In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author)
Femtosecond laser interaction with silicon was investigated in water and in air, with 130-fs laser pulses at 800 nm wavelength. Under water confinement, higher modification thresholds, lower ablation depths and similar incubation factors were found in comparison to the dry experiment. Morphological features of the laser-induced cavities also differed. In contrast to air experiments, debris redeposition was negligible, while the ablated material remained suspended in the water layer phase. Underwater cavities obtained at high fluences and high number of pulses per spot showed anomalous profiles, consistent with a strong spatial deformation of the laser beam coupled into the target. Ripples formed at the edges of the modified area showed varying spacings: f100 and f700 nm for water and air experiments, respectively. Differences to the air experiment were related to a complex combination of fluence-dependent non-linear effects occurring in the water layer and to pulse-number-dependent shielding effects induced by cavitation bubbles and suspended ablated
material.
Ultrashort pulse laser microstructuring (pulse duration 130 fs, wavelength 800 nm, repetition rate 2 Hz) of titanium nitride (TiN) films on silicon substrates was performed in air using the direct focusing technique. The lateral and vertical precision of laser ablation was evaluated. The TiN ablation threshold changed with the number of pulses applied to the surface due to an incubation effect. An ablation depth per pulse below the penetration depth of light was observed. Columnar structures were formed in the silicon substrate after drilling through the TiN layer.