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Ablation of single-crystalline (100) indium phosphide wafer surfaces with single 10 fs Ti:sapphire laser pulses in air has been studied by means of complementary cross-sectional transmission electron microscopy, scanning force microscopy, and optical microscopy. A local protrusion of ~70 nm height is generated within the ablation craters for fluences exceeding 0.78 J/cm². This morphological feature has been studied in detail, revealing the material structure of the laser-affected zone and its spatial extent. The resolidified layer (60-200 nm thick) consists of polycrystalline grains (5-15 nm diameter) and is covered by an ~10 nm thick amorphous top layer. Interestingly, the sharp boundary of the solidified layer to the unaffected crystal underneath exhibits a Gaussian-like shape and does not follow the shape of the surface topography. Evidence is presented that the central crater protrusion is formed by near-surface optical breakdown, and that the absorption in the material transiently changes during the femtosecond-laser pulse.
The irradiation of single-crystalline indium phosphide (c-InP) by Ti:sapphire femtosecond laser pulses (130 fs, 800 nm) in air is studied by means of in-situ time resolved reflectivity measurements [fs-time-resolved microscopy (100 fs-10 ns) and point probing analysis (ns - µs)] and by complementary ex-situ surface analytical methods (Micro Raman Spectroscopy, Scanning Force, and Optical Microscopy). The dynamics of melting, ablation, and optical breakdown as well as structural changes resulting from rapid solidification are investigated in detail. Different laser-induced surface morphologies are characterized and discussed on the basis of recent ablation and optical breakdown models.