Filtern
Erscheinungsjahr
Dokumenttyp
Sprache
- Englisch (26)
Referierte Publikation
- nein (26) (entfernen)
Schlagworte
- Laser-induced periodic surface structures (LIPSS) (8)
- Laser processing (6)
- Femtosecond laser (5)
- Femtosecond laser ablation (5)
- Laser ablation (5)
- Microstructures (4)
- Surface functionalization (4)
- Nanostructures (3)
- Applications (2)
- Chalcopyrite (2)
- Doping (2)
- Laser-induced X-ray emission (2)
- Light concentration (2)
- Micro solar cells (2)
- Selective emitter (2)
- Ablation (1)
- Absorber optimization (1)
- Auger electron spectroscopy (1)
- Biofilms (1)
- Carrier excitation (1)
- Cell adhesion (1)
- Copper indium gallium diselenide (CIGSe) (1)
- CuInSe2 (1)
- Dielectrics (1)
- Double-pulse (1)
- Femtosecond (1)
- Femtosecond laser processing (1)
- Femtosecond pulse laser (1)
- Hard X-ray photoelectron spectroscopy (HAXPES) (1)
- Indium phosphide (1)
- Interferometer (1)
- LIFT (1)
- Laser materials processing (1)
- Laser-induced forward transfer (LIFT) (1)
- Laser-induced periodic surface strcutures (LIPSS) (1)
- Laser-induced periodic surface structures, LIPSS (1)
- Micro solar cell (1)
- Micromachining (1)
- Multicrystalline silicon (1)
- Nanostrcutures (1)
- Optics at surfaces (1)
- Pacemaker (1)
- Polymer (1)
- Radiation protection (1)
- Ripples (1)
- Second harmonic generation (SHG) (1)
- Secondary hazard (1)
- Semiconductors (1)
- Silicon (1)
- Silicon solar cell (1)
- Simulation (1)
- Surface plasmon polaritons (1)
- Time-of-flight secondary ion mass spectrometry (ToF-SIMS) (1)
- Titanium alloy (1)
- Titanium nitride (1)
- Tribology (1)
- Ultra-short pulse laser processing (1)
- Ultrafast phenomena (1)
- Ultrashort laser pulses (1)
- Ultrashort pulse laser processing (1)
- Wetting (1)
Organisationseinheit der BAM
Paper des Monats
- ja (1)
Micromachining experiments were performed with Ti:sapphire laser pulses (130 fs - 150 fs, 800 nm, approximately 10 Hz) in air. Employing the direct focusing technique, highly absorbing titanium nitride (TiN) and weakly absorbing polyimide (PI) and polymethylmethacrylate (PMMA) served as target materials. The lateral and vertical precision of the laser ablation and morphological features were characterized by scanning force (SFM), scanning electron (SEM) and optical microscopy. For TiN, incubation can be observed, i.e. the single-pulse surface damage threshold (0.26 J/cm2) is by a factor of two greater than the threshold for 100 pulses. Ablation rates below 10 nm per pulse can be achieved. The evolution of sub-wavelength ripples is presented in dependence on pulse number and laser fluence, respectively. The incubation behavior of the polymers can be described by an accumulation model as for TiN. Experiments on PI with varying focal lengths result in the same modification thresholds. Different polarization states of light (linear, circular) lead to a variation of the ablation rate and to various morphological patterns in the ablation craters (wavelength ripples, cones). Swelling of PMMA occurred at fluences below the ablation threshold.
Ablation of indium phosphide wafers in air was performed with 130 fs laser pulses at a wavelength of 800 nm at a low repetition rate of 10 Hz. In order to evaluate the role of the incubation effects, the relationship between the number of laser pulses used for the ablation and the threshold fluence was studied. Particular attention was paid to the chemical composition, surface morphology and structural variations of the ablated area.
Summary form only given. Machining investigations of crystalline silicon have been performed with laser pulses at a wavelength of 780 nm in the range between 5 fs and 400 fs. Applying 100 pulses per spot, surface damage thresholds were determined by the measurement of the damage diameter. In this pulse duration regime, the threshold fluences were nearly constant. Single-pulse investigations with 5 fs pulses yielded a value of about 0.15 J cm-2 identical to the multi-pulse experiment. This is in contradiction to the behaviour of dielectrics where incubation effects alter the optical properties down to the 5 fs pulse regime. Employing laser pulses with a duration of 130 fs at a wavelength of 800 nm, single-pulse ablation thresholds of 0.23 J cm-2 and 0.16 J cm-2 were determined for Si and InP in air, respectively. The threshold fluence was calculated from the linear relation between the square of the diameters versus the logarithm of the laser fluences.
Physical and chemical phenomena resulting from irradiation of silicon and indium phosphide with ultrashort laser pulses (~100fs) were investigated
with respect to the difference between single- and multiple-pulse treatment. In the single-pulse case, several processes were identified: modification,
recrystallization and ablation. All processes exhibit a distinct treshold behaviour. A two photon-absorption coefficient can be determined from a single
spatial ablation profile. Accumulation effects were observed for multi-pulse illumination. Different morphological features like bubbles, rippels and
microcolumns were found.
Multi-shot investigations of Ti:sapphire laser (wavelength (lambda) approximately equals 800 nm) induced damage were performed in three different laboratories (BAM, Berlin; LZH, Hannover; UNM, Albuquerque). The ablation behavior of a high reflecting mirror consisting of alternating (lambda) /4- layers of Ta2O5 and SiO2 was studied. Fused silica served as substrate. The influence of the pulse duration ((tau) equals 13 - 130 fs), the pulse number (30 - (infinity) ) and the repetition rate (10 Hz - 100 MHz) on the damage threshold will be discussed.
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
Ultrashort pulse laser materials processing can be accompanied by the production of X-rays. Small doses per laser pulse can accumulate to significant dose rates at high laser pulse repetition rates which may exceed the permitted X-ray limits for human exposure. Consequently, a proper radiation shielding must be considered in laser machining. A brief overview of the current state of the art in the field of undesired generation of X-ray radiation during ultrashort pulse laser material processing in air is presented.
Laser-induced periodic surface structures (LIPSS) are a universal phenomenon and can be generated on almost any material by irradiation with linearly polarized radiation. This chapter reviews the current state in the field of LIPSS, which are formed in a “self-ordered” way and are often accompanying materials processing applications. LIPSS can be produced in a single-stage process and enable surface nanostructuring and, in turn, adaption of optical, mechanical, and chemical surface properties. Typically, they feature a structural size ranging from several micrometers down to less than 100 nm and show a clear correlation with the polarization direction of the light used for their generation. Various types of LIPSS are classified, relevant control parameters are identified, and their material-specific formation mechanisms are analyzed for different types of inorganic solids, i.e., metals, semiconductors, and dielectrics. Finally, technological applications featuring surface functionalization in the fields of optics, fluidics, medicine, and tribology are discussed.
The current state in the field of laser-induced periodic surface structures (LIPSS, ripples) is reviewed. Their formation mechanisms are analyzed in ultrafast experiments (time-resolved diffraction and polarization controlled double-pulse experiments) and technological applications are demonstrated.