Filtern
Erscheinungsjahr
- 1993 (16) (entfernen)
Dokumenttyp
- Zeitschriftenartikel (16)
Referierte Publikation
- ja (16) (entfernen)
Schlagworte
- 2,2´-Bipyridyl-3,3´-diol (1)
- Cation dependence (1)
- Fluorescence probe (1)
- Metal ions (1)
Intrinsically conductive plasma polymers were formed in a 2.45 GHz microwave low pressure plasma. The electrical conductivity and structure of the polymeric films were compared with those of electrochemically polymerized polythiophene. A new method of doping was tested using the iodine-containing monomer 2-iodothiopene. Films with high electrical conductivity (10-1 down to 10-6 S cm-1) could be produced, and their chemical structure was studied by X-ray photoelectron spectroscopy and Fourier transform IR spectroscopy. The IR spectra give a strong indication that the chemical structure of these films is comparable with that of electrochemically deposited polythiophene. Optical emission spectroscopy was used to give in-situ information about the fragmentation mechanism in the plasma.
The photophysical behavior of poly(p-phenylphenylenevinylene) (PPPV) and several oligomeric
model compounds in isotropic and anisotropic samples is investigated by means of polarized fluorescence
spectroscopy. As long as excitation energy transfer and mutual alignment are considered, the behavior of
PPPV can be modeled by a chain consisting of a distribution of independent oligomeric segments. The
results of fluorescence polarization, e.g., the nonzero value of r in isotropic PPPV, cast doubt on the application
of the semiconductor band model but favor an interpretation of spectroscopic properties in terms of molecular
transitions. The orientation coefficients of the oligomers and of PPPV in stretched polyethylene are determined.
The change of fluorescence spectra of oriented PPPV in stretched polyethylene demonstrates directly that
conformational changes of the macromolecule influence the pathway of energy transfer.
In situ second harmonic generation measurements during the electrodeposition of Ni on n-Si(111)
(1993)