Filtern
Erscheinungsjahr
Dokumenttyp
- Zeitschriftenartikel (88)
- Vortrag (48)
- Posterpräsentation (27)
- Beitrag zu einem Tagungsband (22)
- Buchkapitel (5)
- Beitrag zu einem Sammelband (4)
Schlagworte
- Femtosecond laser ablation (36)
- Laser-induced periodic surface structures (LIPSS) (28)
- Femtosecond laser (22)
- Surface functionalization (15)
- Laser ablation (12)
- Laser processing (11)
- Silicon (10)
- Friction (7)
- Laser-induced periodic surface structures (7)
- Tribology (7)
Organisationseinheit der BAM
- 6 Materialschutz und Oberflächentechnik (108)
- 6.4 Technologien mit Nanowerkstoffen (108)
- 6.3 Makro-Tribologie und Verschleißschutz (23)
- 6.6 Nano-Tribologie und Nanostrukturierung von Oberflächen (4)
- 6.7 Oberflächenmodifizierung und -messtechnik (4)
- 6.1 Oberflächenanalytik und Grenzflächenchemie (3)
- 4 Material und Umwelt (2)
- 4.1 Biologische Materialschädigung und Referenzorganismen (2)
- 5 Werkstofftechnik (2)
- 5.1 Materialographie, Fraktographie und Alterung technischer Werkstoffe (1)
Ultrafast laser processing can be used to realize various morphological surface transformations, ranging from direct contour shaping to large-area-surface functionalization via the generation of “self-ordered” micro- and nanostructures as well as their hierarchical hybrids. Irradiation with high-intensity laser pulses excites materials into extreme conditions, which then return to equilibrium through these unique surface transformations. In combination with suitable top-down or bottom-up manufacturing strategies, such laser-tailored surface morphologies open up new avenues toward the control of optical, chemical, and mechanical surface properties, featuring various technical applications especially in the fields of photovoltaics, tribology, and medicine. This article reviews recent efforts in the fundamental understanding of the formation of laser-induced surface micro- and nanostructures and discusses some of their emerging capabilities.
Modeling of silicon surface topographies induced by single nanosecond laser pulse induced melt-flows
(2019)
Irradiation with a single nanosecond laser pulse in the melting regime can result in a characteristic change in the surface morphology of crystalline silicon. This has been verified experimentally in a variety of situations, where dimple-shaped surface topographies are produced. In this work, the dimple height, depth, and width are modeled following and extending in a more rigorous manner the approach of Wood and Giles [Phys. Rev. B 23, 2923–2942 (1981)] and that of Schwarz-Selinger and coworkers [Phys. Rev. B 64, 155323 (2001)], upon varying the laser irradiation parameters such as peak energy density, pulse duration, and wavelength. This is achieved with numerical simulations of one-dimensional heat flow as input to the analytical fluid-flow equations.
Single-pulse femtosecond laser-induced forward transfer (LIFT, 30 fs, 790 nm) is used to deposit micron-sized dots of copper and/or indium onto a molybdenum layer on glass. Such systems can serve as precursors for the bottom-up manufacturing of micro-concentrator solar cells based on copper-indium-gallium-diselenide. The influence of the thickness of the copper, indium and combined copper-indium donor layers on the quality of the transferred dots was qualified by scanning electron microscopy, energy-dispersive X-ray analysis, and optical microscopy. The potential for manufacturing of a spatial arrangement adapted to the geometry of micro-lens arrays needed for micro-concentrator solar cells is demonstrated.
A promising technology in photovoltaics is based on micro-concentrator solar cells, where the photovoltaic active area is realized as an array of sub-millimeter sized cells onto which the incident light is focused via microlenses. This approach allows to increase the cell efficiency and to realize much more compact modules compared to macroscopic concentrator devices. At the same time, expensive raw materials can be saved, which is of interest, for example, with respect to indium in the case of copper-indium-gallium-diselenide (CIGSe) thin film solar cells. Two methods to produce micro-sized precursors of CIGSe absorbers on molybdenum are presented using 30-fs laser pulses at 790 nm wavelength. On the one hand, a multi pulse surface structuring of the molybdenum film or the underlying glass substrate and a subsequent physical vapor deposition were used for a site-selective aggregation of indium droplets. On the other hand, a single pulse laser-induced forward transfer was utilized to selectively deposit combined copper-indium precursor pixels on the molybdenum back contact of the solar cell. Post-processing (selenization, isolation, contacting) of the laser-generated micro-sized precursors results in functional CIGSe solar cells.
Some applications of polymer films require the microstructuring of partly uneven substrates. This cannot be achieved by conventional photolithography, usually performed with ultraviolet short-pulse lasers (excimer, fourth harmonic Nd:YAG). When processing thermally sensitive or undoped polymers with low optical absorption, the use of femtosecond laser pulses can improve the ablation precision, also reducing the heat-affected zone. Therefore, a Ti:sapphire laser system was employed to perform ablation experiments on polyimide (PI). The irradiated areas were evaluated by means of optical and scanning electron microscopy. Highly oriented ripple structures, which are related to the polarization state of the laser pulses, were observed in the cavities. The relationship between the ablation threshold fluence and the number of laser pulses applied to the same spot is described in accordance with an incubation model.
