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- Beitrag zu einem Tagungsband (29) (entfernen)
Schlagworte
- Femtosecond laser ablation (7)
- Laser processing (7)
- Laser-induced periodic surface structures (LIPSS) (6)
- Surface functionalization (4)
- Ablation (3)
- Laser-induced X-ray emission (3)
- Applications (2)
- Cu(InGa)Se2 (2)
- Doping (2)
- Laser ablation (2)
- Micro solar cell (2)
- Radiation protection (2)
- Selective emitter (2)
- Silicon (2)
- 100Cr6 (1)
- Application (1)
- Atomic force microscopy (1)
- Bacteria (1)
- Biofilms (1)
- CIGS (1)
- Chalcopyrite (1)
- Chalkopyrite (1)
- Coefficient of thermal expansion (1)
- Coherent scattering (1)
- Copper indium gallium diselenide (CIGSe) (1)
- Cu(In,Ga)Se2 (1)
- Dielectrics (1)
- Dünnschichtsolarzellen (1)
- Electrical properties (1)
- Femtosecond laser (1)
- Femtosecond laser irradiation (1)
- Femtosecond laser modifications (1)
- Femtosecond phenomena (1)
- Finite-difference time-domain calculations (1)
- Force distance curve (1)
- Free electron lasers (1)
- Friction (1)
- Fs-laser patterning (1)
- Glass (1)
- Glass transformation temperature (1)
- Incubation (1)
- Indium phosphide (1)
- Ionic liquid (1)
- LIPSS (1)
- Laser damage (1)
- Laser induced periodic surface structures (LIPSS) (1)
- Laser irradiation (1)
- Laser material processing (1)
- Laser materials processing (1)
- Laser safety (1)
- Laser-induced damage threshold (1)
- Laser-induced forward transfer (1)
- Laser-induced forward transfer (LIFT) (1)
- Laser-induced periodic surface strcutures (LIPSS) (1)
- Laser-induced periodic surface structures (1)
- Lasers (1)
- Laserstrukturierung (1)
- Lubrication (1)
- Micro raman spectroscopy (1)
- Microscopy (1)
- Microstructure (1)
- Molybdenum (1)
- Multicrystalline silicon (1)
- Nanometrology (1)
- Nanosecond pulses (1)
- Networks (1)
- Nonlinear refractive index (1)
- Optical components (1)
- Optical storage (1)
- Optics at surfaces (1)
- PAG (1)
- Photovoltaik (1)
- Polymer (1)
- Quantitative phase-contrast microscopy (1)
- Raman spectroscopy (1)
- Scanning/atomic force microscopy (SFM/AFM) (1)
- Second harmonic generation (SHG) (1)
- Secondary hazard (1)
- Semiconductor (1)
- Semiconductors (1)
- Silica (1)
- Silicate glass systems (1)
- Silicon solar cell (1)
- Simulation (1)
- Spatial light interference microscopy (1)
- Sputter deposition (1)
- Stiffness (1)
- Strain (1)
- Surface oxidation (1)
- Surface plasmon polaritons (1)
- TiAl64V (1)
- Time-resolved coherent XUV scattering (1)
- Time-resolved reflectivity measurements (1)
- Tribology (1)
- Ultra-short pulse laser processing (1)
- Ultrafast phenomena (1)
- Ultrashort laser material interaction (1)
- Ultrashort laser pulses (1)
- Ultrashort pulse laser processing (1)
- Wear (1)
- Wetting (1)
- a-Si/my-Si (1)
Organisationseinheit der BAM
A promising technology in photovoltaics is based on micro-concentrator solar cells, where the photovoltaic active area is realized as an array of sub-millimeter sized cells onto which the incident light is focused via microlenses. This approach allows to increase the cell efficiency and to realize much more compact modules compared to macroscopic concentrator devices. At the same time, expensive raw materials can be saved, which is of interest, for example, with respect to indium in the case of copper-indium-gallium-diselenide (CIGSe) thin film solar cells. Two methods to produce micro-sized precursors of CIGSe absorbers on molybdenum are presented using 30-fs laser pulses at 790 nm wavelength. On the one hand, a multi pulse surface structuring of the molybdenum film or the underlying glass substrate and a subsequent physical vapor deposition were used for a site-selective aggregation of indium droplets. On the other hand, a single pulse laser-induced forward transfer was utilized to selectively deposit combined copper-indium precursor pixels on the molybdenum back contact of the solar cell. Post-processing (selenization, isolation, contacting) of the laser-generated micro-sized precursors results in functional CIGSe solar cells.
