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The present study investigates the use of imaging and mapping ellipsometry to determine the properties of non-ideal and patterned thin film samples. Samples which are candidates for future references and standards were prepared for this purpose. The samples investigated were lithographically patterned SiO2 and photoresist layers. The thickness and the optical constants of the two materials were determined using spectroscopic ellipsometry in the visible spectral range. On a larger lateral scale of several mm lateral resolution, the homogeneity was investigated using a goniospectral rotating compensator ellipsometer. A nulling imaging ellipsometer was used to determine the properties of the sample on a smaller scale of 25–150 µm.
The analytical performance of high-resolution scanning electron microscopy/energy dispersive X-ray spectroscopy (SEM/EDX) for accurate determination of the size, size distribution, qualitative elemental analysis of nanoparticles (NPs) was systematically investigated. It is demonstrated how powerful high-resolution SEM is by using both mono- and bi-modal distributions of SiO2 airborne NPs collected on appropriate substrates after their generation from colloidal suspension. The transmission mode of the SEM (TSEM) is systematically employed for NPs prepared on thin film substrates such as transmission electron microscopy grids. Measurements in the transmission mode were performed by using a 'single-unit' TSEM transmission setup as manufactured and patented by Zeiss. This alternative to the 'conventional' STEM detector consists of a special sample holder that is used in conjunction with the in-place EverhartThornley detector. In addition, the EDX capabilities for imaging NPs, highlighting the promising potential with respect to exploitation of the sensitivity of the new large area silicon drift detector energy dispersive X-ray spectrometers were also investigated. The work was carried out in the frame of a large prenormative VAMAS (Versailles Project on Advanced Materials and Standards) project, dedicated to finding appropriate methods and procedures for traceable characterization of NP size and size distribution.
Overlayers of SiO2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxide overlayer by applying an appropriate quantitative model. The uncertainty budget of that thickness measurement method is given. The relative combined standard uncertainty of the method was found to be 15%. The effective attenuation lengths or the corresponding electron inelastic mean free paths are of considerable importance for both the estimated values of overlayer thickness and combined standard uncertainties. The XPS results were compared with ellipsometry data.