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Strahlenverfahren in Kombination - ein Werkzeug für Analyse und Zertifizierung von Feststoffen
(2002)
A layer of Sb atoms, implanted with an energy of 400 keV and a nominal dose of 5×1016 atoms/cm2 into a high purity silicon wafer, was certified for its areal density (atoms/cm2) using Rutherford backscattering spectrometry (RBS), instrumental neutron activation analysis (INAA) and inductively coupled plasma isotope dilution mass spectrometry (ICP-IDMS) and for its isotope ratio using INAA and ICP-IDMS. Excellent agreement between the results of the different independent methods was found. In the present work, the measurements of the homogeneity of the areal density of Sb, previously determined with RBS in spots having 1 mm diameter, are improved with synchrotron X-ray fluorescence analysis: Higher precision in even smaller sample spots allows to estimate a reduced inhomogeneity of the whole batch of samples of the order of only 0.4%. Thus the uncertainty of the certified value can further be reduced. Down to fractions of a chip with 0.3×0.4 mm2 area, the areal density is now certified as (4.81±0.06)×1016 Sb atoms/cm2, where the expanded uncertainty 0.06 (coverage factor k=2) corresponds to only 1.2%. The relative merits of the different analytical methods are discussed.
The first hard x-ray beamline at BESSY II has been installed by BAM and PTB at a superconducting 7 T wavelength shifter. The main optical elements of the beamline are a double-multilayer monochromator and a double-crystal monochromator. Depending on the application, the two devices are used separately or in-line. The main applications of the monochromatic radiation with photon energies up to 60 keV are x-ray fluorescence analysis, micro computed tomography, x-ray topography, detector calibration and reflectometry. Calculable undispersed radiation up to 200 keV is available for radiometric applications.
Three effects have been observed in wet-thermally grown structures under bombardement with energetic 15N ions: (1) Out-diffusion of H from the SiO2/Si system through the surface, (2) Accumulation of H at the SiO2/Si interface, (3) Changes in the optical fingerprint spectra of Ψ and Δ in dependence on λ (wavelength) obtained by ellipsometric measurements.
Using a quadrupole mass spectrometer system the permeation of D2, He, Ne, Ar, Kr and Xe through EPDM (ethylene-propylene-diene rubber), Viton (fluoro rubber) and Silicone-rubber was measured as a function of temperature. The results for O-ring samples were compared with those for slab geometry. From the measured permeation functions the diffusion coefficients, the permeation coefficients and the solubilities of the gases in the elastomer materials were evaluated using a nonlinear fitting algorithm. The variations of these data with temperature yield the activation energies for diffusion and permeation as well as the heat of solution. The results confirm that the transmission of noble gases and of deuterium through elastomer materials is merely a physical process because the activation energies are far below common values for processes involving chemical reactions. The solubilities correlate well with the boiling temperatures of the gases and with the well depth of the Lennard-Jones interaction potential between the gas atoms. The diffusion coefficients monotonically decrease and the activation energies monotonically increase with increasing molecular diameter of the gases.