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Dielectric and thermal relaxation behavior of ultra-thin films of poly(vinyl methyl ether) – evidence of an adsorbed layer

  • Despite the many controversial discussions about the nanometric confinement effect on the properties of ultra-thin films, much remain not understood and/or experimentally unproven. Here, a combination of Broadband Dielectric Spectroscopy (BDS) and Specific Heat Spectroscopy (SHS) employing AC nanochip calorimetry were utilized to investigate the glassy dynamics of ultra-thin films of a low MW Poly (vinyl methyl ether) (PVME) (thicknesses: 7 nm – 160 nm). For BDS measurements, a recently developed nano-structured electrode sample arrangement is employed; where ultra-thin films are spin-coated on an ultra-flat highly conductive silicon wafer, sandwiched between a wafer with nanostructured SiO2 nano-spacers with heights between 35 nm and 70 nm. For films with thicknesses up to 50 nm, BDS measurements showed two relaxation processes, which can be analyzed for these film thicknesses in details. The process located at higher frequencies coincidence in both, its position and temperatureDespite the many controversial discussions about the nanometric confinement effect on the properties of ultra-thin films, much remain not understood and/or experimentally unproven. Here, a combination of Broadband Dielectric Spectroscopy (BDS) and Specific Heat Spectroscopy (SHS) employing AC nanochip calorimetry were utilized to investigate the glassy dynamics of ultra-thin films of a low MW Poly (vinyl methyl ether) (PVME) (thicknesses: 7 nm – 160 nm). For BDS measurements, a recently developed nano-structured electrode sample arrangement is employed; where ultra-thin films are spin-coated on an ultra-flat highly conductive silicon wafer, sandwiched between a wafer with nanostructured SiO2 nano-spacers with heights between 35 nm and 70 nm. For films with thicknesses up to 50 nm, BDS measurements showed two relaxation processes, which can be analyzed for these film thicknesses in details. The process located at higher frequencies coincidence in both, its position and temperature dependence, with the -relaxation of bulk PVME and is therefore assigned to the -relaxation of a bulk-like layer. The temperature dependence of the relaxation rate of this process in independent of film thickness. This is further confirmed by the SHS investigations, which superimpose in its temperature dependence with the BDS results; independent of film thickness. The second process is located at lower frequencies, where it shows a different temperature dependence and ascribed to the relaxation of polymer segments adsorbed at the substrate. The interaction of PVME with SiO2 was further confirmed by contact angle investigations. This adsorbed layer further undergoes a confinement effect that results in a lower Vogel temperature than that of the bulk-like layer. A detailed analysis of the dielectric strengths of both processes reveals that the thickness of the adsorbed layer decreases with increasing temperature, while that of the bulk-like layer increases. As a main conclusion, BDS showed that the glassy dynamics of the bulk-like and the adsorbed layer are thickness independent, which is in agreement with the SHS results. To our knowledge, this is the first probing of the segmental dynamics of an adsorbed layer in ultrathin films.zeige mehrzeige weniger

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Metadaten
Autor*innen:Sherif Madkour
Koautor*innen:Paulina Szymoniak, Andreas Schönhals
Dokumenttyp:Vortrag
Veröffentlichungsform:Präsentation
Sprache:Englisch
Jahr der Erstveröffentlichung:2016
DDC-Klassifikation:Naturwissenschaften und Mathematik / Physik
Technik, Medizin, angewandte Wissenschaften / Ingenieurwissenschaften / Ingenieurwissenschaften und zugeordnete Tätigkeiten
Freie Schlagwörter:Broadband dielectric spectroscopy; Specific heat spectroscopy; Ultra-thin films
Veranstaltung:9th International Conference on Broadband Dielectric Spectroscopy and its Applications
Veranstaltungsort:Pisa, Italy
Beginndatum der Veranstaltung:11.09.2016
Enddatum der Veranstaltung:16.09.2016
Verfügbarkeit des Dokuments:Datei im Netzwerk der BAM verfügbar ("Closed Access")
Datum der Freischaltung:27.09.2016
Referierte Publikation:Nein
Eingeladener Vortrag:Nein
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