Filtern
Erscheinungsjahr
- 2016 (1)
Dokumenttyp
Sprache
- Englisch (1)
Referierte Publikation
- nein (1)
Schlagworte
Aluminium is still one of the most important contact metallisations for power electronic chips like MOSFETs or IGBTs. With a large difference in thermal expansion coefficients (CTEs) between aluminium and silicon and the temperatures generated in hot-spots during high power transients, these layers are prone to failure due to thermo-mechanical fatigue. Usually lifetime assessment is done by subjecting dedicated test specimens to standardised stress tests as e.g. active or passive thermal cycling. This paper proposes a novel method for accelerated stress testing and lifetime modelling of thin aluminium films in the high-cycle fatigue regime by isothermal mechanical loading. The proposed novel test method is suggested to complement or replace resource-demanding thermal cycling tests and allow simple in-situ monitoring of failure.