The performance of titanium alloy (Ti6Al4V) surfaces was investigated in lubricated reciprocating sliding tribological tests (RSTT). Special emphasis was laid on the effect of surface nanostructures in area of contact on the respective friction and wear behaviour. These so-called laser-induced periodic surface structures (LIPSS, ripples) were produced on the titanium alloy surface upon scan processing in air by an ultrashort pulsed femtosecond (fs) laser. As lubricant served two types of base oils, a pure polyalcylene-glycol, and an SAE 0W30 oil containing only antioxidants and temperature stabilizers. Tribological tests were carried out on polished as well as LIPSS covered areas using both types of base oil. A test metrics was established, combining the additive 2-ethylhexyl-zincdithiophosphate (ZDDP) or the ionic liquid [P6,6,6,14] [DEHP] (98% purity) with the respective base oils. The test metrics also considered the orientation of motion with respect to the orientation of the structures formed on the surface. Results are presented which show that the interplay between LIPSS and the local chemistry formed by the respective additives is beneficial for the tribological behaviour of the titanium alloy. Certain combinations of base oil, additive and LIPSS reduced friction and wear significantly in the tribological contact.
The current state in the field of laser-induced periodic surface structures (LIPSS, ripples) is reviewed. Their formation mechanisms are analyzed in ultrafast experiments (time-resolved diffraction and polarization controlled double-pulse experiments) and technological applications are demonstrated.
In this contribution the mechanisms of formation and current applications of LIPSS are reviewed, including the colorization of technical surfaces, the control of surface wetting properties, the mimicry of the natural texture of animal integuments, the tailoring of surface colonization by bacterial biofilms, and the improvement of the tribological performance of nanostructured metal surfaces.
Laser-induced periodic surface structures (LIPSS, ripples) are a universal phenomenon that can be observed on almost any material after the irradiation by linearly polarized laser beams, particularly when using ultrashort laser pulses with durations in the picosecond to femtosecond range. During the past few years significantly increasing research activities have been reported in the field of LIPSS, since their generation in a single-step process provides a simple way of nanostructuring and surface functionalization towards the control of optical, mechanical or chemical properties. In this contribution current applications of LIPSS are reviewed, including the colorization of technical surfaces, the control of surface wetting, the tailoring of surface colonization by bacterial biofilms, and the improvement of the tribological performance of nanostructured metal surfaces.
Laser ablation of single-crystalline indium phosphide (InP) was performed in air by means of linearly polarized Ti:sapphire femtosecond-pulses (800 nm, 130 fs, 10 Hz). As a result of the first laser pulses, several morphological changes (crater formation, rim formation, ripple structures and cones) were observed. These effects were explored using force modulation microscopy (FMM), a technique based on scanning force microscopy (SFM), allowing the simultaneous imaging of both topography and local stiffness at a high lateral resolution. The first laser pulse induces the formation of a protruding rim (height <20 nm, width ~300 nm) bordering the ablated crater. A Fourier-analysis of the multi-pulse generated topographies reveals the formation of wavelength-sized periodic ripples (modulation depth <100 nm) with an orientation perpendicular to that of the electric field vector of the laser radiation. Besides these morphological alterations, also material modifications were observed in the irradiated regions by means of the FFM technique. Within the ablated craters, local stiffness variations were found revealing an inhomogeneous material composition/structure as a consequence of the femtosecond pulse laser treatment.
The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of semiconductors and dielectrics by linearly polarized high-intensity Ti:sapphire fs-laser pulses (τ ~100 fs, λ ~800 nm) is studied experimentally and theoretically. In the experiments, two different types of LIPSS exhibiting very different spatial periods are observed (socalled LSFL low spatial frequency LIPSS, and HSFL - high spatial frequency LIPSS), both having a different dependence on the incident laser fluence and pulse number per spot. The experimental results are analyzed by means of a new theoretical approach, which combines the generally accepted LIPSS theory of J. E. Sipe and co-workers [Phys. Rev. B 27, 1141-1154 (1983)] with a Drude model, in order to account for transient changes of the optical properties of the irradiated materials. The joint Sipe-Drude model is capable of explaining numerous aspects of fs-LIPSS formation, i.e., the orientation of the LIPSS, their fluence dependence as well as their spatial periods. The latter aspect is specifically demonstrated for silicon crystals, which show experimental LSFL periods Λ somewhat smaller than λ. This behaviour is caused by the excitation of surface plasmon polaritons, SPP, (once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material) and the subsequent interference between its electrical fields with that of the incident laser beam, resulting in a spatially modulated energy deposition at the surface.
