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In contact with aqueous media glass tends to corrode leading to different surface properties. For the precision application this alteration might cause product failure. Hence precise knowledge of the surface interactions is essential. We performed an extensive investigation on the behavior of borosilicate glass under corrosive attack in order to identify critical processes. We identified appropriate investigation methods including sequential chemical analysis, ATR-IR, ellipsometry and SNMS. These techniques allow to identify the influence of specific production processes.
Imaging and small-spot (small area) XPS have become increasingly important components of surface chemical analysis during the last three decades, and its use is growing. Some ambiguity in the use of terminology, understanding of concepts, and lack of appropriate reference materials leads to confusing and not always reproducible data. In this paper, it is shown that by using existing knowledge, appropriate test specimens, and standardized approaches, problems of comparability and such reproducibility issues recently observed for XPS data reported in the scientific literature can be overcome. The standardized methods of ISO 18516:2019, (i) the straight-edge, (ii) the narrow-line, and (iii) the grating method, can be used to characterize and compare the lateral resolution achieved by imaging XPS instruments and are described by reporting examples. The respective measurements are made using new test specimens. When running an XPS instrument in the small-spot (small area) mode for a quantitative analysis of a feature of interest, the question arises as to what contribution to the intensity originates from outside the analysis area. A valid measurement approach to control the intensity from outside the nominal analysis area is also described. As always, the relevant resolution depends on the specific question that needs to be addressed. The strengths and limitations of methods defining resolution are indicated.
ISO 18516:2019 Surface chemical analysis—Determination of lateral resolution and sharpness in beam-based methods with a range from nanometres to micrometres revises ISO 18516:2006 Surface chemical analysis—Auger electron spectroscopy and X-ray photoelectron spectroscopy—Determination of lateral resolution. It implements three different methods delivering parameters useful to express the lateral resolution: (1) the straight edge method, (2) the narrow line method and (3) the grating method. The theoretical background of these methods is introduced in ISO/TR 19319:2013 Surface chemical analysis—Fundamental approaches to determination of lateral resolution and sharpness in beam-based methods. The revised International Standard ISO 18516 delivers standardized procedures for the determination of the (1) effective lateral resolution by imaging of square-wave gratings, the (2) lateral resolution expressed as the parameter D12–88 characterizing the steepness of the sigmoidal edge spread function (ESF) determined by imaging a straight edge and (3) the lateral resolution expressed as the full width of half maximum of the line spread function (LSF), wLSF, determined by imaging a narrow line. The last method also delivers information on the shape of the LSF, which characterizes an individual imaging instrument. Finally, the implementation of all three standardized methods in the field of imaging laboratory X-ray photoelectron spectroscopy (XPS) is shortly presented. This part of the letter is based on the use of a new test sample developed at ETH Zurich, Switzerland. This test sample displays a micrometre scaled pattern motivated by the resolving power of recent imaging XPS instruments.
Small-area/spot photoelectron spectroscopy (SAXPS) is a powerful tool for the investigation of small surface features like microstructures of electronic devices, sensors or other functional surfaces, and so forth. For evaluating the quality of such microstructures, it is often crucial to know whether a small signal in a spectrum is an unwanted contamination of the field of view (FoV), defined by the instrument settings, or it originated from outside. To address this issue, the d80/20 parameter of a line scan across a chemical edge is often used. However, the typical d80/20 parameter does not give information on contributions from the long tails of the X-ray beam intensity distribution or the electron-optical system as defined by apertures. In the VAMAS TWA2 A22 project “Applying planar, patterned, multi-metallic samples to assess the impact of analysis area in surface-chemical analysis,” new test specimen was developed and tested. The here presented testing material consists of a silicon wafer substrate with an Au-film and embedded Cr circular and square spots with decreasing dimensions from 200 μm down to 5 μm. The spot sizes are traceable to the length unit due to size measurements with a metrological SEM. For the evaluation of the FoV, we determined the Au4f intensities measured with the center of the FoV aligned with the center of the spot and normalized to the Au4f intensity determined on the Au-film. With this test specimen, it was possible to characterize, as an example, the FoV of a Kratos AXIS Ultra DLD XPS instrument.
Visualization of surface modifications may be very challenging for coating/substrate systems of either almost identical optical constants, e.g. transparent films on substrates of the same material, or minor film thickness, substance quantity and affected area, e.g. ultra-thin or island films. Methods for visualization are optical microscopy (OM), imaging ellipsometry (IE), and referenced spectroscopic ellipsometry (RSE). Imaging ellipsometry operates at oblique incidence near Brewster angle of the bare, clean or unmodified substrate. In this configuration, reflected intensities are rather weak. However, the contrast to add-on and sub-off features may be superior. Referenced spectroscopic ellipsometry operates in a two-sample configuration but with much higher intensities. In many cases, both ellipsometric techniques reveal and visualize thin films, printed-pattern, laser-induced changes, and impurities better than optical microscopy. In particular for stratified homogeneous modifications, ellipsometric techniques give access to modelling and hence thickness determination. Modifications under investigation are polymer foil residue on silicon, laser-induced changes of ta-C:H coatings on 100Cr6 steel, imperfections of ta-C:H on thermal silicon oxide, degradation of glass, thin film tin oxide pattern on silicon, printed and dried pattern of liquids such as deionized water, cleaning agents, and dissolved silicone. © 2016 Elsevier B.V. All rights reserved.
