Filtern
Erscheinungsjahr
Dokumenttyp
- Vortrag (31)
- Beitrag zu einem Tagungsband (20)
- Zeitschriftenartikel (14)
- Buchkapitel (10)
- Posterpräsentation (7)
- Beitrag zu einem Sammelband (4)
- Monografie (1)
- Video (1)
Sprache
- Englisch (88) (entfernen)
Referierte Publikation
- nein (88) (entfernen)
Schlagworte
- Laser-induced periodic surface structures (LIPSS) (35)
- Surface functionalization (21)
- Femtosecond laser (17)
- Femtosecond laser ablation (14)
- Laser processing (13)
- Applications (9)
- Laser-induced periodic surface structures, LIPSS (9)
- Laser ablation (7)
- Microstructures (6)
- Nanostructures (6)
- Friction (5)
- Oxidation (5)
- Tribology (5)
- Wear (5)
- Ablation (4)
- Electromagnetic scattering (4)
- Capillary waves (3)
- Femtosecond laser processing (3)
- Hard X-ray photoelectron spectroscopy (HAXPES) (3)
- Laser-induced X-ray emission (3)
- Ultrafast laser processing (3)
- Wetting (3)
- Atomic force microscopy (2)
- Chalcopyrite (2)
- Cu(InGa)Se2 (2)
- Damage threshold (2)
- Dielectrics (2)
- Doping (2)
- Femtosecond (2)
- Free electron laser (2)
- Incubation (2)
- Indium phosphide (2)
- Industrial applications (2)
- LIPSS (2)
- Laser-induced periodic surface structures (2)
- Light concentration (2)
- Micro solar cells (2)
- Nanosecond laser ablation (2)
- Radiation protection (2)
- Selective emitter (2)
- Silicon (2)
- Steel (2)
- Ti6Al4V alloy (2)
- Time-of-flight secondary ion mass spectrometry (ToF-SIMS) (2)
- Time-resolved scattering (2)
- Titanium alloy (2)
- 100Cr6 (1)
- 532 nm wavelength (1)
- Absorber optimization (1)
- Additives (1)
- Anodization (1)
- Antiadhesive surfaces (1)
- Antimicrobial (1)
- Auger electron spectroscopy (1)
- Bacteria (1)
- Bacteria-repellent surfaces (1)
- Bacterial adhesion tests (1)
- Biofilm growth (1)
- Biofilms (1)
- Bone screws (1)
- CIGS (1)
- Carrier excitation (1)
- Carrier plasmas (1)
- Cell adhesion (1)
- Cell-repellent surfaces (1)
- Chemical analyses (1)
- Chemical analysis (1)
- Copper indium gallium diselenide (CIGSe) (1)
- Cribellate spiders (1)
- CuInSe2 (1)
- Double-pulse (1)
- Electrical properties (1)
- Electrochemical treatment (1)
- Electromagnetic radiation (1)
- Femtosecond laser irradiation (1)
- Femtosecond laser-processing (1)
- Femtosecond pulse laser (1)
- Finite-difference time-domain calculations (1)
- Fluid transport (1)
- Force distance curve (1)
- Free electron laser (FEL) (1)
- Glasses (1)
- Glow-discharge optical emission spectroscopy (1)
- Hydrodynamics (1)
- Implant material (1)
- Interferometer (1)
- Ionic liquid (1)
- Isotopes (1)
- LIFT (1)
- Laser induced periodic surface structures (LIPSS) (1)
- Laser material processing (1)
- Laser materials processing (1)
- Laser nanostructuring (1)
- Laser scribing (1)
- Laser technology (1)
- Laser-induced amorphization (1)
- Laser-induced forward transfer (LIFT) (1)
- Laser-induced micro- and nanostructures (1)
- Laser-induced periodic surface strcutures (LIPSS) (1)
- Laser-induced periodic surface strcutures, LIPSS (1)
- Lizard (1)
- Lizards (1)
- Lubrication (1)
- Matter reorganization (1)
- Medical implants (1)
- Metals (1)
- Micro solar cell (1)
- Micromachining (1)
- Microstructure (1)
- Modelling (1)
- Molybdenum (1)
- Multicrystalline silicon (1)
- Multiphoton absorption (1)
- Nanometrology (1)
- Nanosecond pulses (1)
- Nanostrcutures (1)
- Native oxide layer (1)
- Nonlinear lithography (1)
- Optical properties (1)
- Optical scattering (1)
- Optics at surfaces (1)
- PAG (1)
- Pacemaker (1)
- Polymer (1)
- Pulse shaping (1)
- Pump-probe (1)
- Pump-probe experiments (1)
- Quantitative phase-contrast microscopy (1)
- Reactive oxygen species (1)
- Refractive index engineering (1)
- Ripples (1)
- Scanning electron microscopy (1)
- Scanning/atomic force microscopy (SFM/AFM) (1)
- Second harmonic generation (SHG) (1)
- Secondary hazard (1)
- Self-organization (1)
- Semiconductor (1)
- Semiconductors (1)
- Silicon solar cell (1)
- Simulation (1)
- Spatial light interference microscopy (1)
- Spectroscopic imaging ellipsometry (1)
- Sputter deposition (1)
- Stiffness (1)
- Strain (1)
- Surface engineering (1)
- Surface plasmon polaritons (1)
- Surface structures (1)
- TeO2 (1)
- Tellurium dioxide crystals (1)
- Theoretical modelling (1)
- Thin-film solar cells (1)
- TiAl64V (1)
- Time-of-flight mass spectrometry (TOF-MS) (1)
- Time-of-flight mass spectroscopy (1)
- Time-offlight secondary ion mass spectrometry (ToF-SIMS) (1)
- Time-resolved analysis (1)
- Time-resolved coherent XUV scattering (1)
- Time-resolved coherent scattering (1)
- Titanium (1)
- Titanium alloys (1)
- Titanium nitride (1)
- ToF-SIMS (1)
- Transmission electron microscopy (1)
- Ultra-short pulse laser processing (1)
- Ultrafast laser excitation (1)
- Ultrafast phenomena (1)
- Ultrafast scattering (1)
- Ultrashort (1)
- Ultrashort laser material interaction (1)
- Ultrashort laser processing (1)
- Ultrashort laser pulses (1)
- Ultrashort pulse laser processing (1)
- VUV nanosecond laser ablation (1)
- X-ray (1)
- XUV scattering (1)
- a-Si/my-Si (1)
Organisationseinheit der BAM
- 6 Materialchemie (53)
- 6.2 Material- und Oberflächentechnologien (53)
- 9 Komponentensicherheit (10)
- 9.5 Tribologie und Verschleißschutz (10)
- 6.1 Oberflächen- und Dünnschichtanalyse (8)
- 4 Material und Umwelt (4)
- 4.1 Biologische Materialschädigung und Referenzorganismen (4)
- 6.6 Physik und chemische Analytik der Polymere (1)
Paper des Monats
- ja (1)
Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold.
Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area.
Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences.
Laser ablation of single-crystalline indium phosphide (InP) was performed in air by means of linearly polarized Ti:sapphire femtosecond-pulses (800 nm, 130 fs, 10 Hz). As a result of the first laser pulses, several morphological changes (crater formation, rim formation, ripple structures and cones) were observed. These effects were explored using force modulation microscopy (FMM), a technique based on scanning force microscopy (SFM), allowing the simultaneous imaging of both topography and local stiffness at a high lateral resolution. The first laser pulse induces the formation of a protruding rim (height <20 nm, width ~300 nm) bordering the ablated crater. A Fourier-analysis of the multi-pulse generated topographies reveals the formation of wavelength-sized periodic ripples (modulation depth <100 nm) with an orientation perpendicular to that of the electric field vector of the laser radiation. Besides these morphological alterations, also material modifications were observed in the irradiated regions by means of the FFM technique. Within the ablated craters, local stiffness variations were found revealing an inhomogeneous material composition/structure as a consequence of the femtosecond pulse laser treatment.
Physical and chemical phenomena resulting from irradiation of silicon and indium phosphide with ultrashort laser pulses (~100fs) were investigated
with respect to the difference between single- and multiple-pulse treatment. In the single-pulse case, several processes were identified: modification,
recrystallization and ablation. All processes exhibit a distinct treshold behaviour. A two photon-absorption coefficient can be determined from a single
spatial ablation profile. Accumulation effects were observed for multi-pulse illumination. Different morphological features like bubbles, rippels and
microcolumns were found.
Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed.
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold.
Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production.
Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 nm, repetition
rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm,
repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2 ) surfaces
was performed in air using the direct focusing technique. A multi-method
characterization using optical microscopy, atomic force microscopy and scanning
electron microscopy revealed the surface morphology of the ablated craters. This allowed
us at each irradiation site to characterize precisely the lateral and vertical dimensions of
the laser-ablated craters for different laser pulse energies and number of laser pulses per
spot. Based on the obtained information, we quantitatively determined the ablation
threshold fluence for the fs laser irradiation when different pulse numbers were applied to
the same spot using two independent extrapolation techniques. We found that in the case
of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the
number of laser pulses applied to the same spot indicating that incubation effects play an
important role in this material. In the case of VUV ns laser pulses, the ablation rate is
significantly higher due to the high photon energy and the predominantly linear
absorption in the material. These results are discussed on the basis of recent models of the
interaction of laser pulses with dielectrics. In the second part of this chapter, we use time-
of-flight mass spectrometry (TOFMS) to analyze the elemental composition of the
ablation products generated upon laser irradiation of c-TeO2 with single fs- (pulse
duration ~200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength
355 nm). Due to the three order of magnitude different peak intensities of the ns- and fs
laser pulses, significant differences were observed regarding the laser-induced species in
the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in
the form of many different isotopes were observed in case of both irradiations. In the case
of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and
there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te
ion signals strongly depends on the applied laser pulse energy. Singly charged oxygen
ions (O+) are always present as a byproduct in both kinds of laser ablation.
