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Erscheinungsjahr
- 1995 (6) (entfernen)
Dokumenttyp
Schlagworte
- Femtosecond-Pulse Laser (2)
- Semiconductors (2)
- Silicon (2)
- Ablation (1)
- Adsorption (1)
- Doppelprozeß (1)
- Dry Etching (1)
- Dünnschicht, halbleitend (1)
- Dünnschicht, metallisch (1)
- Elekrochemie (1)
In situ optical second-harmonic generation (SHG) on centrosymmetric crystalline semiconductor electrodes opens up a new field of in situ investigations of hurried solid state interfaces and metal front contacts relevant to electronic and photovoltaic devices, which are rarely accessible by other methods. Photoelectrochemical nanosecond- and femtosecond-pulse laser investigations of silicon (111) electrodes show that in situ SHG is feasible in such complex interfacial systems. In a p-p polarization configuration, the azimuthal dependence of the SHG from oxide-covered and bare n-Si (111) electrodes, with and without Ni contact deposits, have been studied. Etching and regrowth of silicon oxides as well as burried interfacial electric field distributions were monitored. In situ SHG is shown to be extremely sensitive to trapped interfacial charge, crystal misorientations and surface step arrays. An advantage of femtosecond-pulses is the fact that illumination fluences that are well below the damage threshold, but still with sufficient power density, can be applied. (Author)