Zitieren Sie bitte immer diesen URN: urn:nbn:de:kobv:b43-358594
Industrially scalable and cost-effective Mn2+ doped ZnxCd1-xS/ZnS nanocrystals with 70% photoluminescence quantum yield, as efficient down-shifting materials in photovoltaics
- We present colloidally stable and highly luminescent ZnxCd1_xS:Mn/ZnS core–shell nanocrystals (NCs) synthesized via a simple non-injection one-pot, two-step synthetic route, which can be easily upscaled. A systematic variation of the reaction component, parameters and thickness of the ZnS shell yielded doped nanocrystals with a very high photoluminescence quantum yield (pl) of 70%, which is the highest value yet reported for these Mn-doped sulfide-semiconductor NCs. These materials can be synthesized with high reproducibility in large quantities of the same high quality, i.e., the same pl using accordingly optimized reaction conditions. The application of these zero-reabsorption high quality NCs in the light conversion layers, deposited on top of a commercial monocrystalline silicon (mono-Si) solar cell, led to a significant enhancement of the external quantum efficiency (EQE) of this device in the ultraviolet spectral region between 300 and 400 nm up to ca. 12%. EQE enhancement isWe present colloidally stable and highly luminescent ZnxCd1_xS:Mn/ZnS core–shell nanocrystals (NCs) synthesized via a simple non-injection one-pot, two-step synthetic route, which can be easily upscaled. A systematic variation of the reaction component, parameters and thickness of the ZnS shell yielded doped nanocrystals with a very high photoluminescence quantum yield (pl) of 70%, which is the highest value yet reported for these Mn-doped sulfide-semiconductor NCs. These materials can be synthesized with high reproducibility in large quantities of the same high quality, i.e., the same pl using accordingly optimized reaction conditions. The application of these zero-reabsorption high quality NCs in the light conversion layers, deposited on top of a commercial monocrystalline silicon (mono-Si) solar cell, led to a significant enhancement of the external quantum efficiency (EQE) of this device in the ultraviolet spectral region between 300 and 400 nm up to ca. 12%. EQE enhancement is reflected by an increase in the power conversion efficiency (PCE) by nearly 0.5 percentage points and approached the theoretical limit (0.6%) expected from down-shifting for this Si solar cell. The resulting PCE may result in a BoM (bill of materials) cost reduction of app. 3% for mono-Si photovoltaic modules. Such small but distinct improvements are expected to pave the road for an industrial application of doped semiconductor NCs as cost-effective light converters for silicon photovoltaic (PV) and other optoelectronic applications.…
Autor*innen: | I. Levchuk, Christian WürthORCiD, F. Krause, A. Osvet, M. Batentschuk, Ute Resch-GengerORCiD, C. Kolbeck, P. Herre, H.P. Steinrück, W. Peukert, C. J. Brabec |
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Dokumenttyp: | Zeitschriftenartikel |
Veröffentlichungsform: | Verlagsliteratur |
Sprache: | Englisch |
Titel des übergeordneten Werkes (Englisch): | Energy & Environmental Science |
Jahr der Erstveröffentlichung: | 2016 |
Veröffentlichende Institution: | Bundesanstalt für Materialforschung und -prüfung (BAM) |
Verlag: | The Royal Society of Chemistry |
Verlagsort: | Cambridge, England |
Jahrgang/Band: | 9 |
Erste Seite: | 1083 |
Letzte Seite: | 1094 |
DDC-Klassifikation: | Naturwissenschaften und Mathematik / Chemie / Analytische Chemie |
Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten | |
Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Angewandte Physik | |
Freie Schlagwörter: | nanocrystals; photoluminescence quantum yield; photovoltaics; solar cell |
DOI: | 10.1039/c5ee03165f |
URN: | urn:nbn:de:kobv:b43-358594 |
Verfügbarkeit des Dokuments: | Datei für die Öffentlichkeit verfügbar ("Open Access") |
Lizenz (Deutsch): | Creative Commons - Namensnennung-Nicht kommerziell |
Datum der Freischaltung: | 28.04.2016 |
Referierte Publikation: | Ja |
Datum der Eintragung als referierte Publikation: | 28.04.2016 |