Near-IR femtosecond ( τ = 150 fs, λ = 775 nm, repetition rate 1 kHz) and VUV nanosecond (τ = 20 ns, λ = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2, grown by the balance controlled Czochalski growth method) surfaces was performed in air using the direct focusing technique. The multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and pulse numbers at each spot. Based on the obtained information, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot by using two independent extrapolation techniques. We found that in case of NIR femtosecond laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics.
Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved.
Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 um, Repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO? (c-Te02) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the Ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use timeof-flight mass spectrometry (TOFMS) to analyze the elemental composltion of the ablation products generated upon laser irradiation of c-Te02 with single fs- (pulse duration ~ 200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three Order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion Signals strongly depends on the applied laser pulse energy. Singly charged Oxygen ions (0+) are always present as a byproduct in both kinds of laser ablation.
This 6 minute long MP4-video presents some key results of the European research project "BioCombs4Nanofibers" to the broader public. Inspired by nature, some concepts of certain types of spiders are transferred to technology in order to develop bacteria-repellent surfaces through laser surface nanostructuring.
Funding notice: This study was funded by the European Union's research and innovation program under the FET Open grant agreement No. 862016 (BioCombs4Nanofibers, http://biocombs4nanofibers.eu).
The processing of laser-induced periodic surface structures (LIPSS) represents a simple and robust way for the nanostructuring of solids that allows creating a wide range of surface functionalities featuring applications in optics, tribology, medicine, energy technologies, etc. While the currently available laser and scanner technology already allows surface processing rates at the m2/min level, industrial applications of LIPSS are sometimes hampered by the complex interplay between the nanoscale surface topography and the specific surface chemistry. This typically manifests in difficulties to control the processing of LIPSS and in limitations to ensure the long-term stability of the created surface functions. This presentation aims to identify some unsolved scientific problems related to LIPSS, discusses the pending technological limitations, and sketches the current state of theoretical modelling. Hereby, it is intended to stimulate further research and developments in the field of LIPSS for overcoming these limitations and for supporting the transfer of the LIPSS technology into industry.
Due to its large strength-to-weight ratio and excellent biocompatibility, titanium materials are of paramount importance for medical applications, e.g. as implant material for protheses. In this work, the evolution of various types of laser-induced micro- and nanostructures emerging on titanium or titanium alloys upon irradiation by near-infrared ultrashort laser pulses (925 fs, 1030 nm) in air environment is studied for various laser fluence levels, effective number of pulses and at different pulse repetition rates (1 – 400 kHz). The morphologies of the processed surfaces were systematically characterized by optical and scanning electron microscopy (OM, SEM). Complementary white-light interference microscopy (WLIM) revealed the corresponding surface topographies. Chemical and structural changes were analysed through depth-profiling time-of-flight secondary ion mass spectrometry (TOF-SIMS) and X-ray diffraction (XRD) analyses. The results point towards a remarkable influence of the laser processing parameters on the surface topography, while simultaneously altering the near-surface chemistry via laser-induced oxidation effects. Consequences for medical applications are outlined.
Laser-Induced Periodic Surface Structures (LIPSS, ripples) are a universal phenomenon and can be generated in a contactless, single-step process on almost any material upon irradiation of solids with intense laser radiation. Nowadays, processing rates of up to m^2/min are enabling new industrial applications in medicine, optics, tribology, biology, etc. Depending on the specific type of LIPSS, their structural sizes typically range from several micrometers down to less than 100 nanometers – far beyond the optical diffraction limit – while their orientations exhibit a clear correlation with the local polarization direction of the laser radiation. From a theoretical point of view, however, a controversial and vivid debate has emerged during the last two decades, whether LIPSS originate from electromagnetic effects (seeded already during the laser irradiation) – or whether they emerge from matter reorganization processes, i.e. distinctly after the laser irradiation. This presentation reviews the currently existent theories of LIPSS. A focus is laid on the historic development of the fundamental ideas, their corresponding mathematical descriptions and numerical implementations, along with a comparison and critical assessment of the different approaches.
Ultrashort pulse laser materials processing can be accompanied by the production of X-rays. Small doses per laser pulse can accumulate to significant dose rates at high laser pulse repetition rates which may exceed the permitted X-ray limits for human exposure. Consequently, a proper radiation shielding must be considered in laser machining. A brief overview of the current state of the art in the field of undesired generation of X-ray radiation during ultrashort pulse laser material processing in air is presented.