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In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author)
Powder x-ray diffraction (XRD) defined -Al2O3 has been investigated by x-ray photoelectron spectroscopy (XPS) and x-ray excited Auger electron spectroscopy (XAES). The Au 4f7/2 orbital is used for static charge referencing. This feature originates from well-defined and chemically inert 20 nm highly dispersed gold particles deposited on the sample surface. The particles, with a narrow particle size distribution, were obtained from a highly purified colloidal solution (sodium concentration below 1 mg/l). This procedure allows a determination of gold-referenced XPS and XAES data sets. ©2001 American Vacuum Society.