Ablation experiments with ultrashort laser pulses (pulse duration 150 fs, wavelength 800 nm) on polymers (PC, PMMA) relevant for biomedical technology have been performed in air. The lateral and vertical machining precision was evaluated by optical, atomic force and scanning electron microscopy. The ablation threshold reaches values in the range of 0.52.5 J/cm2 and depends significantly on the number of laser pulses applied to the same spot. The hole diameters are influenced by the laser fluence and the number of laser pulses. The relation between the ablation threshold and the number of laser pulses applied to the same spot is described in accordance with an incubation model.
Single-pulse femtosecond (fs) (pulse duration ~200 fs, wavelength 398 nm) and nanosecond (ns) (pulse duration 4 ns, wavelength 355 nm) laser ablation have been applied in combination with time-of-flight mass spectrometer (TOFMS) to analyze the elemental composition of the plasma plume of single-crystalline telluria (c-TeO2, grown by the balance controlled Czochralski growth method). Due to the three-order difference of the peak intensities of the ns and fs-laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of their isotopes were observed in case of both irradiations. In case of the ns-laser ablation the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion signals strongly depended on the applied laser pulse energy. Singly charged oxygen ions (O+) are always present as a byproduct in both kinds of laser ablation.
Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 um, Repetition rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO? (c-Te02) surfaces was performed in air using the direct focusing technique. A multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us at each irradiation site to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and number of laser pulses per spot. Based on the obtained information, we quantitatively determined the Ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot using two independent extrapolation techniques. We found that in the case of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In the case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics. In the second part of this chapter, we use timeof-flight mass spectrometry (TOFMS) to analyze the elemental composltion of the ablation products generated upon laser irradiation of c-Te02 with single fs- (pulse duration ~ 200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength 355 nm). Due to the three Order of magnitude different peak intensities of the ns- and fs laser pulses, significant differences were observed regarding the laser-induced species in the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in the form of many different isotopes were observed in case of both irradiations. In the case of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te ion Signals strongly depends on the applied laser pulse energy. Singly charged Oxygen ions (0+) are always present as a byproduct in both kinds of laser ablation.
Near-IR femtosecond (fs) (pulse duration = 150 fs, wavelength = 775 nm, repetition
rate 1 kHz) and VUV nanosecond (ns) (pulse duration = 20 ns, wavelength = 157 nm,
repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2 ) surfaces
was performed in air using the direct focusing technique. A multi-method
characterization using optical microscopy, atomic force microscopy and scanning
electron microscopy revealed the surface morphology of the ablated craters. This allowed
us at each irradiation site to characterize precisely the lateral and vertical dimensions of
the laser-ablated craters for different laser pulse energies and number of laser pulses per
spot. Based on the obtained information, we quantitatively determined the ablation
threshold fluence for the fs laser irradiation when different pulse numbers were applied to
the same spot using two independent extrapolation techniques. We found that in the case
of NIR fs laser pulse irradiation, the ablation threshold significantly depends on the
number of laser pulses applied to the same spot indicating that incubation effects play an
important role in this material. In the case of VUV ns laser pulses, the ablation rate is
significantly higher due to the high photon energy and the predominantly linear
absorption in the material. These results are discussed on the basis of recent models of the
interaction of laser pulses with dielectrics. In the second part of this chapter, we use time-
of-flight mass spectrometry (TOFMS) to analyze the elemental composition of the
ablation products generated upon laser irradiation of c-TeO2 with single fs- (pulse
duration ~200 fs, wavelength 398 nm) and ns-pulses (pulse duration 4 ns, wavelength
355 nm). Due to the three order of magnitude different peak intensities of the ns- and fs
laser pulses, significant differences were observed regarding the laser-induced species in
the plasma plume. Positive singly, doubly and triply charged Te ions (Te+, Te2+, Te3+) in
the form of many different isotopes were observed in case of both irradiations. In the case
of the ns-laser ablation, the TeO+ formation was negligible compared to the fs case and
there was no Te trimer (Te3+) formation observed. It was found that the amplitude of Te
ion signals strongly depends on the applied laser pulse energy. Singly charged oxygen
ions (O+) are always present as a byproduct in both kinds of laser ablation.
Near-IR femtosecond ( τ = 150 fs, λ = 775 nm, repetition rate 1 kHz) and VUV nanosecond (τ = 20 ns, λ = 157 nm, repetition rate 1 to 5 Hz) laser pulse ablation of single-crystalline TeO2 (c-TeO2, grown by the balance controlled Czochalski growth method) surfaces was performed in air using the direct focusing technique. The multi-method characterization using optical microscopy, atomic force microscopy and scanning electron microscopy revealed the surface morphology of the ablated craters. This allowed us to characterize precisely the lateral and vertical dimensions of the laser-ablated craters for different laser pulse energies and pulse numbers at each spot. Based on the obtained information, we quantitatively determined the ablation threshold fluence for the fs laser irradiation when different pulse numbers were applied to the same spot by using two independent extrapolation techniques. We found that in case of NIR femtosecond laser pulse irradiation, the ablation threshold significantly depends on the number of laser pulses applied to the same spot indicating that incubation effects play an important role in this material. In case of VUV ns laser pulses, the ablation rate is significantly higher due to the high photon energy and the predominantly linear absorption in the material. These results are discussed on the basis of recent models of the interaction of laser pulses with dielectrics.