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The present work shows results on elemental distribution analyses in Cu(In,Ga)Se2 thin films for solar cells performed by use of wavelength-dispersive and energy-dispersive X-ray spectrometry (EDX) in a scanning electron microscope, EDX in a transmission electron microscope, X-ray photoelectron, angle-dependent soft X-ray emission, secondary ion-mass (SIMS), time-of-flight SIMS, sputtered neutral mass, glow-discharge optical emission and glow-discharge mass, Auger electron, and Rutherford backscattering spectrometry, by use of scanning Auger electron microscopy, Raman depth profiling, and Raman mapping, as well as by use of elastic recoil detection analysis, grazing-incidence X-ray and electron backscatter diffraction, and grazing-incidence X-ray fluorescence analysis. The Cu(In,Ga)Se2 thin films used for the present comparison were produced during the same identical deposition run and exhibit thicknesses of about 2 µm. The analysis techniques were compared with respect to their spatial and depth resolutions, measuring speeds, availabilities, and detection limits.
Depth profiles of layer systems consisting of different film materials and having different thicknesses are of great practical importance. Multilayer reference coatings of conducting (Ti/Al) and non-conducting (SiO2/Si3N4) material are analyzed with Auger electron spectroscopy (AES) and glow discharge optical emission spectroscopy (GDOES) depth profiling. Deposition techniques, physical vapor deposition for Ti/Al layers and plasma-enhanced chemical vapor deposition for SiO2/Si3N4 layers, as well as measurement and testing procedures for the determination of layer thickness such as optical and mechanical stylus and spectroscopie ellipsometry are discussed. GDOES depth profiles in direct current (d.c.) and radio frequency (r.f.) mode are related to measurements of crater profiles and compared with line scans and depth profiles performed by AES. It is shown that such multilayer reference systems are appropriate for calibration of depth profiles, i.e. the definition and the evaluation of the depth resolution at the interface, the determination of sputter rates both for d.c.- and r.f.-GDOES and AES, the optimization of the conditions of analysis, and the quantification of analysis itself.
Synchrotron-radiation XPS analysis of ultra-thin silane films: Specifying the organic silicon
(2016)
The analysis of chemical and elemental in-depth variations in ultra-thin organic layers with thicknesses below 5 nm is very challenging. Energy- and angle-resolved XPS (ER/AR-XPS) opens up the possibility for non-destructive chemical ultra-shallow depth profiling of the outermost surface layer of ultra-thin organic films due to its exceptional surface sensitivity. For common organic materials a reliable chemical in-depth analysis with a lower limit of the XPS information depth z95 of about 1 nm can be performed. As a proof-of-principle example with relevance for industrial applications the ER/AR-XPS analysis of different organic monolayers made of amino- or benzamidosilane molecules on silicon oxide surfaces is presented. It is demonstrated how to use the Si 2p core-level region to non-destructively depth-profile the organic (silane monolayer) inorganic (SiO2/Si) interface and how to quantify Si species, ranging from elemental silicon over native silicon oxide to the silane itself. The main advantage of the applied ER/AR-XPS method is the improved specification of organic from inorganic silicon components in Si 2p core-level spectra with exceptional low uncertainties compared to conventional laboratory XPS.
The growing interest in artificial bioorganic Interfaces as a platform for applications in emerging Areas as personalized medicine, clinical diagnostics, biosensing, biofilms, prevention of biofouling, and other fields of bioengineering is the origin of a need for in Detail multitechnique characterizations of such layers and interfaces. The in-depth analysis of biointerfaces is of special interest as the properties of functional bioorganic coatings can be dramatically affected by in-depth variations of composition.
In worst cases, the functionality of a device produced using such coatings can be substantially reduced or even fully lost.
Analytical routines for a comprehensive in-depth morphological, structural, and chemical characterization of functionalized TiO2 films by using different state-of-the-art analytical techniques are presented and discussed with the main objective to identify potential reference TiO2 coating parameters able to be certified at a later stage. TiO2 films fabricated by two different synthetic procedures as representative for two main large-scale applications were selected: (i) pulsed d.c. magnetron sputtering for photocatalytic applications and (ii) screen printing from preformed anatase nanoparticles. The screen-printed films were further loaded with a sensitizing dye for application as a dye-sensitized solar cell. Film properties such as microstructure and crystallographic texture of pulsed d.c. magnetron sputtering synthesized films were systematically studied by means of scanning nanobeam electron diffraction in a transmission electron microscope and the surface and inner morphology by scanning electron microscopy. The dye distribution over the depth of screen-printed TiO2 layers was analyzed before and after dye-loading by means of energy dispersive X-ray spectroscopy at scanning electronmicroscope, Auger electron spectroscopy and time-of-flight secondary ion mass spectrometry. The long-term goal of the present study is the improvement of quality of the TiO2 film parameters as measured by using different types of reference TiO2 coatings having specific parameters certified.
Hydrogen is present in anhydrous materials as a result of their synthesis and of their environment during conservation. IBA provides techniques to measure H concentration depth profiles allowing to identify various aspects of the materials including the history of objects such as gemstones used in cultural heritage.
A newly established ERDA set-up, using an external microbeam of alpha particles, has been developed to study hydrated near-surface layers in quartz and sapphire by non-destructive H depth profiling in different atmospheres. The samples were also analysed using resonant NRA and SIMS.
In many areas of material sciences, hydrogen analysis is of particular importance. For example, hydrogen is most abundant as impurity in thin film materials depending on the deposition process and has great influence on the chemical, physical and electrical properties of many materials. Existing bulk reference materials (RMs) are not suited for surface sensitive analytical methods like elastic recoil detection analysis (ERDA) or nuclear reaction analysis (NRA). To overcome this serious lack of (certified) thin-layer reference materials for the determination of hydrogen in the near-surface region (12 µm depth), we produced stable, homogeneous amorphous silicon layers on Si-wafers (aSi:HSi) by means of chemical vapour deposition (CVD), while about 10% of hydrogen was incorporated in the Si-layer. Homogeneity and stability were proved by NRA whereas traceability of reference values has been assured by an international interlaboratory comparison.