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A complementary study of bonding and electronic structure of amorphous Carbon films by electron spectroscopy and optical techniques

  • A complementary study of composition and bonding of sputtered a-C films, deposited on Si(001) substrates with various bias voltages (Vb) applied to the substrate during deposition is presented. The sp3 and sp2 fractions in the films were calculated by deconvolution of the X-ray photoelectron spectroscopy (XPS) C1s peak and studied by the differential auger electron spectroscopy (AES) CKLL peak signal. The results of this analysis are compared with the estimation of sp3 fraction calculated by spectroscopic ellipsometry (SE) and validated using density measurements by X-ray reflectivity. It was observed a considerable increase of sp3 content in films deposited with negative Vb. The respective sp3 and sp2 fractions and Ar concentration with respect to the Vb and the depth profile analysis give valuable information on the deposition mechanism of the sputtered a-C films. XPS valence band spectra provided the electron density of states in the a-C films’ valence band. The characteristic broadA complementary study of composition and bonding of sputtered a-C films, deposited on Si(001) substrates with various bias voltages (Vb) applied to the substrate during deposition is presented. The sp3 and sp2 fractions in the films were calculated by deconvolution of the X-ray photoelectron spectroscopy (XPS) C1s peak and studied by the differential auger electron spectroscopy (AES) CKLL peak signal. The results of this analysis are compared with the estimation of sp3 fraction calculated by spectroscopic ellipsometry (SE) and validated using density measurements by X-ray reflectivity. It was observed a considerable increase of sp3 content in films deposited with negative Vb. The respective sp3 and sp2 fractions and Ar concentration with respect to the Vb and the depth profile analysis give valuable information on the deposition mechanism of the sputtered a-C films. XPS valence band spectra provided the electron density of states in the a-C films’ valence band. The characteristic broad p band of diamond was prominent in most of the films. The valence band structure of the films was correlated with their optical response measured by SE.zeige mehrzeige weniger

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Metadaten
Autor*innen:Marlene Handrea-Haller, Wolfgang Kautek, P. Patsalas, S. Logothetidis, M. Gioti, S. Kennou
Dokumenttyp:Zeitschriftenartikel
Veröffentlichungsform:Verlagsliteratur
Sprache:Englisch
Titel des übergeordneten Werkes (Englisch):Diamond and related materials
Jahr der Erstveröffentlichung:2001
Verlag:Elsevier
Verlagsort:New York, NY
Jahrgang/Band:10
Ausgabe/Heft:3-7
Erste Seite:960
Letzte Seite:964
Freie Schlagwörter:Band structure; Diamond growth & characterization; Electron Spectroscopy; Spectroscopic Ellipsometry
DOI:10.1016/S0925-9635(00)00480-5
ISSN:0925-9635
Bemerkung:
Geburtsname von Handrea-Haller, Marlene: Handrea, M. -  Birth name of Handrea-Haller, Marlene: Handrea, M.
Verfügbarkeit des Dokuments:Weder Datei noch physisches Exemplar vorhanden ("No Access")
Datum der Freischaltung:19.02.2016
Referierte Publikation:Ja
Datum der Eintragung als referierte Publikation:19.09.2000
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