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Fluorescent semiconductor nanocrystals, also known as quantum dots (QDs), enabled many advancements in biotechnology, photovoltaics, photocatalysis, quantum computing and display devices. The high versatility of this nanomaterial is based on their unique size-tunable photoluminescence properties, which can be adjusted from the visible to the near-infrared range. In contrast to other nanomaterials, QDs made the transition from a laboratory curiosity to the utilization in commercial products, like the QLED television screen or in smartphone displays. The best investigated QDs are composed of heavy metals like cadmium or lead, which is not the best choice in terms of toxicity and environmental pollution. A more promising material is Indium Phosphide (InP), which is also currently used by Samsung, Sony and co. in the QLED displays.
In this contribution, I would like to give you a sneak peek behind the curtains of nanomaterial synthesis and show how this material is produced, how to stabilize their structural properties, and assess their toxicity in environmentally relevant conditions. Furthermore, I would like to present a synthesis method to accomplish the last open challenge in display technology of a blue luminescent LED based on QDs by introducing a new element to the InP QDs.
Quaternary semiconductor nanocrystals like AgInS2-ZnS solid solution quantum dots (QDs) are a highly promising material for material science and biomedical applications due to their tunable photoluminescence (PL), their high quantum yields (QY), and their low cytotoxicity1. A red shift of the PL into the NIR and SWIR region could further increase their application potential. Copper doping has been proven to be a suitable approach for bathochromically shifting the PL of QDs2. The synthesis of copper doped AgInS2-ZnS QDs from a single-source-precursor should enable an easily scalable synthesis with high reproducibility.
Towards an industrial laser doping process for the selective emitter using phosphoric acid as dopant
(2011)
Different laser supported approaches have already been realized, proving the great potential of laserdoped selective emitters (LDSE). However, it is challenging to establish a low-cost process by using pulsed laser tools. So far a single-step process only leads to satisfying results utilizing cw-lasers. In this paper we have examined a two-step process to produce laser-doped selective emitters on multicrystalline textured standard silicon photovoltaic wafers (90-Ω/sq-Emitter, SiN-antireflection coating (ARC)). The precise ARC removal by near-infrared fs-laser pulses (30 fs, 800 nm), and the doping of uncoated silicon wafers by ns-laser pulses (8 ns, 532 nm) were systematically investigated. In the fs-experiment, optimum conditions for ARC removal were identified. In the nsexperiments under suitable conditions (melting regime), the phosphorous concentration underneath the wafer surface was significantly increased and the sheet resistance was reduced by nearly a factor of two. Moreover, electrical measurements on fired metallization fingers deposited on the laser processed wafers showed low contact resistances. Hence, wafer conditioning with combined fs-laser- and ns-laser-processes are expected to be a promising technology for producing selective emitters.
The selective emitter is a well-known technology for producing highly doped areas under the metallization grid to improve the solar cell performance. In this work, the influence of laser irradiation on phosphoric acid coated multicrystalline silicon PV-wafers on the wafer surface structure, the phosphorous depth distribution and the electrical contact resistance within the laser treated area as well as the electrical series resistance of laserprocessed solar cells was evaluated. Different laser processing settings were tested including pulsed and continuous wave (cw) laser sources (515 nm, 532 nm, 1064 nm wavelength). Complementary numerical simulations using the finite element method (FEM) were conducted to explain the impact of the laser parameters on the melting behavior (melt duration and geometry). It was found that the melt duration is a key parameter for a successful laser Doping process. Our simulations at a laser wavelengths of 515 nm reveal that low-repetition rate (<500 kHz) laser pulses of 300 ns duration generate a melt duration of ~0.35 µs, whereas upon scanning cw-laser radiation at 532 nm prolongates the melt duration by at least one order of magnitude. Experimentally, the widely used ns-laser pulses did not lead to satisfying laser irradiation results. In contrast, cw-laser radiation and scan velocities of less than 2 m/s led to suitable laser doping featuring low electrical resistances in the laser treated areas.