in
the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in
the form of many different isotopes were observed in case of both irradiations. In the case
of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and
there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te
ion signals strongly depends on the applied laser pulse energy. Singly charged oxygen
ions (O+) are always present as a byproduct in both kinds of laser ablation.
The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of fused silica with multiple irradiation sequences consisting of five Ti:sapphire femtosecond (fs) laser pulse pairs (150 fs, 800 nm) is studied experimentally. A Michelson interferometer is used to generate near-equal-energy double-pulse sequences with a temporal pulse delay from -20 to +20 ps between the cross-polarized individual fs-laser pulses (~0.2 ps resolution). The results of multiple double-pulse irradiation sequences are characterized by means of Scanning Electron and Scanning Force Microscopy. Specifically in the sub-ps delay domain striking differences in the surface morphologies can be observed, indicating the importance of the laser-induced free-electron plasma in the conduction band of the solids for the formation of LIPSS.
We describe a method to visualize ultrafast laser-induced refractive index changes in transparent materials with a 310 fs impulse response and a submicrometer spatial resolution. The temporal profile of the laser excitation sequence can be arbitrarily set on the subpicosecond and picosecond time scales with a pulse shaping unit, allowing for complex laser excitation. Time-resolved phase contrast microscopy reveals the real part of the refractive index change and complementary time-resolved optical transmission microscopy measurements give access to the imaginary part of the refractive index in the irradiated region. A femtosecond laser source probes the complex refractive index changes from the excitation time up to 1 ns, and a frequency-doubled Nd:YAG laser emitting 1 ns duration pulses is employed for collecting data at longer time delays, when the evolution is slow. We demonstrate the performance of our setup by studying the energy relaxation in a fused silica sample after irradiation with a double pulse sequence. The excitation pulses are separated by 3 ps. Our results show two dimensional refractive index maps at different times from 200 fs to 100 µs after the laser excitation. On the subpicosecond time scale we have access to the spatial characteristics of the energy deposition into the sample. At longer times (800 ps), time-resolved phase contrast microscopy shows the appearance of a strong compression wave emitted from the excited region. On the microsecond time scale, we observe energy transfer outside the irradiated region.
The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of silicon wafer surfaces by linearly polarized Ti:sapphire femtosecond laser pulses (pulse duration 130 fs, central wavelength 800 nm) is studied experimentally and theoretically. In the experiments, so-called low-spatial frequency LIPSS (LSFL) were found with periods smaller than the laser wavelength and an orientation perpendicular to the polarization. The experimental results are analyzed by means of a new theoretical approach, which combines the widely accepted LIPSS theory of Sipe et al. with a Drude model, in order to account for transient (intra-pulse) changes of the optical properties of the irradiated materials. It is found that the LSFL formation is caused by the excitation of surface plasmon polaritons, SPPs, once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material and the subsequent interference between its electrical field with that of the incident laser beam resulting in a spatially modulated energy deposition at the surface. Moreover, the influence of the laser-excited carrier density and the role of the feedback upon the multi-pulse irradiation and its relation to the excitation of SPP in a grating-like surface structure is discussed.
Femtosecond laser-induced periodic surface structures: importance of transient excitation stages
(2011)
Single-pulse femtosecond (fs) (pulse duration ~200 fs, wavelength 398 nm) and nanosecond (ns) (pulse duration 4 ns, wavelength 355 nm) laser ablation have been applied in combination with time-of-flight mass spectrometer (TOFMS) to analyze the elemental composition of the plasma plume of single-crystalline telluria (c-TeO2, grown by the balance controlled Czochralski growth method). Due to the three-order difference of the peak intensities of the ns and fs-laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of their isotopes were observed in case of both irradiations. In case of the ns-laser ablation the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion signals strongly depended on the applied laser pulse energy. Singly charged oxygen ions (O+) are always present as a byproduct in both kinds of laser ablation.
Ultrashort pulses lasers are tools of choice for functionalizing the bulk of transparent materials. In particular, direct photoinscription of simple photonic functions have been demonstrated. Those elementary functions rely on the local refractive index change induced when focusing an ultrashort pulse in the volume of a transparent material. The range of possibilities offered by direct photoinscription is still under investigation. To help understanding, optimizing and assessing the full potential of this method, we developed a time-resolved phase contrast microscopy setup. The imaginary part (absorption) and the real part of the laser-induced complex refractive index can be visualized in the irradiated region. The setup is based on a commercially available phase contrast microscope extended into a pump-probe scheme. The originality of our approach is that the illumination is performed by using a pulsed laser source (i.e. a probe beam). Speckle-related issues are solved by employing adequate sets of diffusers. This laser-microscopy technique has a spatial resolution of 650 nm, and the impulse response is about 300 fs. The laser-induced refractive index changes can be tracked up to milliseconds after the energy deposition. The excitation beam (the pump) is focused with a microscope objective (numerical aperture of 0.45) into the bulk of an a-SiO2 sample. The pump beam can be temporally shaped with a SLM-based pulse shaping unit. This additional degree of flexibility allows for observing different interaction regimes. For instance, bulk material processing with femtosecond and picosecond duration pulses will be studied.
The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of semiconductors and dielectrics by linearly polarized high-intensity Ti:sapphire fs-laser pulses (τ ~100 fs, λ ~800 nm) is studied experimentally and theoretically. In the experiments, two different types of LIPSS exhibiting very different spatial periods are observed (socalled LSFL low spatial frequency LIPSS, and HSFL - high spatial frequency LIPSS), both having a different dependence on the incident laser fluence and pulse number per spot. The experimental results are analyzed by means of a new theoretical approach, which combines the generally accepted LIPSS theory of J. E. Sipe and co-workers [Phys. Rev. B 27, 1141-1154 (1983)] with a Drude model, in order to account for transient changes of the optical properties of the irradiated materials. The joint Sipe-Drude model is capable of explaining numerous aspects of fs-LIPSS formation, i.e., the orientation of the LIPSS, their fluence dependence as well as their spatial periods. The latter aspect is specifically demonstrated for silicon crystals, which show experimental LSFL periods Λ somewhat smaller than λ. This behaviour is caused by the excitation of surface plasmon polaritons, SPP, (once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material) and the subsequent interference between its electrical fields with that of the incident laser beam, resulting in a spatially modulated energy deposition at the surface.
Upon multi-pulse irradiation, a feedback mechanism, caused by the redshift of the resonance in a grating-assisted SPP excitation, is further reducing the LSFL spatial periods. The SPP-based mechanism of LSFL successfully explains the remarkably large range of LSFL periods between ~0.6 λ and λ.