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Characterization of thin-film thickness

  • Analysis methods and instrumentation for obtaining optical parameters and thickness profiles of thin-film samples from spectrophotometric and ellipsometric measurements are presented. Measured samples include thermally grown and evaporated SiO2 on a silicon substrate and a polymer photoresist layer on silicon. Experimental results at multiple sample positions give the thickness uniformity and optical constants of thin films. The thickness results obtained with spectrophotometry and ellipsometry agree within 1 nm for the 300 nm thick layer of SiO2 on silicon. For the 1600 nm thick resist sample the agreement of the measurement methods is within 8 nm. For the sample with a nominally 6000 nm thick layer of SiO2 on silicon, there is a deviation of ~100 nm between the spectrophotometry and ellipsometry results. As an application, the optical parameters of a SiO2 layer on an induced junction silicon photodiode are determined by spectrophotometry and are used to confirm earlier values andAnalysis methods and instrumentation for obtaining optical parameters and thickness profiles of thin-film samples from spectrophotometric and ellipsometric measurements are presented. Measured samples include thermally grown and evaporated SiO2 on a silicon substrate and a polymer photoresist layer on silicon. Experimental results at multiple sample positions give the thickness uniformity and optical constants of thin films. The thickness results obtained with spectrophotometry and ellipsometry agree within 1 nm for the 300 nm thick layer of SiO2 on silicon. For the 1600 nm thick resist sample the agreement of the measurement methods is within 8 nm. For the sample with a nominally 6000 nm thick layer of SiO2 on silicon, there is a deviation of ~100 nm between the spectrophotometry and ellipsometry results. As an application, the optical parameters of a SiO2 layer on an induced junction silicon photodiode are determined by spectrophotometry and are used to confirm earlier values and uncertainties of the SiO2 refractive index and layer thickness non-uniformity.zeige mehrzeige weniger

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Metadaten
Autor*innen:S. Pourjamal, H. Mäntynen, P. Jaanson, Dana Maria Rosu, Andreas HertwigORCiD, F. Manoocheri, E. Ikonen
Dokumenttyp:Zeitschriftenartikel
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):Metrologia
Jahr der Erstveröffentlichung:2014
Verlag:Inst. of Physics Publ.
Verlagsort:Bristol
Jahrgang/Band:51
Ausgabe/Heft:6
Erste Seite:S302
Letzte Seite:S308
Freie Schlagwörter:Ellipsometry; Index of refraction; Silicon dioxide; Silicon photodiode; Spectrophotometry; Thin-film thickness
DOI:10.1088/0026-1394/51/6/S302
ISSN:0026-1394
ISSN:1681-7575
Verfügbarkeit des Dokuments:Physisches Exemplar in der Bibliothek der BAM vorhanden ("Hardcopy Access")
Bibliotheksstandort:Sonderstandort: Publica-Schrank
Datum der Freischaltung:20.02.2016
Referierte Publikation:Ja
Datum der Eintragung als referierte Publikation:11.03.2015
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