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Nowadays, sensors based on polymers/nanostructured metal oxide composites have been investigated exten-sively because of their sensitivity to NO2 gas at ambient temperature. In this work, nanocomposite membranes of xanthan gum (XG) with different contents of MnO2 nanoparticles were prepared as a potential NO2 gas sensor operating at room temperature by a simple one-step oxidation-reduction reaction. The structural, morphological, thermal, and electrical properties of the composite membrane were investigated. The FT-IR results confirm the successful preparation of MnO2 through the oxidation of XG by KMnO4 and reveal further the structural changes of the XG/MnO2 nanocomposite upon its exposure to NO2 gas. The capping of the synthesized MnO2 nano-particles by XG, the surface composition of the XG/MnO2 nanocomposite membranes, and the effect of NO2 gas on the surface composition was investigated using the XPS technique. The DC conductivity and dielectric loss of nanocomposites were higher than for neat XG. The conductivities of the nanocomposites XG/MO-4, XG/MO-4/ low NO2, and XG/MO-4/high NO2 composites are half, one, and three orders of magnitude higher than that for pure XG revealing a transition from insulating to conductive properties. The results demonstrated that XG/MnO2 nanocomposite membranes are promising for potential applications in NO2 gas sensing.
The device performance of polycrystalline chalcogenide thin film solar cells is strongly influenced by different kinds of defects within the material. The presence of sodium or other alkali metals like potassium during the deposition process is well known to influence the electronic properties of the solar cell and thus to improve the efficiency of the final device. Structural analysis of neutron powder diffraction data collected at low temperatures and subsequent profile analysis by the LeBail and Rietveld method demonstrates the impact of sodium on the point defect characteristics in off stoichiometric CuInSe2. The analyzed materials are powder and thin film solar absorber material with addition of NaF and free of sodium. It is illustrated, the so called “sodium effect” cannot be reduced to one single origin. A range of effects, the reduction of InCu donors with a followed increase of VCu acceptors is possible. The main effect is an increased ordered character of the chalcopyrite crystal structure at off stoichiometric composition, when containing sodium.
The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of silicon wafer surfaces by linearly polarized Ti:sapphire femtosecond laser pulses (pulse duration 130 fs, central wavelength 800 nm) is studied experimentally and theoretically. In the experiments, so-called low-spatial frequency LIPSS (LSFL) were found with periods smaller than the laser wavelength and an orientation perpendicular to the polarization. The experimental results are analyzed by means of a new theoretical approach, which combines the widely accepted LIPSS theory of Sipe et al. with a Drude model, in order to account for transient (intra-pulse) changes of the optical properties of the irradiated materials. It is found that the LSFL formation is caused by the excitation of surface plasmon polaritons, SPPs, once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material and the subsequent interference between its electrical field with that of the incident laser beam resulting in a spatially modulated energy deposition at the surface. Moreover, the influence of the laser-excited carrier density and the role of the feedback upon the multi-pulse irradiation and its relation to the excitation of SPP in a grating-like surface structure is discussed.
The formation of laser-induced periodic surface structures (LIPSS) upon irradiation of semiconductors and dielectrics by linearly polarized high-intensity Ti:sapphire fs-laser pulses (τ ~100 fs, λ ~800 nm) is studied experimentally and theoretically. In the experiments, two different types of LIPSS exhibiting very different spatial periods are observed (socalled LSFL low spatial frequency LIPSS, and HSFL - high spatial frequency LIPSS), both having a different dependence on the incident laser fluence and pulse number per spot. The experimental results are analyzed by means of a new theoretical approach, which combines the generally accepted LIPSS theory of J. E. Sipe and co-workers [Phys. Rev. B 27, 1141-1154 (1983)] with a Drude model, in order to account for transient changes of the optical properties of the irradiated materials. The joint Sipe-Drude model is capable of explaining numerous aspects of fs-LIPSS formation, i.e., the orientation of the LIPSS, their fluence dependence as well as their spatial periods. The latter aspect is specifically demonstrated for silicon crystals, which show experimental LSFL periods Λ somewhat smaller than λ. This behaviour is caused by the excitation of surface plasmon polaritons, SPP, (once the initially semiconducting material turns to a metallic state upon formation of a dense free-electron-plasma in the material) and the subsequent interference between its electrical fields with that of the incident laser beam, resulting in a spatially modulated energy deposition at the surface.
Upon multi-pulse irradiation, a feedback mechanism, caused by the redshift of the resonance in a grating-assisted SPP excitation, is further reducing the LSFL spatial periods. The SPP-based mechanism of LSFL successfully explains the remarkably large range of LSFL periods between ~0.6 λ and λ.
In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author)