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In-situ probing of the dynamics of irreversibly adsorbed layers in PVME thin films

  • For many years now, the so-called three layer model (free-surface, bulk-like, and adsorbed layers) has been commonly used, along with other parameters, to explain the deviations seen in glass transition and glassy dynamics for polymers confined into thin films, compared to their bulk value. Nevertheless, due to the hard accessibility of the adsorbed layers in supported films, little is known about the nature of their dynamics and how they really influences the overall dynamics of the thin films. Here, the irreversibly self-assembled adsorbed layer of a low MW Poly (vinyl methyl ether) (PVME) is solvent-leached from a 200 nm film. The thickness and topography of this layer is checked with Atomic Force Microscopy (AFM), to insure no dewetting and low roughness. Further, the dynamics of the adsorbed layer is then in-situ probed with Broadband Dielectric Spectroscopy (BDS). A recently developed nano-structured capacitor arrangement was employed; where a silicon wafer with nanostructuredFor many years now, the so-called three layer model (free-surface, bulk-like, and adsorbed layers) has been commonly used, along with other parameters, to explain the deviations seen in glass transition and glassy dynamics for polymers confined into thin films, compared to their bulk value. Nevertheless, due to the hard accessibility of the adsorbed layers in supported films, little is known about the nature of their dynamics and how they really influences the overall dynamics of the thin films. Here, the irreversibly self-assembled adsorbed layer of a low MW Poly (vinyl methyl ether) (PVME) is solvent-leached from a 200 nm film. The thickness and topography of this layer is checked with Atomic Force Microscopy (AFM), to insure no dewetting and low roughness. Further, the dynamics of the adsorbed layer is then in-situ probed with Broadband Dielectric Spectroscopy (BDS). A recently developed nano-structured capacitor arrangement was employed; where a silicon wafer with nanostructured SiO2 nano-spacers, with heights of 35 nm, is placed on top of a thin film spin coated on an ultra-flat highly conductive silicon wafer. All results will be discussed in detail and quantitatively compared to our recent work on the glassy dynamics of PVME thin films (50 nm- 7nm), where BDS measurements showed two thickness-independent relaxation processes. The first process was assigned to the -relaxation of a bulk-like layer. Whereas the second process showed a different temperature dependence and was ascribed to the relaxation of polymer segments adsorbed at the substrate. To our knowledge, this is the first in-situ study of the dynamics of an irreversibly adsorbed layer.zeige mehrzeige weniger

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Metadaten
Autor*innen:Sherif Madkour
Koautor*innen:Paulina Szymoniak, Andreas Schönhals
Dokumenttyp:Vortrag
Veröffentlichungsform:Präsentation
Sprache:Englisch
Jahr der Erstveröffentlichung:2017
DDC-Klassifikation:Naturwissenschaften und Mathematik / Chemie / Analytische Chemie
Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten
Freie Schlagwörter:Thin films
Veranstaltung:8th International Discussion Meeting Relaxation in Complex Systems
Veranstaltungsort:Wisla, Poland
Beginndatum der Veranstaltung:23.07.2017
Enddatum der Veranstaltung:28.07.2017
Verfügbarkeit des Dokuments:Datei im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:02.08.2017
Referierte Publikation:Nein
Eingeladener Vortrag:Nein
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