Filtern
Erscheinungsjahr
Dokumenttyp
Sprache
- Englisch (100)
Schlagworte
- Laser-induced periodic surface structures (LIPSS) (26)
- Femtosecond laser ablation (22)
- Femtosecond laser (15)
- Laser ablation (12)
- Laser processing (12)
- Surface functionalization (9)
- Radiation protection (8)
- Nanostructures (7)
- Silicon (7)
- Laser-induced X-ray emission (6)
Organisationseinheit der BAM
- 6 Materialchemie (36)
- 6.2 Material- und Oberflächentechnologien (36)
- 9 Komponentensicherheit (4)
- 9.5 Tribologie und Verschleißschutz (4)
- 6.7 Materialsynthese und Design (3)
- 4 Material und Umwelt (2)
- 4.1 Biologische Materialschädigung und Referenzorganismen (2)
- 6.1 Oberflächen- und Dünnschichtanalyse (2)
- 5 Werkstofftechnik (1)
- 5.1 Mikrostruktur Design und Degradation (1)
- 6.6 Physik und chemische Analytik der Polymere (1)
Paper des Monats
- ja (3)
Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold.
Physical and chemical phenomena resulting from irradiation of silicon and indium phosphide with ultrashort laser pulses (~100fs) were investigated
with respect to the difference between single- and multiple-pulse treatment. In the single-pulse case, several processes were identified: modification,
recrystallization and ablation. All processes exhibit a distinct treshold behaviour. A two photon-absorption coefficient can be determined from a single
spatial ablation profile. Accumulation effects were observed for multi-pulse illumination. Different morphological features like bubbles, rippels and
microcolumns were found.
Ablation of indium phosphide wafers in air was performed with low repetition rate ultrashort laser pulses (130 fs, 10 Hz) of 800 nm wavelength. The relationships between the dimensions of the craters and the ablation parameters were analyzed. The ablation threshold fluence depends on the number of pulses applied to the same spot. The single-pulse ablation threshold value was estimated to be fth(1)=0.16 J/cm2. The dependence of the threshold fluence on the number of laser pulses indicates an incubation effect. Morphological and chemical changes of the ablated regions were characterized by means of scanning electron microscopy and Auger electron spectroscopy.
We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm2 for all pulse durations and multiple-pulse irradiation was observed. For a duration of ,100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous.
The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations =20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment.
Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer.
Ablation experiments with ultrashort laser pulses (pulse duration 150 fs, wavelength 800 nm) on polymers (PC, PMMA) relevant for biomedical technology have been performed in air. The lateral and vertical machining precision was evaluated by optical, atomic force and scanning electron microscopy. The ablation threshold reaches values in the range of 0.52.5 J/cm2 and depends significantly on the number of laser pulses applied to the same spot. The hole diameters are influenced by the laser fluence and the number of laser pulses. The relation between the ablation threshold and the number of laser pulses applied to the same spot is described in accordance with an incubation model.
Laser ablation with femtosecond pulses (130 fs, wavelength 800 nm, repetition rate 2 Hz) was compared with nanosecond-pulse ablation (10 ns, wavelength 266 nm, repetition rate 2.5 Hz) of bariumalumoborosilicate glass in air using the direct focusing technique. Different ablation thresholds and heat-affected zones were observed. The lateral and vertical machining precision was evaluated. Single nanosecond laser pulses in the far UV resulted in a bubble or a circular hole in the centre of the illuminated spot, depending on the applied fluence. The ablation behaviour in the case of near-IR femtosecond pulses contrasted to this. Bubble formation was not detected. It needed repeated pulses at the same spot to modify the surface until material removal could be observed (incubation). Cavity dimensions of less than the beam diameter were achieved in this case.
Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed.
