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Chemical Analysis of Commercial Functionalized Graphene Nanoplatelets along the Production Process with Raman Spectroscopy and X-ray Photoelectron Spectroscopy

  • Commercial applications increasingly rely on functionalized graphene nanoplatelets (GNPs) supplied as powders, aqueous suspensions, and printable inks, yet their process−structure−property relationships across the production chain remain to be fully mapped. Here we apply a correlative Raman spectroscopy (Raman) and X-ray photoelectron spectroscopy (XPS) workflow to nine independent industrial graphene batches spanning three surface chemistries, raw (R), fluorinated (F), and nitrogen-functionalized (N), in all three physical forms which are powders, suspensions, and inks. Raman mapping (with a 532 nm excitation laser) showed that I2D/IG is highest for N samples and lowest for R-ink. A 2D-vs-G correlation places all samples on a trajectory parallel to the pure-doping vector, which can correlate to holes in the graphene lattice. The mean point-defect spacing is LD = 8.4−10.0 nm. High-resolution XPS resolves the accompanying chemical changes: F-powder exhibits distinct C−F (289 eV), C−F2Commercial applications increasingly rely on functionalized graphene nanoplatelets (GNPs) supplied as powders, aqueous suspensions, and printable inks, yet their process−structure−property relationships across the production chain remain to be fully mapped. Here we apply a correlative Raman spectroscopy (Raman) and X-ray photoelectron spectroscopy (XPS) workflow to nine independent industrial graphene batches spanning three surface chemistries, raw (R), fluorinated (F), and nitrogen-functionalized (N), in all three physical forms which are powders, suspensions, and inks. Raman mapping (with a 532 nm excitation laser) showed that I2D/IG is highest for N samples and lowest for R-ink. A 2D-vs-G correlation places all samples on a trajectory parallel to the pure-doping vector, which can correlate to holes in the graphene lattice. The mean point-defect spacing is LD = 8.4−10.0 nm. High-resolution XPS resolves the accompanying chemical changes: F-powder exhibits distinct C−F (289 eV), C−F2 (292 eV), and C−F3 (293 eV) components and loses roughly half its F content upon dispersion in deionized water or ink formulation; inks of all chemistries show a pronounced O−C=O peak near 289−290 eV originated from the ink compounds. N-functionalized samples showed a prominent C−N (285.5 eV) only for the ink formulated N-functionalized sample. This study establishes a process-aware blueprint linking the functionalization route and formulation step to lattice disorder and surface chemistry, offering transferable quality-control metrics for graphene supply chains in industrial products/applications such as coatings, storage devices, and printed electronics.zeige mehrzeige weniger

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Autor*innen:Loay Akmal MadboulyORCiD, Heinz SturmORCiD, Alexander Doolin, Vasile-Dan HodoroabaORCiD, Jörg RadnikORCiD
Dokumenttyp:Zeitschriftenartikel
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):The Journal of Physical Chemistry C
Jahr der Erstveröffentlichung:2025
Organisationseinheit der BAM:6 Materialchemie
6 Materialchemie / 6.1 Oberflächen- und Dünnschichtanalyse
Veröffentlichende Institution:Bundesanstalt für Materialforschung und -prüfung (BAM)
Verlag:American Chemical Society (ACS)
Jahrgang/Band:129
Ausgabe/Heft:50
Erste Seite:22033
Letzte Seite:22040
DDC-Klassifikation:Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten
Freie Schlagwörter:Chemical analysis; Functionalized graphene; Raman Spectroscopy; XPS
Themenfelder/Aktivitätsfelder der BAM:Material
Material / Advanced Materials
DOI:10.1021/acs.jpcc.5c06820
URN:urn:nbn:de:kobv:b43-652548
ISSN:1932-7447
Verfügbarkeit des Dokuments:Datei für die Öffentlichkeit verfügbar ("Open Access")
Lizenz (Deutsch):License LogoCreative Commons - CC BY - Namensnennung 4.0 International
Datum der Freischaltung:22.12.2025
Referierte Publikation:Ja
Datum der Eintragung als referierte Publikation:22.12.2025
Schriftenreihen ohne Nummerierung:Wissenschaftliche Artikel der BAM
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