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- Laser ablation (5) (entfernen)
The 125-fs laser ablation behaviour (800 nm) of aluminium and anodic oxide coatings on an AlMgSi1 alloy was investigated. The multi-pulse ablation threshold of aluminium at 1.2 J cm-2 was less than that of the oxides of 23 J cm-2. Aluminium exhibited a single pulse modification (melting) threshold of 0.3 J cm-2. These values derived from an evaluation of the crater geometry coincided with on-line acoustic measurements. The detected microphone voltage amplitude increased linearly with the laser fluence. The morphology of the ablation craters on aluminium indicated melt formation and displacement of a homogeneous melt phase due to the recoil action of the expanding metal vapour. The laser-processed ceramic oxide phases, on the other hand, showed a spongy resolidified melt layer, which denotes a collocated in-depth formation both of a melt and a gas phase. These phenomena are discussed in terms of the relative dominance of penetration depth of laser light and heat affected zones in the investigated materials with strongly varying optical and thermodynamical properties.
The ultrafast laser ablation of silicon has been investigated experimentally and theoretically. The theoretical description is based on molecular dynamics (MD) simulations combined with a microscopic electronic model. We determine the thresholds of melting and ablation for two different pulse durations =20 and 500 fs. Experiments have been performed using 100 Ti:Sap-phire laser pulses per spot in air environment. The ablation thresholds were determined for pulses with a duration of 25 and 400 fs, respectively. Good agreement is obtained between theory and experiment.
KrF excimer laser ablation of polyethylene terephthalate (PET), polyimide (PI) and polycarbonate (PC) in air was studied by an in situ monitoring technique using a microphone. The microphone signal generated by a short acoustic pulse represented the etch rate of laser ablation depending on the laser fluence, i.e., the ablation strength. From a linear relationship between the microphone output voltage and the laser fluence, the single-pulse ablation thresholds were found to be 30 mJ cm-2 for PET, 37 mJ cm-2 for PI and 51 mJ cm-2 for PC (20-pulses threshold). The ablation thresholds of PET and PI were not influenced by the number of pulses per spot, while PC showed an incubation phenomenon. A microphone technique provides a simple method to determine the excimer laser ablation threshold of polymer films.
Multiple pulse investigations of 130-fs Ti:sapphire laser-induced damage of a high reflecting mirror consisting of alternating ?/4-layers of Ta2O5 and SiO2 and a single 500-nm Ta2O5 film were performed. In both cases, fused silica served as the substrate. For a fixed number of 1000 laser pulses per spot, a decrease in the damage threshold fluence of the mirror by a factor of two was observed by changing the repetition rate from 10 Hz to 1 kHz. A single 500-nm Ta2O5 film shows higher damage resistance compared to the mirror. The mirror and the Ta2O5 film samples were partially coated with a 300-nm-thick aluminium layer. The aluminium coating does not influence the damage threshold of the dielectrics underneath.