Industrial quality control (QC) nowadays requires the visualization of surface modifications from the macro-scopic to the microscopic or even nanoscopic scale. This is a prerequisite to the evaluation of functionality and reliability, the detection of defects and their separation of artefacts. The diversity of applications ranges from low-E glazings and solar panels, micro- and optoelectronics, micro- and smart devices to sensor-on-chip and lab-on-chip systems [1]. Optical microcopy (light, confocal laser scanning, white light interference) as established QC-tool is operated at normal incidence, i.e. p- and s-polarization are undistinguishable. Either light-intensity in terms of grey scale and colour or intensity-correlated effects of phase shifts are used. In case of ellipsometry, operated at oblique incidence, p- and s-polarization matter, and amplitude ratios and phase shifts upon reflection are measured. Hence, information content must be much higher.
The visualization of surface modifications may be very challenging for coating/substrate systems of either al-most identical optical constants, e.g. transparent films on substrates of the same material, or minor film thick-ness, substance quantity and affected area, e.g. ultra-thin or island films. Ellipsometry gives access to the con-trast of intensity (I), amplitude ratio (Ψ), and phase shift (Δ) with nanometer-scaled vertical and micrometer-scaled lateral sensitivity, one is able to identify tiny changes within an unmodified surface. As both mapping ellipsometry (ME) and imaging ellipsometry (IE) are operated in the optical far-field, surface inspection is also possible on the macroscopic scale. Near the Brewster-angle of the bare, undamaged, clean, and fresh substrate, the contrast to add-on and sub-off features is superior.
Fig. 1 shows three examples of ellipsometric imaging, i.e. a thin SnO:Ni film on SiO2/Si (Fig. 1a), a dried stain of an anti-body solution on cyclo-olefin-polymer (COP) shown in Fig. 1b, and a polyimide film residue on SiO2/Si (Fig. 1c). For all of these examples, ellipsometry provides much better contrast between substrate and surface modification than optical microscopy, sometimes primarily caused by the oblique incidence (Figs. 1a and 1c), in other cases related to the phase sensitivity of ellipsometry (Fig. 1b). Other examples are laser surface modifications and the corrosion of glass. In these cases, optical microscopy and IE yield to similar results, how-ever only ellipsometry gives access to modelling.
Further investigated coating/substrate systems are 100Cr6 steel, native oxide on silicon, borosilicate glass, and the polymer polycarbonate with deposited films of graphene and ta-C:H, printed and dried pattern of liquids such as water, cleaning agents, and dissolved silicone. Besides imaging ellipsometry, referenced spectral ellipsometry (RSE) has been applied, combining the advantages of both optical microscopy (fast measurement) and ellipsometry (high sensitivity to tiny modifications).
The paper addresses the “Conventional Single-Sample vs. Multiple-Sample Hardness Testing: Hardness Testing Machine vs. Centrifuge” and the follow points are discussed in more detail: Principle of the centrifuge test, components of the centrifuge test, indenter geometries, microscopic measurement of Brinell and Vickers indents, and hardness testing: conventional vs. centrifuge.
Small-area/spot photoelectron spectroscopy (SAXPS) is a powerful tool for the investigation of small surface features like microstructures of electronic devices, sensors or other functional surfaces. For evaluating the quality of such microstructures, it is crucial to know whether a small signal in a spectrum is an unwanted contamination of the field of view (FoV), defined by the instrument settings, or it originated from outside. The aperture has a major influence on the signal-contribution from the outside. For the evaluation of the FoV, we determined the Au4f intensities measured with the center of the FoV aligned with the center of the spot and normalized to the Au4f intensity determined on the Au-film. With this test specimen, it was possible to characterize the FoV: The signal-contribution from the outside is reduceable down to lower than 50 %, when the aperture is 30 % of the structure dimension for our Kratos AXIS Ultra DLD system.
Small-area/spot photoelectron spectroscopy (SAXPS) is a powerful tool for the investigation of small surface features like microstructures of electronic devices, sensors or other functional surfaces. For evaluating the quality of such microstructures, it is crucial to know whether a small signal in a spectrum is an unwanted contamination of the field of view (FoV), defined by the instrument settings, or it originated from outside. The aperture has a major influence on the signal-contribution from the outside. For the evaluation of the FoV, we determined the Au4f intensities measured with the center of the FoV aligned with the center of the spot and normalized to the Au4f intensity determined on the Au-film. With this test specimen, it was possible to characterize the FoV: The signal-contribution from the outside is reduceable down to lower than 50 %, when the aperture is 30 % of the structure dimension for our Kratos AXIS Ultra DLD system.
Small Area Photoelectron Spectroscopy (XPS) is a powerful tool for investigating small surface features. It is often unclear, if the signal in the spectrum is an unwanted contamination of the Field of View (FoV) or is it originated from outside. The reason is, that XPS-spectra are affected by beam shapes. Scheithauer proposed to measure Pt apertures of different diameters and normalize the Pt4f count rate by a second measurement on the Pt metal. New reference materials were developed and tested in the VAMAS TWA2 A22 Project.