A new approach is presented to quantify the so-called "heat affected zone" (HAZ) during
femtosecond laser pulse processing. Ablation of titanium nitride (TiN) thin films (~3 μm
thickness) by multiple femtosecond laser pulses (τ=130 fs, λ=800 nm) in air environment was
studied by means of two different surface analytical methods both being sensitive to chemical
alterations at the surface. Scanning Auger electron microscopy was applied for a visualization of the
spatial distribution of specific elements (Ti, O) within the laser-modified areas. The chemical state
of the irradiated surface was revealed by complementary x-ray photoelectron spectroscopy. Both
methods were used for a depth-profiling chemical analysis (tracking the elements Ti, N, O, and C)
using an Ar-ion beam for surface sputtering. In a narrow laser fluence range slightly below the
ablation threshold of TiN significant superficial oxidation can be observed leading to the formation
of substoichiometric TiO2-x. At fluences above the ablation threshold, an increased titanium
concentration is observed within the entire ablation craters. Following upon sputter removal the
elemental distribution into the depth of the nonablated material, the results allow an estimation of
the heat-affected zone for femtosecond laser ablation in air environment. According to our analyses,
the HAZ extends up to a few hundreds of nanometers into the nonablated material.
The formation of nearly wavelength-sized laser-induced periodic surface structures (LIPSSs) on single-crystalline silicon upon irradiation with single or multiple femtosecond-laser pulses (pulse duration τ=130 fs and central wavelength λ=800 nm) in air is studied experimentally and theoretically. In our theoretical approach, we model the LIPSS formation by combining the generally accepted first-principles theory of Sipe and co-workers with a Drude model in order to account for transient intrapulse changes in the optical properties of the material due to the excitation of a dense electron-hole plasma. Our results are capable to explain quantitatively the spatial periods of the LIPSSs being somewhat smaller than the laser wavelength, their orientation perpendicular to the laser beam polarization, and their characteristic fluence dependence. Moreover, evidence is presented that surface plasmon polaritons play a dominant role during the initial stage of near-wavelength-sized periodic surface structures in femtosecond-laser irradiated silicon, and it is demonstrated that these LIPSSs can be formed in silicon upon irradiation by single femtosecond-laser pulses.
This contribution investigates laser-induced damage of thin film and bulk polymer
samples, with the focus on physical processes occurring close to the damage threshold. In-situ
real-time reflectivity (RTR) measurements with picosecond (ps) and nanosecond (ns) temporal
resolution were performed on thin polymer films on a timescale up to a few microseconds (µs).
A model for polymer thin film damage is presented, indicating that irreversible chemical
modification processes take place already below the fluence threshold for macroscopic damage.
On dye-doped bulk polymer filters (as used for laser goggles), transmission studies using fs-and
ps-laser pulses reveal the optical saturation behavior of the material and its relation to the
threshold of permanent damage. Implications of the sub-threshold processes for laser safety
applications will be discussed for thin film and bulk polymer damage.
Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area.
Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences.
Multiple pulse investigations of 130-fs Ti:sapphire laser-induced damage of a high reflecting mirror consisting of alternating ?/4-layers of Ta2O5 and SiO2 and a single 500-nm Ta2O5 film were performed. In both cases, fused silica served as the substrate. For a fixed number of 1000 laser pulses per spot, a decrease in the damage threshold fluence of the mirror by a factor of two was observed by changing the repetition rate from 10 Hz to 1 kHz. A single 500-nm Ta2O5 film shows higher damage resistance compared to the mirror. The mirror and the Ta2O5 film samples were partially coated with a 300-nm-thick aluminium layer. The aluminium coating does not influence the damage threshold of the dielectrics underneath.
The dynamics of the formation of laser-induced periodic surface structures (LIPSS) on fused silica upon irradiation with linearly polarized fs-laser pulses (50 fs pulse duration) is studied by cross-polarized two-color double-fs-pulse experiments. In order to analyze the relevance of temporally distributed energy deposition in the early stage of LIPSS formation, a Mach-Zehnder interferometer was used for generating multiple double-pulse sequences at two different wavelengths (400 and 800 nm). The inter-pulse delay between the individual cross-polarized pulses of each sequence was systematically varied in the sub-ps range and the resulting LIPSS morphologies were characterized by scanning electron microscopy. It is found that the polarization of the first laser pulse arriving to the surface determines the orientation and the periodicity of the LIPSS. These two-color experiments further confirm the importance of the ultrafast energy deposition to the silica surface for LIPSS formation, particularly by the first laser pulse of each sequence. The second laser pulse subsequently reinforces the previously seeded spatial LIPSS characteristics (period, orientation).
Laser-induced periodic surface structures (LIPSS, ripples) were processed on steel (X30CrMoN15-1) and titanium (Ti) surfaces by irradiation in air with linear polarized femtosecond laser pulses with a pulse duration of 30 fs at 790 nm wavelength. For the processing of large LIPSS covered surface areas (5 mm × 5 mm), the laser fluence and the spatial spot overlap were optimized in a sample-scanning geometry. The laser-processed surfaces were characterized by optical microscopy (OM), white light interference microscopy (WLIM) and scanning electron microscopy (SEM). Spatial LIPSS periods between 450 and 600 nm were determined. The nanostructured surface regions were tribologically tested under reciprocal sliding conditions against a 10-mm diameter ball of hardened 100Cr6 steel. Paraffin oil and engine oil were used as lubricants for 1000 sliding cycles at 1 Hz with a normal load of 1.0 N. The corresponding wear tracks were analyzed by OM and SEM. In particular cases, the laser-generated nanostructures endured the tribological treatment. Simultaneously, a significant reduction of the friction coefficient and the wear was observed in the laser-irradiated (LIPSS-covered) areas when compared to the non-irradiated surface. The experiments reveal the potential benefit of laser surface structuring for tribological applications.
Laser-induced periodic surface structures (LIPSS) were generated on two types of steel (100Cr6, X30CrMoN15-1) and two types of titanium (Ti, Ti6A14V) surfaces upon irradiation with multiple linear polarized femtosecond laser pulses in air environment (pulse duration 30 fs, central wavelength 790 nm, pulse repetition rate 1 kHz, Gaussian beam shape). Teh conditions (laser fluence, spatial spot overlap) were optimized in a sample-scanning geometry for the processing of large surface areas covered homogeneously by two different types of LIPSS - either near wavelength or sub-100 nm structures. The tribological performance of the nanostructured surfaces was characterized under reciprocating sliding at 1 Hz against a ball of hardened steel using different lubricants and normal forces. After 1000 cycles the corresponding wear tracks were characterized by optical and scanning electron microscopy. For specific conditions, the wear was strongly reduced and laser-generated nanostructures endured the tribological treatment. Simultaneously, a significant reduction of the friction coefficient was observed in the laser-irradiated LIPSS-covered areas, indicating the benefit of laser surface structuring for tribological applications. The spatially Gaussian shaped beam used for the laser processing was transformed via beam shaping into a top hat distribution at the surface of the samples for optimization. The tribological performance of the laser-induced nanostructures is discussed on the basis of different physical and chemical mechanisms.
The formation of laser-induced periodic surface structures (LIPSS) on different materials (silicon, fused silica, quartz) with linearly polarized fs-laser irradiation is studied experimentally. In dielectrics, the importance of transient excitation stages in the LIPSS formation is demonstrated by using (multiple) cross-polarized double-fs-laser-pulse irradiation sequences. A characteristic decrease of the spatial LIPSS periods is observed for double-pulse delays of less than 2 ps along with a characteristic 90°-rotation of the LIPSS orientation.
Femtosecond diffraction dynamics of laser-induced periodic surface structures on fused silica
(2013)
The formation of laser-induced periodic surface structures (LIPSS) on fused silica upon irradiation with linearly polarized fs-laser pulses (50 fs pulse duration, 800?nm center wavelength) is studied experimentally using a transillumination femtosecond time-resolved (0.1 ps-1 ns) pump-probe diffraction approach. This allows to reveal the generation dynamics of near-wavelength-sized LIPSS showing a transient diffraction at specific spatial frequencies even before a corresponding permanent surface relief was observed. The results confirm that the ultrafast energy deposition to the materials surface plays a key role and triggers subsequent physical mechanisms such as carrier scattering into self-trapped excitons.