Upon multi-pulse irradiation, a feedback mechanism, caused by the redshift of the resonance in a grating-assisted SPP excitation, is further reducing the LSFL spatial periods. The SPP-based mechanism of LSFL successfully explains the remarkably large range of LSFL periods between ~0.6 λ and λ.
This contribution investigates laser-induced damage of thin film and bulk polymer
samples, with the focus on physical processes occurring close to the damage threshold. In-situ
real-time reflectivity (RTR) measurements with picosecond (ps) and nanosecond (ns) temporal
resolution were performed on thin polymer films on a timescale up to a few microseconds (µs).
A model for polymer thin film damage is presented, indicating that irreversible chemical
modification processes take place already below the fluence threshold for macroscopic damage.
On dye-doped bulk polymer filters (as used for laser goggles), transmission studies using fs-and
ps-laser pulses reveal the optical saturation behavior of the material and its relation to the
threshold of permanent damage. Implications of the sub-threshold processes for laser safety
applications will be discussed for thin film and bulk polymer damage.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
Micro- and nanostructuring with laser-induced periodic surface structures (LIPSS) has been demonstrated to be feasible in a wide variety of materials including metals, semiconductors and dielectrics. Suitable processing regimes for flat, curved and complex surfaces have been identified for many materials, allowing the generation of diverse applications in fields such as optics, tribology and medicine, to name a few. A common side effect when producing such structures in air environment is the formation of a thin surface oxide layer in the laser irradiated areas. Previous studies have shown that oxidation plays an important role in the tribological performance for which the structures where created, and very recently it has been shown that the laser-induced oxide graded layers may contribute to the formation of a new type of embedded low-spatial frequency LIPSS (LSFL) with annomalous orientation parallel to the laser polarization, in addition to the appearance of the well-known high-spatial frequency LIPSS (HSFL) at the surface. In this contribution, we explore this effect experimentally for chromium nitride (CrN) irradiated with femtosecond laser pulses and compare the findings to finite-difference time-domain (FDTD) simulations of the intensity distributions at different depth positions.
In recent years, the improved understanding of the formation of laser-induced periodic surface structures (LIPSS) has led to an emerging variety of applications that modify the optical, mechanical and chemical properties of many materials. Such structures strongly depend on the laser beam polarization and are formed usually after irradiation with ultrashort linearly polarized laser pulses. The most accepted explanation for the origin of the structures is based on the interference of the incident laser radiation with electromagnetic surface waves that propagate or scatter at the surface of the irradiated materials. This leads to an intensity modulation that is finally responsible for the selective ablation in the form of parallel structures with periods ranging from hundreds of nanometers up to some micrometers. The versatility when forming such structures is based on the high reproducibility with different wavelength, pulse duration and repetition rate laser sources, customized micro- and nanometric spatial resolutions, and the compatibility with industrially relevant processing speeds when combined with fast scanning devices. In this contribution, we review the latest applications in the rapidly emerging field of surface functionalization through LIPSS, including biomimetic functionalities on fluid transport, control of the wetting properties, specific optical responses in technical materials, improvement of tribological performance on metallic surfaces and bacterial and cell growth for medical devices, among many others.
Laser-induced periodic surface structures (LIPSS, ripples) are a universal phenomenon that can be observed on almost any material after the irradiation by linearly polarized laser beams, particularly when using ultrashort laser pulses with durations in the femtosecond to picosecond range. During the past years significantly increasing industrial and research activities have been reported in the field of LIPSS, since their generation in a single-step process provides a simple way of nanostructuring and surface functionalization towards the control of optical, mechanical or chemical surface properties. In this contribution the mechanisms of formation and current trends and applications of LIPSS are reviewed, including the colorization of technical surfaces, the control of surface wetting properties, the mimicry of the natural texture of animals, the tailoring of surface colonization by bacterial biofilms, the advancement of leadless medical pacemakers, and the improvement of the tribological performance of nanostructured metal surfaces.
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.
