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Simulation of pore shrinkage with crystal plasticity and dislocation transport

  • Single crystal superalloys usually contain pores of sizes 5-10 micro-m after casting and heat treatment. These pores can be reduced under compression by combined creep and diffusion in a subsequent treatment called Hot Isostatic Pressing (HIP). The paper presents a methodology to simulate pore shrinkage under HIP conditions in two dimensions (2D). At the scale of the pores, which is also the scale of the sub-grains (<50 micro-m) the dislocation sources cannot be assumed to be homogeneously distributed. Thus, the applicability of classical crystal plasticity is questionable. In this case, the transport of dislocations under an applied stress from the location where they are nucleated must be explicitly modelled. This is done by solving the transport equations for the dislocation densities and the elasticity equations in 2D. The dislocations are assumed to be nucleated at Low Angle Boundaries. They glide or climb through the sub-grains with a stress dependent velocity. The transportSingle crystal superalloys usually contain pores of sizes 5-10 micro-m after casting and heat treatment. These pores can be reduced under compression by combined creep and diffusion in a subsequent treatment called Hot Isostatic Pressing (HIP). The paper presents a methodology to simulate pore shrinkage under HIP conditions in two dimensions (2D). At the scale of the pores, which is also the scale of the sub-grains (<50 micro-m) the dislocation sources cannot be assumed to be homogeneously distributed. Thus, the applicability of classical crystal plasticity is questionable. In this case, the transport of dislocations under an applied stress from the location where they are nucleated must be explicitly modelled. This is done by solving the transport equations for the dislocation densities and the elasticity equations in 2D. The dislocations are assumed to be nucleated at Low Angle Boundaries. They glide or climb through the sub-grains with a stress dependent velocity. The transport equations are solved by the Flux-Corrected Transport method, which belongs to the predictor-corrector class of algorithms. In the first step, an artificial diffusion is introduced, which suppresses spurious oscillations of the solution. In a second step, the solution is corrected in such a way that no additional extremes appear and that the extremes do not grow. The algorithm is validated by simulating the transport of simple distributions with a constant velocity field. With the dislocation velocities and the computed dislocation densities, the inelastic shear rate at the slip system level is computed by integrating the Orowan equation. In the 2D-setting, three slip systems are considered. The contributions of these slip systems are summed up to obtain the total inelastic strain rate. Dislocation glide and climb and the coupling of climb with vacancies diffusion are considered. The resolution of the equilibrium equations from the inelastic strains turned out to be prone to numerical instabilities. As an alternative, the stresses are directly computed from the distribution of geometrically necessary dislocations following the method presented in. The resulting boundary value problem is solved by the Least-Square Finite Element method. Examples of simulations are presented for a representative region under creep tension and for a pore shrinking under external pressure.zeige mehrzeige weniger

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Metadaten
Autoren/innen:Bernard Fedelich
Koautoren/innen:Titus Feldmann, Amir Charmi, A. Epishin
Dokumenttyp:Vortrag
Veröffentlichungsform:Präsentation
Sprache:Englisch
Jahr der Erstveröffentlichung:2019
Organisationseinheit der BAM:5 Werkstofftechnik
5 Werkstofftechnik / 5.2 Experimentelle und modellbasierte Werkstoffmechanik
DDC-Klassifikation:Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten
Freie Schlagwörter:Creep; Dislocations; Pores; Superalloy
Themenfelder/Aktivitätsfelder der BAM:Material
Material / Degradation von Werkstoffen und Materialien
Veranstaltung:International Conference on Material Modelling, ICMM 6
Veranstaltungsort:Lund, Sweden
Beginndatum der Veranstaltung:26.06.2019
Enddatum der Veranstaltung:28.06.2019
Verfügbarkeit des Volltexts:Volltext-PDF im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:16.07.2019
Referierte Publikation:Nein