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The present study repeats electron probe microanalysis (EPMA) measurements with the thin film analysis software Stratagem on an Fe-Ni thin films on silicon and reports - for the first-time – results of analysis on Si-Ge thin films deposited on a non-conductive aluminium oxide substrate.
If the very good EPMA/Stratagem results for the FeNi system were expected due to previous studies [2], the data obtained for the SiGe films are particularly valuable, because of the challenging insulator substrate of Al2O3. The conductivity of the Si1-xGex surface necessary for charging-free analysis was ensured by applying conductive copper tape onto film surface down to sample stage. Four accelerating voltages, 15, 20, 25 and 30 kV, have been applied, so that the Ge Kα X-ray line at 9.87 keV could be excited.
Various applications such as automotive catalysts, photocatalysis and sensors rely on thin coatings with high active surface area. The development of new and improved coatings requires in-depth understanding of the film morphology and texture. Especially the film porosity is a key parameter to identify structure-property relationships in applications. However, an accurate porosity determination of thin porous coatings is a challenging. In this contribution we present and discuss a new approach for determining the porosity of films by x-rays at SEM.