• Treffer 3 von 7
Zurück zur Trefferliste
Zitieren Sie bitte immer diese URN: urn:nbn:de:kobv:b43-370383

Determination of the elastic behavior of silicon nanowires within a scanning electron microscope

  • Three-point bending tests were performed on double-anchored, <110> silicon nanowire samples inside a scanning electron microscope (SEM) via a micromanipulator equipped with a piezo-resistive force sensor. Representing the upper and lower boundaries achievable in a consistent manner, silicon nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10-m-tall supports through a top-down fabrication approach involving a series of etching processes. Hence, no interface compliance was introduced between supports and nanowires. Exact nanowire dimensions and cross-sectional features were determined by transmission electron microscopy (TEM) following sample preparation through focused ion beam (FIB) machining. Conducting the experiments inside an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which was taken intoThree-point bending tests were performed on double-anchored, <110> silicon nanowire samples inside a scanning electron microscope (SEM) via a micromanipulator equipped with a piezo-resistive force sensor. Representing the upper and lower boundaries achievable in a consistent manner, silicon nanowires with widths of 35 nm and 74 nm and a height of 168 nm were fabricated. The nanowires were obtained monolithically along with their 10-m-tall supports through a top-down fabrication approach involving a series of etching processes. Hence, no interface compliance was introduced between supports and nanowires. Exact nanowire dimensions and cross-sectional features were determined by transmission electron microscopy (TEM) following sample preparation through focused ion beam (FIB) machining. Conducting the experiments inside an SEM chamber further raised the opportunity of the direct observation of any deviation from ideal loading conditions such as twisting, which was taken into consideration in simulations. Measured force-displacement behavior was observed to exhibit close resemblance to simulation results obtained by finite element modeling, when the bulk value of 169 GPa was taken as the modulus of elasticity for <110> silicon. Hence, test results show neither any size effect nor evidence of residual stresses for the considered nanoscale objects. The increased effect of the native oxide with reduced nanowire dimensions was captured as well. Thus this very simple in-situ testing method was found to be an alternative to elaborate AFM measurements on geometrically formidable nanostructures. The results demonstrate the applicability of the developed fabrication approach to the incorporation of silicon nanowires in functional micromechanical devices.zeige mehrzeige weniger

Metadaten exportieren

Weitere Dienste

Teilen auf Twitter Suche bei Google Scholar
Metadaten
Autoren/innen:Nicole Wollschläger, Z. Tasdemir, Ines Häusler, Y. Leblebici, Werner ÖsterleORCiD, B. E. Alaca
Dokumenttyp:Zeitschriftenartikel
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):Journal of Nanomaterials
Jahr der Erstveröffentlichung:2016
Organisationseinheit der BAM:5 Werkstofftechnik
5 Werkstofftechnik / 5.1 Materialographie, Fraktographie und Alterung technischer Werkstoffe
5 Werkstofftechnik / 5.2 Experimentelle und modellbasierte Werkstoffmechanik
Veröffentlichende Institution:Bundesanstalt für Materialforschung und -prüfung (BAM)
Verlag:Hindawi Publishing Corporation
Jahrgang/Band:2016
Erste Seite:Article 4905838, 1
Letzte Seite:6
DDC-Klassifikation:Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten
Freie Schlagwörter:Elastic behavior; Mechanical properties; Scanning electron microscope; Silicon nanowire
Themenfelder/Aktivitätsfelder der BAM:Material
DOI:https://doi.org/10.1155/2016/4905838
URN:urn:nbn:de:kobv:b43-370383
URL:http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=Alerting&SrcApp=Alerting&DestApp=WOS&DestLinkType=FullRecord;UT=WOS:000381457700001
Verfügbarkeit des Volltexts:Volltext-PDF für die Öffentlichkeit verfügbar ("Open Access")
Lizenz (Deutsch):License LogoCreative Commons - Namensnennung-Weitergabe unter gleichen Bedingungen
Datum der Freischaltung:02.08.2016
Referierte Publikation:Ja
Datum der Eintragung als referierte Publikation:12.09.2016
Schriftenreihen ohne Nummerierung:Wissenschaftliche Artikel der BAM