Thickness Profiling of the Superficial Amorphization and Re-Crystallization of Silicon Induced by Femtosecond Laser Pulses
- Crystalline Silicon undergoes a complex phase-change dynamic of melting, amorphization, ablation and re-crystallization upon irradiation with high intensity ultra-short laser pulses [1]. The final state of such a modified surface spot depends on many factors, most notably the local fluence and the surface’s crystal orientation. In this study, we induced superficial structure and phase changes in Silicon <111> and <100> wafers using single femtosecond laser pulses (790 nm, 30 fs) for a range of different peak fluences. The resulting surface modifications were studied in great detail using a number of different techniques, including spectroscopic imaging ellipsometry (SIE), atomic force microscopy, high-resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray spectroscopy within scanning transmission electron microscopy (STEM-EDX).
Playing a pivotal role in this work, SIE provided non-destructive measurements for the calculation of the radial amorphousCrystalline Silicon undergoes a complex phase-change dynamic of melting, amorphization, ablation and re-crystallization upon irradiation with high intensity ultra-short laser pulses [1]. The final state of such a modified surface spot depends on many factors, most notably the local fluence and the surface’s crystal orientation. In this study, we induced superficial structure and phase changes in Silicon <111> and <100> wafers using single femtosecond laser pulses (790 nm, 30 fs) for a range of different peak fluences. The resulting surface modifications were studied in great detail using a number of different techniques, including spectroscopic imaging ellipsometry (SIE), atomic force microscopy, high-resolution transmission electron microscopy (HRTEM), and energy dispersive X-ray spectroscopy within scanning transmission electron microscopy (STEM-EDX).
Playing a pivotal role in this work, SIE provided non-destructive measurements for the calculation of the radial amorphous layer-thickness profiles of the irradiated spots using a two-layer thin-film model (Silicon dioxide and amorphous Silicon on a crystalline Silicon substrate). The measurements further allowed for the analysis of the oxide-layer modifications induced by the laser treatment. The results of the SIE-calculations were cross-checked by an in-depth material lamella via HRTEM and STEM-EDX.…
Autor*innen: | M. Duwe |
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Weitere Person: | C. Florian, Daniel Fischer, K. Freiberg, Mario Sahre, S. Schneider, Andreas HertwigORCiD, Jörg KrügerORCiD, M. Rettenmayr, Uwe Beck, A. Undisz, Jörn BonseORCiD |
Dokumenttyp: | Vortrag |
Veröffentlichungsform: | Präsentation |
Sprache: | Englisch |
Jahr der Erstveröffentlichung: | 2021 |
Organisationseinheit der BAM: | 6 Materialchemie |
6 Materialchemie / 6.2 Material- und Oberflächentechnologien | |
6 Materialchemie / 6.7 Materialsynthese und Design | |
DDC-Klassifikation: | Naturwissenschaften und Mathematik / Chemie / Analytische Chemie |
Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten | |
Freie Schlagwörter: | Ablation; Amorphization; Femtosecond Laser; Re-crystallization; Spectroscopic imaging ellipsometry |
Themenfelder/Aktivitätsfelder der BAM: | Chemie und Prozesstechnik |
Material | |
Veranstaltung: | 11th Workshop Ellipsometry (WSE 11) |
Veranstaltungsort: | Steyr, Austria |
Beginndatum der Veranstaltung: | 06.09.2021 |
Enddatum der Veranstaltung: | 08.09.2021 |
Verfügbarkeit des Dokuments: | Datei im Netzwerk der BAM verfügbar ("Closed Access") |
Datum der Freischaltung: | 27.09.2021 |
Referierte Publikation: | Nein |
Eingeladener Vortrag: | Nein |