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A bottom-up approach to produce arrays of indium islands on a molybdenum layer on glass using 30-fs laser pulses at 790 nm wavelength is presented. These islands can serve as micro-sized precursors for indium compounds such as copper-indium-gallium-diselenide (CIGSe) used in photovoltaics. Molybdenum is the standard back contact material of CIGSe solar cells. Femtosecond laser ablation of glass and a subsequent deposition of a molybdenum film or direct laser processing of the molybdenum film both allow the preferential nucleation and growth of indium islands at the predefined locations in a following indium-based physical vapor deposition (PVD) process. A proper choice of laser and deposition parameters ensures the controlled growth of indium islands exclusively at the laser ablated spots. Based on a statistical analysis, these results are compared to the non-structured molybdenum surface, leading to randomly grown indium islands after PVD.
A promising technology in photovoltaics is based on micro-concentrator solar cells, where the photovoltaic active area is realized as an array of sub-millimeter sized cells onto which the incident light is focused via microlenses. This approach allows to increase the cell efficiency and to realize much more compact modules compared to macroscopic concentrator devices. At the same time, expensive raw materials can be saved, which is of interest, for example, with respect to indium in the case of copper-indium-gallium-diselenide (CIGSe) thin film solar cells. Two methods to produce micro-sized precursors of CIGSe absorbers on molybdenum are presented using 30-fs laser pulses at 790 nm wavelength. On the one hand, a multi pulse surface structuring of the molybdenum film or the underlying glass substrate and a subsequent physical vapor deposition were used for a site-selective aggregation of indium droplets. On the other hand, a single pulse laser-induced forward transfer was utilized to selectively deposit combined copper-indium precursor pixels on the molybdenum back contact of the solar cell. Post-processing (selenization, isolation, contacting) of the laser-generated micro-sized precursors results in functional CIGSe solar cells.
A promising technology in photovoltaics is based on micro-concentrator solar cells, where the photovoltaic active area is realized as an array of sub-millimeter sized thin-film solar cells. Different approaches to produce micro-sized precursors of CIGSe absorbers on molybdenum are presented using 30-fs laser pulses at 790 nm wavelength. On the one hand, a multi pulse surface structuring of the molybdenum or the underlying glass substrate and a subsequent physical vapor deposition (PVD) process were used for a site-selective aggregation of indium droplets. On the other hand, a single pulse laser-induced forward transfer (LIFT) was utilized to selectively deposit combined copper/indium/gallium precursor pixels on the molybdenum back contact of the solar cell. It was demonstrated that a postprocessing of the laser-generated micro-sized precursors results in an array of working CIGSe solar cells with an efficiency of 2.9% for 1 sun Illumination.
Thin film solar cells made of Cu(In,Ga)Se2 (CIGSe) suffer from high costs, since the rare elements indium and gallium are used for a multitude of technical applications. The concept of micro-concentrator CIGSe solar cells allows substantial material saving. Therefore a reliable bottom up process for the preparation of the absorber islands is required. In addition, this also results in an increase of solar cell efficiency. We show that the indium islands can be grown at predefined locations by novel methods of surface treatment before indium deposition. By this, regular island patterns with a well-defined morphology have been obtained. The controlled deposition of copper, followed by selenization in a PVD system, and selective etching of copper selenides yields polycrystalline CIGSe micro islands with promising material properties. For the samples, we proof ways to place a non-conducting layer in between CIGSe islands to insulate the front and back contact. This layer is obtained by spin-coating and curing a novolak based resist. At first, the photovoltaic active absorber islands is completely covered by the resin. The top of the islands can be stripped by plasma etching for front contacting. A characterization of the obtained devices provided evidence for their functionality.