Filtern
Erscheinungsjahr
Dokumenttyp
- Beitrag zu einem Tagungsband (29) (entfernen)
Schlagworte
- Femtosecond laser ablation (7)
- Laser processing (7)
- Laser-induced periodic surface structures (LIPSS) (6)
- Surface functionalization (4)
- Ablation (3)
- Laser-induced X-ray emission (3)
- Applications (2)
- Cu(InGa)Se2 (2)
- Doping (2)
- Laser ablation (2)
- Micro solar cell (2)
- Radiation protection (2)
- Selective emitter (2)
- Silicon (2)
- 100Cr6 (1)
- Application (1)
- Atomic force microscopy (1)
- Bacteria (1)
- Biofilms (1)
- CIGS (1)
- Chalcopyrite (1)
- Chalkopyrite (1)
- Coefficient of thermal expansion (1)
- Coherent scattering (1)
- Copper indium gallium diselenide (CIGSe) (1)
- Cu(In,Ga)Se2 (1)
- Dielectrics (1)
- Dünnschichtsolarzellen (1)
- Electrical properties (1)
- Femtosecond laser (1)
- Femtosecond laser irradiation (1)
- Femtosecond laser modifications (1)
- Femtosecond phenomena (1)
- Finite-difference time-domain calculations (1)
- Force distance curve (1)
- Free electron lasers (1)
- Friction (1)
- Fs-laser patterning (1)
- Glass (1)
- Glass transformation temperature (1)
- Incubation (1)
- Indium phosphide (1)
- Ionic liquid (1)
- LIPSS (1)
- Laser damage (1)
- Laser induced periodic surface structures (LIPSS) (1)
- Laser irradiation (1)
- Laser material processing (1)
- Laser materials processing (1)
- Laser safety (1)
- Laser-induced damage threshold (1)
- Laser-induced forward transfer (1)
- Laser-induced forward transfer (LIFT) (1)
- Laser-induced periodic surface strcutures (LIPSS) (1)
- Laser-induced periodic surface structures (1)
- Lasers (1)
- Laserstrukturierung (1)
- Lubrication (1)
- Micro raman spectroscopy (1)
- Microscopy (1)
- Microstructure (1)
- Molybdenum (1)
- Multicrystalline silicon (1)
- Nanometrology (1)
- Nanosecond pulses (1)
- Networks (1)
- Nonlinear refractive index (1)
- Optical components (1)
- Optical storage (1)
- Optics at surfaces (1)
- PAG (1)
- Photovoltaik (1)
- Polymer (1)
- Quantitative phase-contrast microscopy (1)
- Raman spectroscopy (1)
- Scanning/atomic force microscopy (SFM/AFM) (1)
- Second harmonic generation (SHG) (1)
- Secondary hazard (1)
- Semiconductor (1)
- Semiconductors (1)
- Silica (1)
- Silicate glass systems (1)
- Silicon solar cell (1)
- Simulation (1)
- Spatial light interference microscopy (1)
- Sputter deposition (1)
- Stiffness (1)
- Strain (1)
- Surface oxidation (1)
- Surface plasmon polaritons (1)
- TiAl64V (1)
- Time-resolved coherent XUV scattering (1)
- Time-resolved reflectivity measurements (1)
- Tribology (1)
- Ultra-short pulse laser processing (1)
- Ultrafast phenomena (1)
- Ultrashort laser material interaction (1)
- Ultrashort laser pulses (1)
- Ultrashort pulse laser processing (1)
- Wear (1)
- Wetting (1)
- a-Si/my-Si (1)
Organisationseinheit der BAM
Some nonlinear optical properties such as the nonlinear refractive index and the nonlinear effective absorption, as well as the laser-induced single-pulse ablation threshold are characterized for a series of binary and ternary silicate glasses upon irradiation with near-infrared femtosecond laser pulses (800 nm, 130 fs). The laser-induced ablation threshold varies from 2.3 J/cm² in case of potassium silicate glass up to 4.3 J/cm² in case of Fused Silica. Nonlinear refractive indices are qualitatively similar within the range 1.7-2.7×10-16 cm²/W. Complementary optical and physico-chemical properties like band gap energy and the glass transformation temperature have been measured for all the glasses.
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold.
Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production.
Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe-
Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht.
Compositional dependent response of silica-based glasses after femtosecond laser pulse irradiation
(2013)
Femtosecond laser pulse irradiation of inorganic glasses allows a selective modification of the optical properties with very high precision. This results in the possibility for the production of three-dimensional functional optical elements in the interior of glass materials, such as optical data storage, waveguide writing, etc. The influence of the chemical glass composition to the response upon ultrashort laser irradiation has not been studied systematically. For that, simple silicabased model glasses composed of systematically varying alkaline- and earth-alkaline components were prepared, irradiated on the surface and in the volume with single fs-laser pulses (~130 fs, 800 nm), and were subsequently analyzed by means of micro-Raman spectroscopy and quantitative phase contrast microscopy in order to account for changes in the glass structure and for alterations of the optical refractive index, respectively. The Raman spectroscopic studies of the laser-irradiated spots revealed no change in the average binding configuration (the so called Q-structure), but local changes of bond-angles and bond-lengths within the glass structure structure. Those changes are explained by structural relaxation of the glass network due to densification caused by a transient laser-induced plasma generation and the following shock wave and other thermal phenomena. Glasses with a low amount of network modifiers show changes in the Si-O network while glasses with a high amount of network modifiers react primarily via variation of the nonbridging oxygen ions. The results are discussed in terms of possible structural response mechanisms and conclusions are outlined regarding glass compositions with technical suitability for fs-laser modifications.
Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved.
Ultrashort pulse laser materials processing can be accompanied by the production of X-rays. Small doses per laser pulse can accumulate to significant dose rates at high laser pulse repetition rates which may exceed the permitted X-ray limits for human exposure. Consequently, a proper radiation shielding must be considered in laser machining. A brief overview of the current state of the art in the field of undesired generation of X-ray radiation during ultrashort pulse laser material processing in air is presented.
Micro- and nanostructuring with laser-induced periodic surface structures (LIPSS) has been demonstrated to be feasible in a wide variety of materials including metals, semiconductors and dielectrics. Suitable processing regimes for flat, curved and complex surfaces have been identified for many materials, allowing the generation of diverse applications in fields such as optics, tribology and medicine, to name a few. A common side effect when producing such structures in air environment is the formation of a thin surface oxide layer in the laser irradiated areas. Previous studies have shown that oxidation plays an important role in the tribological performance for which the structures where created, and very recently it has been shown that the laser-induced oxide graded layers may contribute to the formation of a new type of embedded low-spatial frequency LIPSS (LSFL) with annomalous orientation parallel to the laser polarization, in addition to the appearance of the well-known high-spatial frequency LIPSS (HSFL) at the surface. In this contribution, we explore this effect experimentally for chromium nitride (CrN) irradiated with femtosecond laser pulses and compare the findings to finite-difference time-domain (FDTD) simulations of the intensity distributions at different depth positions.