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A study on the bonding structure and mechanical properties of magnetron sputtered CNx thin films
(2001)
Carbon nitride (CNx) films have been deposited by reactive (RF) magnetron sputtering, in order to investigate the effect of the energetic ion bombardment during deposition (IBD), in terms of applied Vb, on their bonding structure. Fourier Transform IR Ellipsometry (FTIRE) and X-ray photoelectron spectroscopy (XPS) were used for the investigation of the films bonding structure, while their mechanical properties were evaluated by nanoindentation measurements. At films grown with low negative Vb, (low energy IBD) the N atoms are distributed homogeneously in substitutional sites in graphitic rings through both sp2 and sp3 bonds and in linear chains, through sp2 bonds. In contrast, the high negative Vb (high energy IBD) has been suggested to promote the non-homogeneous N distribution at localized regions in the films where the formation of sp3 C---N bonds is favored. This behavior was also evidenced by the C1s and N1s XPS peak components, assigned to the sp3 and sp2 carbonnitrogen bonds. Also, high energy IBD films revealed increased values of hardness and elasticity, while hardness values up to 45 GPa were measured at localized regions.
Decorative optical coatings
(1994)
A Round Robin (RR) exercise on selected coated materials has been carried out with the aim of finding the optimal conditions for the analysis of nitride layers with GD-OES. Such pre-normative work is necessary for the evaluation of parallel development of the production of nitride layers as certified reference materials (CRMs). Two types of samples, TiN layer and VN layer, respectively, with chemical compositions close to stoichiometry and a thickness of ~3 µm, deposited on a steel substrate, have been provided to the RR participants. Additionally, another type of sample, a (100 nm CrNi/100 nm Cu) multilayer (ML) stack deposited on silicon wafer has also been included in the RR. This sample can be used as a CRM for checking GD spectrometer conditions and it has been proved helpful in further development of GDS instrumentation and methodology. The RR exercise has been performed in the frame of the EC Thematic Network on Glow Discharge Spectroscopy for Spectrochemical Analysis (GDS-Net).
Scaling of phonon frequencies and electron binding energies with interatomic distances in InxGa1−xN
(2021)
In-K-edge x-ray absorption fine structure (EXAFS), x-ray photoelectron, and Raman spectroscopy results are combined for a comprehensive study of InxGa1−xN layers with energy gaps extending over nearly the whole visible spectrum. The In–N and In–(In,Ga) distances determind by EXAFS are used for the derivation of the In–N bond ionicity as well as for the phonon frequency dependence of the LO and B21 modes, assessed by Raman, and the N 1s, In 3d5/2, Ga 3s, and Ga 2p1/2 electron binding energies on those distances. Phonon confinement due to perturbation of the periodic potential caused by the alloying is also quantified.
Nitrogen-rich noble metal nitrides possess unique mechanical and catalytic properties, therefore their synthesis and characterization is of interest for fundamental solid state chemistry and materials science. In this study we have synthesized a singlesource precursor [Rh(NH3)6]3(N3)5Cl4 (Rh:N ratio 1:11). Its controlled decomposition in a laser-heated diamond anvil cell at 39 GPa resulted in a formation of rhodium pernitride, RhN2. According to the results of single-crystal X-ray diffraction RhN2 has arsenopyrite structure type crystal structure previously unknown for this compound (P21/c (no. 14).