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- 2010 (4) (entfernen)
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- Englisch (4)
Referierte Publikation
- ja (4)
Schlagworte
- Femtosecond laser ablation (2)
- Elemental semiconductors (1)
- Fourier transforms (1)
- Heat affected zone (1)
- Indium phosphide (1)
- Laser beam effects (1)
- Laser damage (1)
- Laser safety (1)
- Optical breakdown (1)
- Optical microscopy (1)
A new approach is presented to quantify the so-called "heat affected zone" (HAZ) during
femtosecond laser pulse processing. Ablation of titanium nitride (TiN) thin films (~3 μm
thickness) by multiple femtosecond laser pulses (τ=130 fs, λ=800 nm) in air environment was
studied by means of two different surface analytical methods both being sensitive to chemical
alterations at the surface. Scanning Auger electron microscopy was applied for a visualization of the
spatial distribution of specific elements (Ti, O) within the laser-modified areas. The chemical state
of the irradiated surface was revealed by complementary x-ray photoelectron spectroscopy. Both
methods were used for a depth-profiling chemical analysis (tracking the elements Ti, N, O, and C)
using an Ar-ion beam for surface sputtering. In a narrow laser fluence range slightly below the
ablation threshold of TiN significant superficial oxidation can be observed leading to the formation
of substoichiometric TiO2-x. At fluences above the ablation threshold, an increased titanium
concentration is observed within the entire ablation craters. Following upon sputter removal the
elemental distribution into the depth of the nonablated material, the results allow an estimation of
the heat-affected zone for femtosecond laser ablation in air environment. According to our analyses,
the HAZ extends up to a few hundreds of nanometers into the nonablated material.
This contribution investigates laser-induced damage of thin film and bulk polymer
samples, with the focus on physical processes occurring close to the damage threshold. In-situ
real-time reflectivity (RTR) measurements with picosecond (ps) and nanosecond (ns) temporal
resolution were performed on thin polymer films on a timescale up to a few microseconds (µs).
A model for polymer thin film damage is presented, indicating that irreversible chemical
modification processes take place already below the fluence threshold for macroscopic damage.
On dye-doped bulk polymer filters (as used for laser goggles), transmission studies using fs-and
ps-laser pulses reveal the optical saturation behavior of the material and its relation to the
threshold of permanent damage. Implications of the sub-threshold processes for laser safety
applications will be discussed for thin film and bulk polymer damage.
The irradiation of single-crystalline indium phosphide (c-InP) by Ti:sapphire femtosecond laser pulses (130 fs, 800 nm) in air is studied by means of in-situ time resolved reflectivity measurements [fs-time-resolved microscopy (100 fs-10 ns) and point probing analysis (ns - µs)] and by complementary ex-situ surface analytical methods (Micro Raman Spectroscopy, Scanning Force, and Optical Microscopy). The dynamics of melting, ablation, and optical breakdown as well as structural changes resulting from rapid solidification are investigated in detail. Different laser-induced surface morphologies are characterized and discussed on the basis of recent ablation and optical breakdown models.
The formation of nearly wavelength-sized laser-induced periodic surface structures (LIPSS) on
single-crystalline silicon upon irradiation with single (N = 1) and multiple (N ≤ 1000) linearly
polarized femtosecond (fs) laser pulses (pulse duration τ = 130 fs, central wavelength λ = 800 nm)
in air is studied experimentally. Scanning electron microscopy (SEM) and optical microscopy are
used for imaging of the ablated surface morphologies, both revealing LIPSS with periodicities close
to the laser wavelength and an orientation always perpendicular to the polarization of the fs-laser
beam. It is experimentally demonstrated that these LIPSS can be formed in silicon upon irradiation
by single fs-laser pulses—a result that is additionally supported by a recent theoretical model.
Two-dimensional Fourier transforms of the SEM images allow the detailed analysis of the
distribution of the spatial frequencies of the LIPSS and indicate, at a fixed peak fluence, a
monotonous decrease in their mean spatial period between ~770 nm (N = 1) and 560 nm (N
= 1000). The characteristic decrease in the LIPSS period is caused by a feedback-mechanism acting
upon excitation of surface plasmon polaritons at the rough silicon surface which is developing under
the action of multiple pulses into a periodically corrugated surface.