Some nonlinear optical properties such as the nonlinear refractive index and the nonlinear effective absorption, as well as the laser-induced single-pulse ablation threshold are characterized for a series of binary and ternary silicate glasses upon irradiation with near-infrared femtosecond laser pulses (800 nm, 130 fs). The laser-induced ablation threshold varies from 2.3 J/cm² in case of potassium silicate glass up to 4.3 J/cm² in case of Fused Silica. Nonlinear refractive indices are qualitatively similar within the range 1.7-2.7×10-16 cm²/W. Complementary optical and physico-chemical properties like band gap energy and the glass transformation temperature have been measured for all the glasses.
Unwanted X-ray emission in ultrashort pulse laser processing: From metallic to biological materials
(2023)
X-rays can be generated as an unwanted side effect during ultrashort pulse laser material processing of technical work pieces and even biological samples with laser intensities above 10^13 W/cm^2. First studies demonstrate the need to address this effect in industrial as well as in medical applications. This secondary hazard should be considered in work safety and risk assessment.
Ultrashort pulse laser materials processing can be accompanied by the production of X-rays. Small doses per laser pulse can accumulate to significant dose rates at high laser pulse repetition rates which may exceed the permitted X-ray limits for human exposure. Consequently, a proper radiation shielding must be considered in laser machining. A brief overview of the current state of the art in the field of undesired generation of X-ray radiation during ultrashort pulse laser material processing in air is presented.
The industrial use of ultrashort laser pulses has made considerable progress in recent years. The reasons for this lie in the availability of high average powers at pulse repetition rates in the several 100 kHz range. The advantages of using ultrashort laser pulses in terms of processing precision can thus be fully exploited. However, high laser intensities on the workpiece can also lead to the generation of unwanted X-rays. Even if the emitted X-ray dose per pulse is low, the accumulated X-ray dose can become significant for high-repetition-rate laser systems so that X-ray exposure safety limits must be considered. The X-ray emission during ultrashort pulse laser processing was investigated for a pulse duration of 925 fs at 1030 nm wavelength and 400 kHz repetition rate. Industrially relevant materials such as steel,aluminum and glass were treated. Tungsten served as reference. X-ray spectra were recorded, and X-ray dose measurements were performed for laser treatment in air. For laser intensities > 2 × 10^13 W/cm2, X-ray doses exceeding the regulatory exposure limits for members of the public were found. Suitable X-ray protection strategies are proposed.
Ultrashort pulses lasers are tools of choice for functionalizing the bulk of transparent materials. In particular, direct photoinscription of simple photonic functions have been demonstrated. Those elementary functions rely on the local refractive index change induced when focusing an ultrashort pulse in the volume of a transparent material. The range of possibilities offered by direct photoinscription is still under investigation. To help understanding, optimizing and assessing the full potential of this method, we developed a time-resolved phase contrast microscopy setup. The imaginary part (absorption) and the real part of the laser-induced complex refractive index can be visualized in the irradiated region. The setup is based on a commercially available phase contrast microscope extended into a pump-probe scheme. The originality of our approach is that the illumination is performed by using a pulsed laser source (i.e. a probe beam). Speckle-related issues are solved by employing adequate sets of diffusers. This laser-microscopy technique has a spatial resolution of 650 nm, and the impulse response is about 300 fs. The laser-induced refractive index changes can be tracked up to milliseconds after the energy deposition. The excitation beam (the pump) is focused with a microscope objective (numerical aperture of 0.45) into the bulk of an a-SiO2 sample. The pump beam can be temporally shaped with a SLM-based pulse shaping unit. This additional degree of flexibility allows for observing different interaction regimes. For instance, bulk material processing with femtosecond and picosecond duration pulses will be studied.
Over the past years, many applications based on laser-induced refractive index changes in the volume of transparent materials have been demonstrated. Ultrashort pulse lasers offer the possibility to process bulky transparent materials in three dimensions, suggesting that direct laser writing will play a decisive role in the development of integrated micro-optics. At the present time, applications such as 3D long term data storage or embedded laser marking are already into the phase of industrial development. However, a quantitative estimate of the laser-induced refractive index change is still very challenging to obtain. On another hand, several microscopy techniques have been recently developed to characterize bulk refractive index changes in-situ. They have been mostly applied to biological purposes. Among those, spatial light interference microscopy (SLIM), offers a very good robustness with minimal post acquisition data processing. In this paper, we report on using SLIM to measure fs-laser induced refractive index changes in different common glassy materials, such as fused silica and borofloat glass (B33). The advantages of SLIM over classical phase-contrast microscopy are discussed.
Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold.