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Thickness Profiling of the Superficial Amorphization and Re-Crystallization of Silicon Induced by Femtosecond Laser Pulses

  • Crystalline Silicon undergoes a complex phase-change dynamic of melting, amorphization, ablation and re-crystallization upon irradiation with high intensity ultra-short laser pulses [1]. The final state of such a modified surface spot depends on many factors, most notably the local fluence and the surface’s crystal orientation. In this study, we induced superficial structure and phase changes in Silicon <111> and <100> wafers using single femtosecond laser pulses (790 nm, 30 fs) for a range of different peak fluences. The resulting surface modifications were studied in great detail using a number of different techniques, including spectroscopic imaging ellipsometry (SIE), atomic force microscopy, high-resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray spectroscopy within scanning transmission electron microscopy (STEM-EDX). Playing a pivotal role in this work, SIE provided non-destructive measurements for the calculation of the radial amorphousCrystalline Silicon undergoes a complex phase-change dynamic of melting, amorphization, ablation and re-crystallization upon irradiation with high intensity ultra-short laser pulses [1]. The final state of such a modified surface spot depends on many factors, most notably the local fluence and the surface’s crystal orientation. In this study, we induced superficial structure and phase changes in Silicon <111> and <100> wafers using single femtosecond laser pulses (790 nm, 30 fs) for a range of different peak fluences. The resulting surface modifications were studied in great detail using a number of different techniques, including spectroscopic imaging ellipsometry (SIE), atomic force microscopy, high-resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray spectroscopy within scanning transmission electron microscopy (STEM-EDX). Playing a pivotal role in this work, SIE provided non-destructive measurements for the calculation of the radial amorphous layer-thickness profiles of the irradiated spots using a two-layer thin-film model (Silicon dioxide and amorphous Silicon on a crystalline Silicon substrate). The measurements further allowed for the analysis of the oxide-layer modifications induced by the laser treatment. The results of the SIE-calculations were cross-checked by an in-depth material lamella via HRTEM and STEM-EDX.zeige mehrzeige weniger

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Metadaten
Autor*innen:M. Duwe
Koautor*innen:C. Florian, Daniel Fischer, K. Freiberg, Mario Sahre, S. Schneider, Andreas Hertwig, Jörg Krüger, M. Rettenmayr, Uwe Beck, A. Undisz, Jörn Bonse
Dokumenttyp:Vortrag
Veröffentlichungsform:Präsentation
Sprache:Englisch
Jahr der Erstveröffentlichung:2021
Organisationseinheit der BAM:6 Materialchemie
6 Materialchemie / 6.2 Material- und Oberflächentechnologien
6 Materialchemie / 6.7 Materialsynthese und Design
DDC-Klassifikation:Naturwissenschaften und Mathematik / Chemie / Analytische Chemie
Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten
Freie Schlagwörter:Ablation; Amorphization; Femtosecond Laser; Re-crystallization; Spectroscopic imaging ellipsometry
Themenfelder/Aktivitätsfelder der BAM:Chemie und Prozesstechnik
Material
Veranstaltung:11th Workshop Ellipsometry (WSE 11)
Veranstaltungsort:Steyr, Austria
Beginndatum der Veranstaltung:06.09.2021
Enddatum der Veranstaltung:08.09.2021
Verfügbarkeit des Dokuments:Datei im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:27.09.2021
Referierte Publikation:Nein
Eingeladener Vortrag:Nein
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