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- Femtosecond laser ablation (7)
- Laser processing (7)
- Laser-induced periodic surface structures (LIPSS) (6)
- Surface functionalization (4)
- Ablation (3)
- Laser-induced X-ray emission (3)
- Applications (2)
- Cu(InGa)Se2 (2)
- Doping (2)
- Laser ablation (2)
Organisationseinheit der BAM
Antibiotic resistance is a growing global problem which poses a massive threat to human health. Although human activity contributes to the acceleration of the process, bacteria have a self-driven stabilisation mechanism to protect themselves from such and other external threats: biofilm formation. Nonetheless, it is the adhesion of a single bacterial cell to a surface that triggers the formation of such network of biomolecules and microorganisms, as well as its hazardous consequences. The main objective of this work was to quantify the adhesion force of a single E. coli cell on a Ti substrate via the AFM-related single-cell force spectroscopy, with both the cell and the substrate material being of high clinical relevance. A set of 25 x 25 force displacement curves was acquired with a maximum force of 3.2 nN without dwell time, yielding a topography map and an adhesion force map that showed to be correlated. A mean adhesion force of 0.85 ± 0.175 nN was measured and the presence of cell appendages on the bacterial cell wall was verified through individual force-displacement curves. Bacterial viability was assessed after the measurements via live/dead staining.
Ein wesentlicher Vorteil der Dünnschichtphotovoltaik gegenüber der waferbasierten Photovoltaik liegt in der monolithischen Serienverschaltung. Bei der Herstellung von Chalkopyrit(CIGSe) -Dünnschicht-Solarmodulen erfolgen dafür typischerweise ein Laser-Strukturierungsschritt (P1) und zwei mechanische Strukturierungsschritte (P2, P3). In diesem Beitrag wird gezeigt, dass die Strukturierung von CIGSe-Solarmodulen vollständig mit kurzen Laserpulsen (<10 ns Pulsdauer) und einer einzigen Wellenlänge (532 nm) möglich ist. Der P1- und P3-Schnitt erfolgen durch direkte induzierte Ablation. Für den P2-Schnitt wird gezielt der hohe Wärmeeintrag der ns-Laserpulse genutzt, um die CIGSe-
Absorberschicht lokal aufzuschmelzen und strukturell so zu verändern, dass eine elektrisch gut leitende Verbindung zwischen Front- und Rückkontakt entsteht.
XUV- and X-ray free-electron-lasers (FEL) combine short wavelength, ultrashort pulse duration, spatial coherence and high intensity. This unique combination of properties opens up new possibilities to study the dynamics of non-reversible phenomena with ultrafast temporal and nano- to atomic-scale spatial resolution. In this contribution we wish to present results of time-resolved experiments performed at the XUV-FEL FLASH (HASYLAB/Hamburg) aimed to investigate the nano-scale structural dynamics of laser-irradiated materials. Thin films and fabricated nano-structures, deposited on Si3N4-membranes, have been excited with ultrashort optical laser pulses. The dynamics of the non-reversible structural evolution of the irradiated samples during laser-induced melting and ablation has been studied in an optical pump - XUV-probe configuration by means of single-shot coherent scattering techniques (i.e. diffraction imaging [1]). In a first set of experiments we investigated the formation of laser induced periodic surface structures (LIPSS) on the surface of thin Si-films (thickness 100 nm). In a simplified view LIPPS are generated as a result of interference between the incident laser pulse and surface scattered waves which leads to a periodically modulated energy deposition. Time-resolved scattering using femtosecond XUV-pulses (with a wavelength of 13.5 nm and 7 nm) allowed us to directly follow LIPSS evolution on an ultrafast time-scale and with better than 40 nm spatial resolution. The observed scattering patterns show almost quantitative agreement with theoretical predictions [2] and reveal that the LIPSS start to form already during the 12 ps pump pulse. In the second set of measurements we studied picosecond and femtosecond laser induced ablation and disintegration of fabricated nano-structures. Correlations of coherent diffraction patterns measured at various time delays to the pattern of the undisturbed object show that order in the structure is progressively lost starting from short length scales. This structural rearrangement progresses at close to the speed of sound in the material. Under certain circumstances (e.g. adequate sampling) it became also possible to reconstruct real-space images of the object as it evolves over time [3]. The possibility of femtosecond single-shot imaging of ultrafast dynamic processes with nanoscale resolution provides yet more details of the physical processes involved. [1] H. N. Chapman et al. Nature Phys. 2, 839 (2006). [2] J. F. Young et al., Phys. Rev. B 27, 1155 (1983). [3] A. Barty et al. Nature Phot. 2, 415 (2008).
