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Advances in ultrafast laser manufacturing: nanostructures, thin films, and scaling perspectives
(2024)
Advanced ultrafast laser technology is a rapidly growing field that currently enables many new industrial and scientific applications. During the last decades, this has been significantly driven by the availability of high-repetition-rate laser sources and novel beam delivery concepts. At the laser side, Moore’s law equally manifests for ultrafast laser technologies, since the average output power of such lasers doubles approximately every two years. This development is mainly driven by the increase of the pulse repetition rates of energetic laser pulses, currently enforcing the development of smart beam control and novel scanning strategies for preventing heat-accumulation and plasma-shielding effects during laser-based materials processing. This keynote presentation addresses the advantages, recent developments, and perspectives of laser processing with ultrashort laser pulses. A special focus is laid on the tailored structuring of thin films as well as the manufacturing and probing of sub-diffraction surface nanostructures – an ongoing race to extreme scales. Current limitations are identified and an outlook to future scaling perspectives will be provided.
Laser-induced periodic surface structures (LIPSS) enable a large variety of different surface functionalizations for applications in the fields of optics, fluidics, tribology, or medicine. Moreover, high spatial frequency LIPSS (HSFL) provide an appealing and straightforward way for the generation of surface nanostructures featuring spatial periods even below 100 nm – far beyond the optical diffraction limit. However, the imposed surface functionalities are usually caused by both, topographic and chemical surface alterations. For exploring these effects in detail, multi-method characterization was performed here for HSFL processed on Ti-6Al-4V alloy upon irradiation with near-infrared ps-laser pulses (1030 nm wavelength, ~1 ps pulse duration, 1 – 400 kHz pulse repetition rate) under different scan processing conditions. The subsequent sample characterization involved morphological and topographical investigations by scanning electron microscopy (SEM), atomic force microscopy (AFM), stylus profilometry (SP), as well as near-surface chemical analyses by X-ray photoelectron spectroscopy (XPS), hard X-ray photoelectron spectroscopy (HAXPES) and depth-profiling time-of-flight secondary ion mass spectrometry (TOF-SIMS). The results allow to qualify the laser ablation depth, the geometrical HSFL characteristics and provide detailed insights into the depth extent and the nature of the ps-laser-induced near-surface oxidation arising from the laser-processing in ambient air and into the relevance of heat-accumulation effects at high pulse repetition rates. Moreover, the direct comparison of the HAXPES and XPS data reveals the role of surface-covering organic contaminants adsorbed from the ambient atmosphere without ion-sputter depth profiling. Furthermore, reduction of the oxides by sputtering can be avoided.