Zitieren Sie bitte immer diesen URN: urn:nbn:de:kobv:b43-601220
Optical and tactile measurements on SiC sample defects
- Abstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for theAbstract. In power electronics, compound semiconductors with large bandgaps, like silicon carbide (SiC), are increasingly being used as material instead of silicon. They have a lot of advantages over silicon but are also intolerant of nanoscale material defects, so that a defect inspection with high accuracy is needed. The different defect types on SiC samples are measured with various measurement methods, including optical and tactile methods. The defect types investigated include carrots, particles, polytype inclusions and threading dislocations, and they are analysed with imaging ellipsometry, coherent Fourier scatterometry (CFS), white light interference microscopy (WLIM) and atomic force microscopy (AFM). These different measurement methods are used to investigate which method is most sensitive for which type of defect to be able to use the measurement methods more effectively. It is important to be able to identify the defects to classify them as critical or non-critical for the functionality of the end product. Once these investigations have been completed, the measurement systems can be optimally distributed to the relevant defects in further work to realize a hybrid analysis of the defects. In addition to the identification and classification of defects, such a future hybrid analysis could also include characterizations, e.g. further evaluation of ellipsometric data by using numerical simulations.…
Autor*innen: | Jana GrundmannORCiD, Bernd BodermannORCiD, Elena Ermilova, Matthias Weise, Andreas HertwigORCiD, Petr KlapetekORCiD, Jila Rafighdoost, Silvania F. PereiraORCiD |
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Dokumenttyp: | Zeitschriftenartikel |
Veröffentlichungsform: | Verlagsliteratur |
Sprache: | Englisch |
Titel des übergeordneten Werkes (Englisch): | Journal of Sensors and Sensor Systems |
Jahr der Erstveröffentlichung: | 2024 |
Organisationseinheit der BAM: | 6 Materialchemie |
6 Materialchemie / 6.1 Oberflächen- und Dünnschichtanalyse | |
Veröffentlichende Institution: | Bundesanstalt für Materialforschung und -prüfung (BAM) |
Verlag: | Copernicus GmbH |
Jahrgang/Band: | 13 |
Ausgabe/Heft: | 1 |
Erste Seite: | 109 |
Letzte Seite: | 121 |
DDC-Klassifikation: | Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten |
Freie Schlagwörter: | Compound semiconductors; Hybrid metrology; Material defects; Scanning Probe Microscopy; Spectroscopic Ellipsometry; White-light Interference Microscopy |
Themenfelder/Aktivitätsfelder der BAM: | Material |
Material / Nano | |
DOI: | 10.5194/jsss-13-109-2024 |
URN: | urn:nbn:de:kobv:b43-601220 |
ISSN: | 2194-878X |
Verfügbarkeit des Dokuments: | Datei für die Öffentlichkeit verfügbar ("Open Access") |
Lizenz (Deutsch): | Creative Commons - CC BY - Namensnennung 4.0 International |
Datum der Freischaltung: | 27.05.2024 |
Referierte Publikation: | Nein |
Schriftenreihen ohne Nummerierung: | Wissenschaftliche Artikel der BAM |