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In the frame of the European project NanoValid, potential candidates of reference nanomaterials are manufactured and systematically characterized in particular with respect to their morphology (shape, size and size distribution). In this study, by exploiting the transmission operation mode in a high-resolution SEM, known as transmission SEM, the potential of this methodical approach is demonstrated by means of representative examples of nanoparticles. The method enables quick and accurate morphological inspection and systematic characterization. Energy dispersive X-ray spectroscopy imaging of single nanoparticles by using the transmission mode is demonstrated as feasible, too.
Need for large-area EDS detectors for imaging nanoparticles in a SEM operating in transmission mode
(2014)
To compare the performance of different energy dispersive X-ray spectrometers (EDS), it is important to define characteristic spectrometer parameters. The ISO 15632 standard defines parameters like energy resolution as FWHM for the Kα lines of carbon, fluorine and manganese. The quantum efficiency, which is the ratio of the detected photons divided by the number of incoming photons for different energies, is another significant spectrometer property. It is important for the light element and low energy line detection sensitivity as well as for higher photon energies above 10 keV. A striking EDS feature, provided and marketed by many manufactures, is the active area of the detector, although actually, the solid angle available for photon collection is the more relevant geometrical parameter. It is defined as: Ω = A /r2 with A being the active area of a spherical detector and r being the distance between the point of the radiation origin and the center of the surface of the active detector chip. A more accurate calculation should be used for large flat detector areas. One should note that the solid angle Ω is not an intrinsic spectrometer property. It can only be defined for a specific detector in combination with a specific system (e.g. SEM, EPMA or TEM). Thus, the minimal possible distance r is determined by the particular geometry e.g. a possible interference with the pole piece or other detectors/components in the chamber of a microscope. New EDS technologies use e.g. integrated SDD chips or inclined chips in thinner detector fingers which can be placed closer to the sample with the final result of larger real solid angles. Therefore, the knowledge of the real solid angle is one of the crucial parameters of an EDS microscope combination. A straightforward way to estimate the real solid angle is to simply determine A and r. If respective data are not provided by the manufacturer, this approach can be difficult.
A pilot study (PS) has been performed under the Consultative Committee for Amount of Substance (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare the atomic fractions of Cu, In, Ga and Se in CIGS alloy films. Four polycrystalline CIGS films with different atomic fractions were fabricated by variation of the relative atomic fraction of Ga on 100 mm x 100 mm soda-lime glass (SLG) substrates. Similar to real solar cells the atomic fractions of the four elements (Cu, In, Ga, Se) are not homogeneous with depth. For the analysis of the CIGS layers of about 2 μm thickness depth profiling with surface analysis techniques such as XPS, AES and SIMS was recommended. A CIGS alloy reference sample with atomic fractions certified by isotope dilution ICP-MS at KRISS has been also put at disposal by the coordinator of the comparison. The certified values were close to the atomic fractions of the samples to be analyzed. Hence, the atomic fractions of Cu, In, Ga and Se in the CIGS films could be determined by the relative sensitivity factors (RSF) derived from the reference CIGS film. The total ion intensities of the constituent elements were obtained by the total number counting (TNC) method.
An inter-laboratory comparison organized as a pilot study (PS) has been performed under the umbrella of the Consultative Committee for Amount of Substance – Metrology in Chemistry (CCQM) / Surface Analysis Working Group (SAWG) with the objective to compare k-values measured with Electron Probe X-ray Microanalysis (EPMA) for copper-gold alloys. The k-value, defined as the ratio of the Xray photon intensity of an X-ray characteristic line of the unknown sample to the corresponding one in the reference material, is a rough estimate of the mass fraction of the respective element. Basically, the mass fractions can be calculated from the k-values after applying a matrix correction procedure, which includes empirical approaches, so that traceability gets lost. Due to its physical, measurable nature, the k-value has been selected in the present PS as the primary measurand. The mass fraction has been set as the secondary (derived) measurand. Both EDX and WDX have been employed. The WDX results and the overall comparability between the k-values obtained by EDX and WDX are still in progress.
The analytical performance of high-resolution scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) for accurate determination of the size, size distribution, qualitative elemental analysis of nanoparticles (NPs) was systematically investigated. It is demonstrated how powerful high-resolution SEM is by using both mono- and bi-modal distributions of SiO2 airborne NPs collected on appropriate substrates after their generation from colloidal suspension. The transmission mode of the SEM (TSEM) is systematically employed for NPs prepared on thin film substrates such as transmission electron microscopy grids. Measurements in the transmission mode were performed by using a 'single-unit' TSEM transmission setup as manufactured and patented by Zeiss. This alternative to the 'conventional' STEM detector consists of a special sample holder that is used in conjunction with the in-place EverhartThornley detector. In addition, the EDX capabilities for imaging NPs, highlighting the promising potential with respect to exploitation of the sensitivity of the new large area silicon drift detector energy dispersive X-ray spectrometers were also investigated. The work was carried out in the frame of a large prenormative VAMAS (Versailles Project on Advanced Materials and Standards) project, dedicated to finding appropriate methods and procedures for traceable characterization of NP size and size distribution.
The redeposited material (debris) resulting from ablation of a potassium–magnesium silicate glass upon scanning femtosecond laser pulse irradiation (130 fs, 800 nm) in air environment is investigated by means of three complementary surface analytical methods. Changes in the electronic band structure of the glass constituent Magnesium (Mg) were identified by X-ray Absorption Near Edge Structure spectroscopy (XANES) using synchrotron radiation. An up-shift of ≈0.8 eV of a specific Magnesium Κ-edge absorption peak in the spectrum of the redeposited material along with a significant change in its leading edge position was detected. In contrast, the surface left after laser ablation exhibits a downshift of the peak position by ≈0.9 eV. Both observations may be related to a change of the Mg coordinative state of the laser modified/redeposited glass material. The presence of carbon in the debris is revealed by micro Raman spectroscopy (µ-RS) and was confirmed by energy dispersive X-ray spectroscopy (EDX). These observations are attributed to structural changes and chemical reactions taking place during the ablation process.