Compositional dependent response of silica-based glasses after femtosecond laser pulse irradiation
(2013)
Femtosecond laser pulse irradiation of inorganic glasses allows a selective modification of the optical properties with very high precision. This results in the possibility for the production of three-dimensional functional optical elements in the interior of glass materials, such as optical data storage, waveguide writing, etc. The influence of the chemical glass composition to the response upon ultrashort laser irradiation has not been studied systematically. For that, simple silicabased model glasses composed of systematically varying alkaline- and earth-alkaline components were prepared, irradiated on the surface and in the volume with single fs-laser pulses (~130 fs, 800 nm), and were subsequently analyzed by means of micro-Raman spectroscopy and quantitative phase contrast microscopy in order to account for changes in the glass structure and for alterations of the optical refractive index, respectively. The Raman spectroscopic studies of the laser-irradiated spots revealed no change in the average binding configuration (the so called Q-structure), but local changes of bond-angles and bond-lengths within the glass structure structure. Those changes are explained by structural relaxation of the glass network due to densification caused by a transient laser-induced plasma generation and the following shock wave and other thermal phenomena. Glasses with a low amount of network modifiers show changes in the Si-O network while glasses with a high amount of network modifiers react primarily via variation of the nonbridging oxygen ions. The results are discussed in terms of possible structural response mechanisms and conclusions are outlined regarding glass compositions with technical suitability for fs-laser modifications.
In this work, glasses with systematically varied compositions were manufactured and irradiated by single Ti:sapphire fs-laserpulses (800 nm, 120 fs), focused at the surface and into the bulk of the glass materials. The samples were tested for their ablation threshold fluence as well as for structural changes using µ-Raman-spectroscopy. Correlations between the glass composition, the material-ablation on the glass surface and the permanent changes of the refractive index inside the glass volume after the irradiation by fs-laser pulses were obtained. The results show, that the structural modifications found at the surface of the glasses and inside its volume are closely related. However, while the ablation threshold fluence of the glass surface primarily depends on the glass dissociation energy, the permanent refractive index change inside the volume is rather determined by its ability for absorbing the fs-laser pulses and the subsequent relaxation processes. The results of this work provide some guidance on how the glass composition can be varied in order to optimize the fs-laser induced modification of dielectrics.
Serial interconnection of CIGSe thin film solar modules involves typically glass-side laser patterning of the molybdenum layer (P1 scribe). In this paper we present a working principle of P1 film side patterning. The investigated samples were sputter-deposited onto soda-lime glass substrates. For understanding the fundamental ablation behavior, two kinds of layer systems were studied: on the one hand monolayer systems which are compressively stressed and on the other hand bilayer systems, consisting of a tensile stressed layer on the substrate and a second layer on top. The film-side ablation process was studied using a nanosecond as well as a picosecond laser source. The influence of intrinsic stress was studied by XRD. Time resolved spectroscopy reveals the formation of plasma as important driving mechanism for ablation. It is shown that by proper adaption of the sputter conditions high-quality P1 film side patterning is achieved.
Manufacturing of CIGSe thin film solar modules involves typically one laser structuring step (P1) and two mechanical structuring steps (P2 and P3) for serial interconnection. In our approach, complete laser structuring is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single, visible wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced and direct ablation, respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound to provide proper electrical interconnection. These findings promise further simplification and flexibility to thin film solar cell production.
Light concentration opens up the path to enhanced material efficiency of solar cells via increased conversion efficiency and decreased material requirement. For true material saving, a fabrication method allowing local growth of high quality absorber material is essential. We present two scalable fs-laser based approaches for bottom-up growth of Cu(In,Ga)Se2 micro islands utilizing either site-controlled assembly of In(,Ga) droplets on laser-patterned substrates during physical vapor deposition, or laser-induced forward transfer of (Cu,In,Ga) layers for local precursor arrangement. The Cu(In,Ga)Se2 absorbers formed after selenization can deliver working solar devices showing efficiency enhancement under light concentration.
Structuring of thin-film photovoltaic modules requires basic knowledge of the laser – thin-film interaction in order to adapt the accessible laser parameters, like wavelength, power, repetition rate and scribing speed whilst taking into account the specific material properties of the layer. We have studied the nanosecond laserablation behavior of corresponding layers (i) of silicon based thin-film solar cells with a-Si/µc-Si tandem absorber type and (ii) of back contact and absorber layer of CIGSe solar cells. The respective ablation threshold fluences were determined as integrative parameters describing the specific laser – material interaction. For the threshold determination we used two different methods and developed a new analytical approach taking into account scribing through the glass substrate as it is preferred for most structuring processes. This was done by analyzing the thin film ablation results by means of optical microscopy, profilometry, scanning electron microscopy (SEM). Moreover, we determined the incubation coefficient of the regarded material layers which allows us to predict quantitatively the influence of the spot overlap on the scribing threshold.